Scott R Hanson

US Patent:

20120030268, Feb 2, 2012

Filed:

Jun 2, 2011

Appl. No.:

13/067470

Inventors:

Nurrachman Chih Yeh Liu - San Diego CA, US
Scott M. Hanson - Austin TX, US
Nathaniel Pinckney - Ann Arbor MI, US
David T. Blaauw - Ann Arbor MI, US
Dennis M. Sylvester - Ann Arbor MI, US

Assignee:

University of Michigan - Ann Arbor MI

International Classification:

G06F 7/58

US Classification:

708254

Abstract:

A data processing apparatus is provided for producing a randomized value. A cell in the data processing apparatus comprises a dielectric oxide layer and stress voltage circuitry is configured to apply a stress voltage across the dielectric oxide layer of the cell to cause an oxide breakdown process to occur. Oxide breakdown detection circuitry is configured to determine a current extent of the oxide breakdown process by measuring a response of the dielectric oxide layer to the stress voltage and randomized value determination circuitry is configured to determine a randomized value in dependence on the current extent of the oxide breakdown process.