Sang K Kim

US Patent:

D459673, Jul 2, 2002

Filed:

Aug 3, 2001

Appl. No.:

29/146067

Inventors:

Sang Kim - New York NY 10016

International Classification:

1101

US Classification:

D11 11

US Patent:

8380838, Feb 19, 2013

Filed:

Apr 8, 2011

Appl. No.:

13/082786

Inventors:

Abhijit Bose - Paramus NJ, US
Winnie Wing-Yee Cheng - Tarrytown NY, US
Shang Qing Guo - Cortlandt Manor NY, US
Sang Kyum Kim - Urbana IL, US
Laura Zaihua Luan - Scarsdale NY, US
Daniela Rosu - Ossining NY, US
Mithkal M. Smadi - Round Rock TX, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 15/16

US Classification:

709223, 709224, 714 41, 714 57

Abstract:

Aspects of the present invention dynamically reduce a frequency at which IT infrastructure automatically generates alerts. Historical data across a plurality of data sources in the IT infrastructure is analyzed. An opportunity to reduce the frequency at which the IT infrastructure automatically generates the alerts is identified. A new alert policy addressing the opportunity to reduce alert frequency is generated. An impact of the new alert policy on a set of predefined service level objectives (SLOs) and service level agreements (SLAs) is evaluated. The new alert policy is deployed in the IT infrastructure.

US Patent:

8545342, Oct 1, 2013

Filed:

Feb 15, 2013

Appl. No.:

13/768345

Inventors:

Sang Kim - Allendale NJ, US

Assignee:

Ssam Sports, Inc. - Allendale NJ

International Classification:

A63B 69/36

US Classification:

473280, 473409

Abstract:

Disclosed in certain embodiments is a golf training aid comprising a spheroid segment comprising a dimpled outer circumferential surface, a first substantially flat base surface, and a second substantially flat base surface, wherein the first substantially flat base surface and the second substantially flat base surface are substantially parallel to each other and are substantially equal in size.

US Patent:

D692973, Nov 5, 2013

Filed:

Mar 1, 2013

Appl. No.:

29/447200

Inventors:

Sang Kim - Allendale NJ, US

Assignee:

SSAM Sports, Inc. - Allendale NJ

International Classification:

2102

US Classification:

D21709, D21710

US Patent:

20130132551, May 23, 2013

Filed:

Jan 11, 2013

Appl. No.:

13/739123

Inventors:

International Business Machines Corporation - Armonk NY, US
Winnie W. Cheng - Tarrytown NY, US
Shang Q. Guo - Cortland Manor NY, US
Sang K. Kim - Urbana IL, US
Laura Z. Luan - Scarsdale NY, US
Daniela Rosu - Ossining NY, US
Mithkal M. Smadi - Round Rock TX, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H04L 12/24

US Classification:

709223

Abstract:

Aspects of the present invention dynamically reduce a frequency at which IT infrastructure automatically generates alerts. Historical data across a plurality of data sources in the IT infrastructure is analyzed. An opportunity to reduce the frequency at which the IT infrastructure automatically generates the alerts is identified. A new alert policy addressing the opportunity to reduce alert frequency is generated. An impact of the new alert policy on a set of predefined service level objectives (SLOs) and service level agreements (SLAs) is evaluated. The new alert policy is deployed in the IT infrastructure.

US Patent:

20130210538, Aug 15, 2013

Filed:

Dec 21, 2012

Appl. No.:

13/724333

Inventors:

Sang Kim - Allendale NJ, US
David Stowers - Whippany NJ, US

International Classification:

A63B 69/36

US Classification:

473280, 2643281, 425542

Abstract:

Disclosed in certain embodiments is a golf training aid comprising a spheroid segment comprising a dimpled outer circumferential surface, a first base surface, and a second base surface.

US Patent:

48599387, Aug 22, 1989

Filed:

Jul 27, 1987

Appl. No.:

7/078094

Inventors:

Sang U. Kim - Tempe AZ
Mohammad K. Khan - Iselin NJ

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

G01R 2726
G01R 3100

US Classification:

324158D

Abstract:

A novel technique to detect oxydonor generation in semiconductor wafers. Oxydonor generation in a P-type substrate may be sufficient to create a P-N junction within the substrate which may adversely affect device performance. A technique of the present invention is a two-step process for determining the presence of such an oxydonor generated P-N junction. For a capacitor device, the capacitance of the device is measured under varying test voltages to determine a capacitance-voltage response. Then a second capacitance-voltage response is measured when the device is subjected to an external energy source. For a diode device, the forward current is measured with the device under varying test voltages to determine a current-voltage response. Then a second currrent-voltage response is measured when the device is subjected to an external energy source. By comparing device response with and without the application of external energy, a device having oxydonor generation problems is efficiently detected.

US Patent:

48354589, May 30, 1989

Filed:

Nov 9, 1987

Appl. No.:

7/118256

Inventors:

Sang U. Kim - Tempe AZ

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

G01R 1512
G11C 1140
G06F 1126

US Classification:

324 73R

Abstract:

An error testing process for the testing of CMOS static RAM memories. Individual static RAM memory cells that have failed are isolated. A typical cell has six transistors, two access, two n-channel and two p-channel. The access transistors are allowed to float which effectively isolates the cell. By application of voltages to the n-channel or p-channel transistors one set can be turned off and the remaining two n-channel or p-channel transistors can be tested with microprobes varying voltages for the forward and reverse bias testing. The graphs of the current flow from these tests are compared using the signature analysis technique so that not only the exact transistor which failed can be identified but the failure mechanism can also be identified. This process permits error testing without damage to the RAM memory and without physical isolation of the SRAM memory.