Sean Z Lin

US Patent:

20140353805, Dec 4, 2014

Filed:

May 28, 2013

Appl. No.:

13/903618

Inventors:

- Grand Cayman, KY
Moosung M. CHAE - Englewood Cliffs NJ, US
Larry ZHAO - Niskayuna NY, US
Kunaljeet TANWAR - Slingerlands NY, US
Nicholas Vincent LICAUSI - Watervliet NY, US
Christian WITT - Woodbridge CT, US
Ailian ZHAO - Slingerlands NY, US
Ming HE - Slingerlands NY, US
Sean X. LIN - Watervliet NY, US
Xunyuan ZHANG - Albany NY, US

Assignee:

GLOBALFOUNDRIES Inc. - Grand Cayman

International Classification:

H01L 21/3105
H01L 23/00

US Classification:

257632, 438476

Abstract:

A process is provided for the removal of contaminants from a semiconductor device, for example, removing contaminants from pores of an ultra-low k film. In one aspect, a method includes: providing a dielectric layer with contaminant-containing pores and exposing the dielectric layer to a supercritical fluid. The supercritical fluid can dissolve and remove the contaminants. In another aspect, an intermediate semiconductor device structure is provided that contains a dielectric layer with contaminant-containing pores and a supercritical fluid within the pores. In another aspect, a semiconductor device structure with a dielectric layer containing uncontaminated pores is provided.