Scott A Lane

US Patent:

7670964, Mar 2, 2010

Filed:

Mar 22, 2007

Appl. No.:

11/689572

Inventors:

Scott Lane - Gilbert AZ, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01L 21/31

US Classification:

438788

Abstract:

Embodiments of a gas cluster ion beam apparatus and methods for forming a gas cluster ion beam using a low-pressure process source are generally described herein. In one embodiment, the low-pressure process source is mixed with a high-pressure diluent source in a static pump to form a mixed source, from which a gas cluster jet is generated and ionized to form the gas cluster ion beam. Other embodiments may be described and claimed.

US Patent:

58462759, Dec 8, 1998

Filed:

Dec 31, 1996

Appl. No.:

8/778386

Inventors:

Scott Lane - Chandler AZ
Mark Holst - Concord CA

Assignee:

ATMI EcoSys Corporation - San Jose CA

International Classification:

B01D 3500
B01D 5100
B65G 5318

US Classification:

55431

Abstract:

A clog-resistant inlet structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system, including: a gas-permeable wall enclosing a gas flow path, and an outer annular jacket circumscribing the gas-permeable wall to define an annular gas reservoir therebetween; and a flow passage for introducing a gas into the annular gas reservoir during the flow of the particulate solids-containing and/or solids-forming gas stream to a gas processing system through such inlet structure at a pressure sufficient to cause the gas to permeate through the gas-permeable wall to combat the deposition or formation of solids on the interior surface of the gas-permeable wall. The inlet structure may further optionally include a downstream annular section in which the wall surface bounding the gas stream is blanketed with a falling liquid film, to combat solids deposition or formation on the blanketed wall surface.