Scott A Wheelock

US Patent:

51087200, Apr 28, 1992

Filed:

May 20, 1991

Appl. No.:

7/702541

Inventors:

Michael Bourbina - Midland MI
James R. McCormick - Midland MI
Scott A. Wheelock - Bay City MI

Assignee:

Hemlock Semiconductor Corporation - Hemlock MI

International Classification:

B01D 900

US Classification:

422253

Abstract:

The present invention is a float-zone process for forming particulate silicon into monocrystalline silicon. The process employs a reusable silicon conduit having a lower end heated to form a melt zone and an upper end provided with a means for delivering a controlled amount of particulate silicon to the melt zone. A monocrystal silicon seed is used to pull a monocrystalline silicon ingot from the melt zone and particulate silicon is added to the melt zone to replenish silicon removed as monocrystalline silicon.

US Patent:

53611284, Nov 1, 1994

Filed:

Sep 10, 1992

Appl. No.:

7/942907

Inventors:

Michael Bourbina - Midland MI
Lydia L. Hwang - Midland MI
Joaquin E. Luna - Saginaw MI
Scott A. Wheelock - Freeland MI

Assignee:

Hemlock Semiconductor Corporation - Hemlock MI

International Classification:

G01N 100

US Classification:

356 36

Abstract:

The present invention is a method for analyzing irregular-shaped chunked silicon for low-level contaminates. The method comprises selecting a zonable-chunk of silicon and float-zoning the chunk of silicon to effect a distribution of surface contaminates into the bulk of a monocrystal of silicon. The float-zoned monocrystalline silicon is then processed into a wafer suitable for analysis for low-level contaminates.

US Patent:

62511823, Jun 26, 2001

Filed:

May 11, 1993

Appl. No.:

8/060767

Inventors:

Joaquin Enrique Luna - Saginaw MI
Scott Allen Wheelock - Freeland MI

Assignee:

Hemlock Semiconductor Corporation - Hemlock MI

International Classification:

C30B 1316

US Classification:

117 49

Abstract:

The present invention is an improved susceptor for a float-zone apparatus for the float-zone processing of silicon elements. The susceptor is of a cylindrical design which allows the susceptor to be positioned around a free end of a silicon element to heat the free end of the silicon element to facilitate inductive coupling of the free end of the silicon element with an RF induction coil heater. In a preferred embodiment of the present invention, the susceptor is formed from tantalum.