Sergio Palma Pacheco

US Patent:

7276420, Oct 2, 2007

Filed:

Jul 11, 2005

Appl. No.:

11/179685

Inventors:

Lianjun Liu - Gilbert AZ, US
Qiang Li - Gilbert AZ, US
Melvy F. Miller - Tempe AZ, US
Sergio P. Pacheco - Phoenix AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 21/338
H01L 21/337
H01L 21/8222
H01L 21/20

US Classification:

438329, 438171, 438190, 438210, 438393

Abstract:

An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.

US Patent:

7439606, Oct 21, 2008

Filed:

Jul 30, 2007

Appl. No.:

11/830577

Inventors:

Lianjun Liu - Gilbert AZ, US
Qiang Li - Gilbert AZ, US
Melvy F. Miller - Tempe AZ, US
Sergio P. Pacheco - Phoenix AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 29/00

US Classification:

257528, 257531, 257532

Abstract:

An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.

US Patent:

8445978, May 21, 2013

Filed:

Nov 25, 2009

Appl. No.:

13/128035

Inventors:

Francois Perruchot - Grenoble, FR
Emmanuel Defay - Voreppe, FR
Patrice Rey - Saint Jean Moirans, FR
Lianjun Liu - Chandler AZ, US
Sergio Pacheco - Scottsdale AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX
Commissariat à l'Energie Atomique et aux Energies Alternatives (CEA) - Paris

International Classification:

G01P 15/08

US Classification:

257417, 257415, 257419, 438 21, 438 52, 438739, 438745

Abstract:

A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.

US Patent:

8513042, Aug 20, 2013

Filed:

Jun 15, 2010

Appl. No.:

13/320579

Inventors:

Francois Perruchot - Grenoble, FR
Lianjun Liu - Chandler AZ, US
Sergio Pacheco - Scottsdale AZ, US
Emmanuel Defay - Voreppe, FR
Patrice Rey - Saint Jean de Moirans, FR

Assignee:

Freescale Semiconductor, Inc. - Austin TX
Commissariat à l'Energie Atomique et aux Energies Alternatives (CEA) - Paris

International Classification:

H01L 21/00

US Classification:

438 52, 438 17, 438 50, 438 54, 257415, 257417, 257467

Abstract:

A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

US Patent:

20050046518, Mar 3, 2005

Filed:

Aug 28, 2003

Appl. No.:

10/652406

Inventors:

Peter Zurcher - Phoenix AZ, US
Rashaunda Henderson - Chandler AZ, US
Sergio Pacheco - Chandler AZ, US

International Classification:

H03H009/15

US Classification:

333186000, 438050000

Abstract:

An electromechanical resonator includes a substrate (), an anchor () coupled to the substrate, a beam () coupled to the anchor and suspended over the substrate, and a drive electrode () coupled to the substrate and separated from the beam by a gap (). The beam has a first surface (), a second surface (), and a third surface (). The first surface defines a width and a height, the second surface defines the height and a length, and the third surface defines the length and the width. The width, height, and length are substantially mutually perpendicular, and the beam resonates substantially only in compression mode and substantially only along an axis defined by the length.

US Patent:

20110221307, Sep 15, 2011

Filed:

Nov 25, 2009

Appl. No.:

13/128032

Inventors:

Lianjun Liu - Chandler AZ, US
Sergio Pacheco - Scottsdale AZ, US
Francois Perruchot - Grenoble, FR
Emmanuel Defay - Voreppe, FR
Patrice Rey - Saint Jean De Moirans, FR

Assignee:

Freescale Semiconductors, Inc. - Austin TX
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES - Paris

International Classification:

H01L 41/04

US Classification:

310325

Abstract:

A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.

US Patent:

20150194388, Jul 9, 2015

Filed:

Jan 7, 2014

Appl. No.:

14/149335

Inventors:

EDUARD J. PABST - MESA AZ, US
SERGIO P. PACHECO - SCOTTSDALE AZ, US
WENG F. YAP - CHANDLER AZ, US

International Classification:

H01L 23/552
H01L 21/768
H01L 23/66
H01L 23/522

Abstract:

Shielded device packages and related fabrication methods are provided. An exemplary device package includes one or more electrical components, a molding compound overlying the one or more electrical components, a conductive interconnect structure within the molding compound, a conductive frame structure laterally surrounding the one or more electrical components and the interconnect structure, and a shielding structure overlying the one or more electrical components. The shielding structure is electrically connected to the frame structure and at least a portion of the molding compound resides between the shielding structure and the one or more electrical components.