Sarah Ann Lane

US Patent:

7202564, Apr 10, 2007

Filed:

Feb 16, 2005

Appl. No.:

10/906370

Inventors:

Son Nguyen - Yorktown Heights NY, US
Sarah L. Lane - Wappingers Falls NY, US
Jia Lee - Fremont CA, US
Kensaku Ida - Wappingers Falls NY, US
Darryl D. Restaino - Modena NY, US
Takeshi Nogami - Hartsdale NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 23/48

US Classification:

257758, 257759, 257760

Abstract:

A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3. 0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH+CHstretching of less than about 1. 40, a peak area for SiH stretching of less than about 0. 20, a peak area for SiCHbonding of greater than about 2. 0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.

US Patent:

7265437, Sep 4, 2007

Filed:

Mar 8, 2005

Appl. No.:

10/906815

Inventors:

Son V. Nguyen - Yorktown Heights NY, US
Sarah L. Lane - Wappingers Falls NY, US
Eric G. Liniger - Sandy Hook CT, US
Kensaku Ida - Wappingers Falls NY, US
Darryl D. Restaino - Modena NY, US

Assignee:

International Business Machines Corporation - Armonk NY
Sony Corporation - Tokyo

International Classification:

H01L 21/58

US Classification:

257637, 257760, 257E23164, 257E23019

Abstract:

A low k dielectric stack having an effective dielectric constant k, of about 3. 0 or less, in which the mechanical properties of the stack are improved by introducing at least one nanolayer into the dielectric stack. The improvement in mechanical properties is achieved without significantly increasing the dielectric constant of the films within the stack and without the need of subjecting the inventive dielectric stack to any post treatment steps. Specifically, the present invention provides a low k dielectric stack that comprises at least one low k dielectric material and at least one nanolayer present within the at least one low k dielectric material.

US Patent:

7494938, Feb 24, 2009

Filed:

Feb 5, 2007

Appl. No.:

11/671022

Inventors:

Son V. Nguyen - Yorktown Heights NY, US
Sarah L. Lane - Wappingers Falls NY, US
Jia Lee - Fremont CA, US
Kensaku Ida - Wappingers Falls NY, US
Darryl D. Restaino - Modena NY, US
Takeshi Nogami - Hartsdale NY, US

Assignee:

International Business Machines Corporation - Armonk NY
Sony Corporation - Tokyo
Sony Electronics Inc. - Park Ridge NJ

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438780, 438781, 438788

Abstract:

A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3. 0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH+CHstretching of less than about 1. 40, a peak area for SiH stretching of less than about 0. 20, a peak area for SiCHbonding of greater than about 2. 0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.

US Patent:

7585722, Sep 8, 2009

Filed:

Jan 10, 2006

Appl. No.:

11/306746

Inventors:

Daniel C. Edelstein - White Plains NY, US
Anil K. Chinthakindi - Wappingers Falls NY, US
Timothy J. Dalton - Ridgefield CT, US
Ebenezer E. Eshun - Newburgh NY, US
Jeffrey P. Gambino - Westford VT, US
Sarah L. Lane - Wappingers Falls NY, US
Anthony K. Stamper - Williston VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/00

US Classification:

438239, 438393

Abstract:

The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at the same pitches. The invention achieves a capacitor that minimizes capacitance tolerance and preserves symmetry in parasitic electrode-substrate capacitive coupling, without adversely affecting other interconnects and via contacts formed in the same wiring level, through the use of, at most, one additional noncritical, photomask.

US Patent:

7998880, Aug 16, 2011

Filed:

Jul 30, 2007

Appl. No.:

11/830425

Inventors:

Son V. Nguyen - Yorktown Heights NY, US
Sarah L. Lane - Wappingers Falls NY, US
Eric G. Liniger - Sandy Hook CT, US
Kensaku Ida - Wappingers Falls NY, US
Darryl D. Restaino - Modena NY, US

Assignee:

International Business Machines Corporation - Armonk NY
Sony Corporation - Tokyo

International Classification:

H01L 21/76

US Classification:

438778, 438787, 438624, 257E21581

Abstract:

A low k dielectric stack having an effective dielectric constant k, of about 3. 0 or less, in which the mechanical properties of the stack are improved by introducing at least one nanolayer into the dielectric stack. The improvement in mechanical properties is achieved without significantly increasing the dielectric constant of the films within the stack and without the need of subjecting the inventive dielectric stack to any post treatment steps. Specifically, the present invention provides a low k dielectric stack that comprises at least one low k dielectric material and at least one nanolayer present within the at least one low k dielectric material.

US Patent:

8120143, Feb 21, 2012

Filed:

Feb 21, 2008

Appl. No.:

12/034728

Inventors:

Daniel C. Edelstein - White Plains NY, US
Anil K. Chinthakindi - Wappingers Falls NY, US
Timothy J. Dalton - Ridgefield CT, US
Ebenezer E. Eshun - Newburgh NY, US
Jeffrey P. Gambino - Westford VT, US
Sarah L. Lane - Wappingers Falls NY, US
Anthony K. Stamper - Williston VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/00

US Classification:

257532, 257301

Abstract:

The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at the same pitches. The invention achieves a capacitor that minimizes capacitance tolerance and preserves symmetry in parasitic electrode-substrate capacitive coupling, without adversely affecting other interconnects and via contacts formed in the same wiring level, through the use of, at most, one additional noncritical, photomask.