Scott D Mcclurg

age ~70

from Rochester, NY

Get Report

Connected to:

Scott Mcclurg Phones & Addresses

17 Pinewood Knl, Rochester, NY 14624 • 5852477087
Westgate, NY

Work

Position:

Administrative Support Occupations, Including Clerical Occupations

Education

Degree:

Bachelor's degree or higher

Resumes

Technician At Eastman Kodak

view source

Location:

Rochester, NY

Industry:

Printing

Work:

Eastman Kodak
Technician at Eastman Kodak

Mechanical Systems Technician

view source

Location:

Rochester, NY

Industry:

Research

Work:

Oledworks Llc
Mechanical Systems Technician
Eastman Kodak Apr 1988 - Dec 2011
Process Development Technician
Eastman Kodak Mar 1980 - Apr 1988
Toolmaker and Machine Builder
Alliance Tool & Die Jul 1973 - Mar 1980
Toolmaker

Skills:

Process Simulation
Design of Experiments
Mechanical Engineering
Metal Fabrication
R&D
Product Development
Manufacturing
Thin Films
Research and Development
Lean Manufacturing
Product Design
Failure Analysis
Optics
Engineering

Us Patents

Method For Separation Of Diode Array Chips During Fabrication Thereof
view source
US Patent:

49977920, Mar 5, 1991
Filed:

Nov 21, 1989
Appl. No.:

7/439919
Inventors:

Scott D. McClurg - Rochester NY
Assignee:

Eastman Kodak Company - Rochester NY
International Classification:

H01L 21302
US Classification:

437226
Abstract:

Rather than being separated along a single cleavage line between their adjacent ends, diode arrays are spaced apart on a fabrication wafer to allow parallel cleavage lines to be established between the ends of each adjacent pair of arrays by scribed grooves located along opposite sides of a narrow disposable strip of water material. A cleaving technique substantially insures that any projecting lip along the cleavage plane will be on the disposable strip rather than on a diode chip, so that such a defect cannot interfere with proper end-to-end spacing of the chips when they are subsequently assembled to provide a continuous row of chips with uniformly spaced individual light-emitting sites.

Method Of Improving Cleaving Of Diode Arrays
view source
US Patent:

49977938, Mar 5, 1991
Filed:

Nov 21, 1989
Appl. No.:

7/439920
Inventors:

Scott D. McClurg - Rochester NY
Assignee:

Eastman Kodak Company - Rochester NY
International Classification:

H01L 21302
H01L 21304
US Classification:

437226
Abstract:

A relatively wide scribing channel is provided between the ends of each adjacent pair of diode array areas on a wafer to expose the epitaxial layer of the wafer. A scribing groove is then scribed in the scribing channel to define a cleavage line along which the array areas are separated.

Separation Of Diode Array Chips During Fabrication Thereof
view source
US Patent:

53008065, Apr 5, 1994
Filed:

Mar 1, 1991
Appl. No.:

7/662865
Inventors:

Scott D. McClurg - Rochester NY
Assignee:

Eastman Kodak Company - Rochester NY
International Classification:

H01L 3300
H01L 2906
H01L 2710
US Classification:

257594
Abstract:

Rather than being separated along a single cleavage line between their adjacent ends, diode arrays are spaced apart on a fabrication wafer to allow parallel cleavage lines to be established between the ends of each adjacent pair of arrays by scribed grooves located along opposite sides of a narrow disposable strip of wafer material. A cleaving technique substantially insures that any projecting lip along the cleavage plane will be on the disposable strip rather than on a diode chip, so that such a defect cannot interfere with proper end-to-end spacing of the chips when they are subsequently assembled to provide a continuous row of chips with uniformly spaced individual light-emitting sites.

Cleaving Of Diode Arrays With Scribing Channels
view source
US Patent:

50538365, Oct 1, 1991
Filed:

Mar 1, 1991
Appl. No.:

7/662866
Inventors:

Scott D. McClurg - Rochester NY
Assignee:

Eastman Kodak Company - Rochester NY
International Classification:

H01L 3300
US Classification:

357 17
Abstract:

A relatively wide scribing channel is provided between the ends of each adjacent pair of diode array areas on a wafer to expose the epitaxial layer of the wafer. A scribing groove is then scribed in the scribing channel to define a cleavage line along which the array areas are separated.