Scott A Yoder

US Patent:

8559898, Oct 15, 2013

Filed:

Nov 2, 2011

Appl. No.:

13/287735

Inventors:

David E. Jones - Cedar Rapids IA, US
Chris Levesque - Fountain Valley CA, US
William David Southcombe - San Diego CA, US
Scott Yoder - Fuquay Varina NC, US
Terry J. Stockert - Cedar Rapids IA, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01Q 11/12
H04B 1/04

US Classification:

4551271, 4551273, 330272, 330289, 330200

Abstract:

A radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage and an RF PA temperature compensating bias transistor of the RF PA stage are disclosed. The RF PA amplifying transistor includes a first array of amplifying transistor elements and a second array of amplifying transistor elements. The RF PA temperature compensating bias transistor provides temperature compensation of bias of the RF PA amplifying transistor. Further, the RF PA temperature compensating bias transistor is located between the first array and the second array. As such, the RF PA temperature compensating bias transistor is thermally coupled to the first array and the second array. The RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor.

US Patent:

8565694, Oct 22, 2013

Filed:

Nov 4, 2011

Appl. No.:

13/289379

Inventors:

David E. Jones - Cedar Rapids IA, US
Chris Levesque - Fountain Valley CA, US
William David Southcombe - San Diego CA, US
Scott Yoder - Fuquay Varina NC, US
Terry J. Stockert - Cedar Rapids IA, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01Q 11/12
H04B 1/04

US Classification:

455 91, 4551271, 4551274

Abstract:

A split current current digital-to-analog converter (IDAC) and a radio frequency (RF) power amplifier (PA) stage are disclosed. The split current IDAC operates in a selected one of a group of DDS operating modes and provides a group of array bias signals based on the selected one of the group of DDS operating modes. Each of the group of array bias signals is a current signal. The RF PA stage includes a group of arrays of amplifying transistor elements. The RF PA stage biases at least one of the group of arrays of amplifying transistor elements based on the group of array bias signals. Further, the RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using at least one of the group of arrays of amplifying transistor elements that is biased.

US Patent:

20120044022, Feb 23, 2012

Filed:

Nov 3, 2011

Appl. No.:

13/288273

Inventors:

Gregg A. Walker - Robins IA, US
David E. Jones - Cedar Rapids IA, US
Chris Levesque - Fountain Valley CA, US
William David Southcombe - San Diego CA, US
Scott Yoder - Fuquay Varina NC, US
Terry J. Stockert - Cedar Rapids IA, US

Assignee:

RF MICRO DEVICES, INC. - Greensboro NC

International Classification:

H03F 3/68
H03F 3/04

US Classification:

330296

Abstract:

An in-phase radio frequency (RF) power amplifier (PA) stage and a quadrature-phase RF PA stage are disclosed. The in-phase RF PA stage includes a first group of arrays of amplifying transistor elements and the quadrature-phase RF PA stage includes a second group of arrays of amplifying transistor elements. A group of array bias signals is based on a selected one of a group of DDS operating modes. Each of the group of array bias signals is a current signal. The in-phase RF PA stage biases at least one of the first group of arrays of amplifying transistor elements based on the group of array bias signals. Similarly, the quadrature-phase RF PA stage biases at least one of the second group of arrays of amplifying transistor elements based on the group of array bias signals.

US Patent:

20120044606, Feb 23, 2012

Filed:

Nov 3, 2011

Appl. No.:

13/288373

Inventors:

David E. Jones - Cedar Rapids IA, US
William David Southcombe - San Diego CA, US
Chris Levesque - Fountain Valley CA, US
Scott Yoder - Fuquay Varina NC, US
Terry J. Stockert - Cedar Rapids IA, US

Assignee:

RF MICRO DEVICES, INC. - Greensboro NC

International Classification:

H02H 9/04
H03F 3/68

US Classification:

361 56, 330124 R

Abstract:

A power amplifier (PA) controller semiconductor die and a first radio frequency (RF) PA semiconductor die are disclosed. The PA controller semiconductor die includes a first electro-static discharge (ESD) protection circuit, which ESD protects and provides a first ESD protected signal. The RF PA semiconductor die receives the first ESD protected signal. In one embodiment of the PA controller semiconductor die, the first ESD protected signal is an envelope power supply signal. The PA controller semiconductor die may be a Silicon complementary metal-oxide-semiconductor (CMOS) semiconductor die and the RF PA semiconductor die may be a Gallium Arsenide semiconductor die.

US Patent:

20120223773, Sep 6, 2012

Filed:

Sep 7, 2011

Appl. No.:

13/226777

Inventors:

David E. Jones - Cedar Rapids IA, US
William David Southcombe - San Diego CA, US
Chris Levesque - Fountain Valley CA, US
Scott Yoder - Fuquay Varina NC, US
Terry J. Stockert - Cedar Rapids IA, US

Assignee:

RF MICRO DEVICES, INC. - Greensboro NC

International Classification:

H03F 3/68

US Classification:

330124 R

Abstract:

Embodiments of the present disclosure relate to multi-mode multi-band radio frequency (RF) power amplifier (PA) circuitry, which includes a multi-mode multi-band quadrature RF PA coupled to multi-mode multi-band switching circuitry via a single output. The switching circuitry provides at least one non-linear mode output and multiple linear mode outputs. The non-linear mode output may be associated with at least one non-linear mode RF communications band and each linear mode output may be associated with a corresponding linear mode RF communications band. The outputs from the switching circuitry may be coupled to an antenna port via front-end aggregation circuitry. The quadrature nature of the quadrature PA path may provide tolerance for changes in antenna loading conditions.

US Patent:

20120229210, Sep 13, 2012

Filed:

Sep 7, 2011

Appl. No.:

13/226843

Inventors:

David E. Jones - Cedar Rapids IA, US
Terry J. Stockert - Cedar Rapids IA, US
William David Southcombe - San Diego CA, US
Chris Levesque - Fountain Valley CA, US
Scott Yoder - Fuquay Varina NC, US

Assignee:

RF MICRO DEVICES, INC. - Greensboro NC

International Classification:

H03F 3/04

US Classification:

330250

Abstract:

Embodiments of the present disclosure relate to an overlay class F choke of a radio frequency (RF) power amplifier (PA) stage and an RF PA amplifying transistor of the RF PA stage. The overlay class F choke includes a pair of mutually coupled class F inductive elements, which are coupled in series between a PA envelope power supply and a collector of the RF PA amplifying transistor. In one embodiment of the RF PA stage, the RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor. The collector of the RF PA amplifying transistor provides the RF stage output signal. The PA envelope power supply provides an envelope power supply signal to the overlay class F choke. The envelope power supply signal provides power for amplification.

US Patent:

20120302186, Nov 29, 2012

Filed:

Nov 28, 2011

Appl. No.:

13/304744

Inventors:

David E. Jones - Cedar Rapids IA, US
William David Southcombe - San Diego CA, US
Brian Baxter - Greensboro NC, US
Roman Zbigniew Arkiszewski - Oak Ridge NC, US
Chris Levesque - Fountain Valley CA, US
Scott Yoder - Fuquay Varina NC, US
Terry J. Stockert - Cedar Rapids IA, US

Assignee:

RF MICRO DEVICES, INC. - Greensboro NC

International Classification:

H04B 1/04

US Classification:

4551271

Abstract:

A radio frequency (RF) communications system, which includes power amplifier (PA) control circuitry and PA bias circuitry, is disclosed. The PA control circuitry identifies a selected communications mode of the RF communications system and a target output power from RF PA circuitry. The PA control circuitry selects a PA bias level of a driver stage of the RF PA circuitry and a PA bias level of a final stage of the RF PA circuitry based on the selected communications mode and the target output power. The PA bias circuitry establishes a PA bias level for the driver stage and a PA bias level for the final stage based on the selected PA bias levels of the driver stage and the final stage, respectively.

US Patent:

20130271224, Oct 17, 2013

Filed:

Jun 6, 2013

Appl. No.:

13/911428

Inventors:

David E. Jones - Cedar Rapids IA, US
Paul D. Jones - Center Point IA, US
Chris Levesque - Fountain Valley CA, US
William David Southcombe - San Diego CA, US
Scott Yoder - Fuquay Varina NC, US
Terry J. Stockert - Cedar Rapids IA, US

International Classification:

H03F 3/19

US Classification:

330296

Abstract:

A radio frequency (RF) switch semiconductor die and an RF supporting structure are disclosed. The RF switch semiconductor die is attached to the RF supporting structure. The RF switch semiconductor die has a first edge and a second edge, which may be opposite from the first edge. The RF supporting structure has a group of alpha supporting structure connection nodes, which is adjacent to the first edge; a group of beta supporting structure connection nodes, which is adjacent to the second edge; and an alpha AC grounding supporting structure connection node, which is adjacent to the second edge. When the group of alpha supporting structure connection nodes and the alpha AC grounding supporting structure connection node are active, the group of beta supporting structure connection nodes are inactive.