Samuel J Carter

US Patent:

20200098424, Mar 26, 2020

Filed:

Nov 15, 2019

Appl. No.:

16/684673

Inventors:

- Arlington VA, US
Thomas L. Reinecke - Alexandria VA, US
Samuel G. Carter - Waldorf MD, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

G11C 11/44
G11C 13/06
G11C 11/16
B81B 3/00
G11C 13/04
G11C 7/22

Abstract:

Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a V monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a V monovacancy defect in silicon carbide.

US Patent:

20200090739, Mar 19, 2020

Filed:

Nov 15, 2019

Appl. No.:

16/684707

Inventors:

- Arlington VA, US
Thomas L. Reinecke - Alexandria VA, US
Samuel G. Carter - Waldorf MD, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

G11C 11/44
G11C 13/06
G11C 11/16
B81B 3/00
G11C 13/04
G11C 7/22

Abstract:

Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a V monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a V monovacancy defect in silicon carbide.

US Patent:

20190369420, Dec 5, 2019

Filed:

May 24, 2019

Appl. No.:

16/421778

Inventors:

- Arlington VA, US
Allan S. Bracker - Alexandria VA, US
Samuel Carter - Waldorf MD, US
Daniel Gammon - Waldorf MD, US

International Classification:

G02F 1/017
C01G 27/02

Abstract:

A technique is described to deterministically tune the emission frequency of individual semiconductor photon sources, for example quantum dots. A focused laser is directed at a film of material that changes form when heated (for example, a phase change material that undergoes change between crystal and amorphous forms) overlaid on a photonic membrane that includes the photon sources. The laser causes a localized change in form in the film, resulting in a change in emission frequency of a photon source.