Sarah L Lane

US Patent:

6737747, May 18, 2004

Filed:

Jan 15, 2002

Appl. No.:

10/047965

Inventors:

Edward Barth - Ridgefield CT
John A. Fitzsimmons - Poughkeepsie NY
Stephen M. Gates - Ossining NY
Thomas H. Ivers - Hopewell Junction NY
Sarah L. Lane - Wappingers Falls NY
Jia Lee - Ossining NY
Ann McDonald - New Windsor NY
Vincent McGahay - Poughkeepsie NY
Darryl D. Restaino - Modena NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2348

US Classification:

257760, 257637, 257640, 257642, 257759, 257762

Abstract:

An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.

US Patent:

6939797, Sep 6, 2005

Filed:

Nov 12, 2003

Appl. No.:

10/706773

Inventors:

Edward Barth - Ridgefield CT, US
John A. Fitzsimmons - Poughkeepsie NY, US
Stephen M. Gates - Ossining NY, US
Thomas H. Ivers - Hopewell Junction NY, US
Sarah L. Lane - Wappingers Falls NY, US
Jia Lee - Ossining NY, US
Ann McDonald - New Windsor NY, US
Vincent McGahay - Poughkeepsie NY, US
Darryl D. Restaino - Modena NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L021/4763
H01L021/44
H01L021/461

US Classification:

438628, 438627, 438653, 438654, 438687, 438724, 438744, 438791

Abstract:

An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.

US Patent:

7585722, Sep 8, 2009

Filed:

Jan 10, 2006

Appl. No.:

11/306746

Inventors:

Daniel C. Edelstein - White Plains NY, US
Anil K. Chinthakindi - Wappingers Falls NY, US
Timothy J. Dalton - Ridgefield CT, US
Ebenezer E. Eshun - Newburgh NY, US
Jeffrey P. Gambino - Westford VT, US
Sarah L. Lane - Wappingers Falls NY, US
Anthony K. Stamper - Williston VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/00

US Classification:

438239, 438393

Abstract:

The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at the same pitches. The invention achieves a capacitor that minimizes capacitance tolerance and preserves symmetry in parasitic electrode-substrate capacitive coupling, without adversely affecting other interconnects and via contacts formed in the same wiring level, through the use of, at most, one additional noncritical, photomask.

US Patent:

8120143, Feb 21, 2012

Filed:

Feb 21, 2008

Appl. No.:

12/034728

Inventors:

Daniel C. Edelstein - White Plains NY, US
Anil K. Chinthakindi - Wappingers Falls NY, US
Timothy J. Dalton - Ridgefield CT, US
Ebenezer E. Eshun - Newburgh NY, US
Jeffrey P. Gambino - Westford VT, US
Sarah L. Lane - Wappingers Falls NY, US
Anthony K. Stamper - Williston VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/00

US Classification:

257532, 257301

Abstract:

The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at the same pitches. The invention achieves a capacitor that minimizes capacitance tolerance and preserves symmetry in parasitic electrode-substrate capacitive coupling, without adversely affecting other interconnects and via contacts formed in the same wiring level, through the use of, at most, one additional noncritical, photomask.