Samuel J Guthrie

US Patent:

39665151, Jun 29, 1976

Filed:

May 17, 1974

Appl. No.:

5/470803

Inventors:

Samuel Josepheus Guthrie - Portland OR

Assignee:

Teledyne, Inc. - Los Angeles CA

International Classification:

H01L 734

US Classification:

148188

Abstract:

A method of manufacturing field-effect transistors is disclosed which includes the steps of growing an epitaxial layer on a substrate wafer, forming channels of the desired conductivity on the wafer, forming the gate electrodes on the wafer and then forming source and drain electrodes on the wafer. The gate electrodes are formed by first masking the gate electrode area and performing a first boron deposition and boron diffusion step. A second boron deposition and diffusion step is then provided to enable the resultant field-effect transistor to operate at higher voltages.