Shelby R Nelson

US Patent:

6805433, Oct 19, 2004

Filed:

May 19, 2003

Appl. No.:

10/440177

Inventors:

Alan D Raisanen - Sodus NY
Shelby F Nelson - Pittsford NY

Assignee:

Xerox Corporation - Stamford CT

International Classification:

B41J 205

US Classification:

347 65

Abstract:

A method of manufacturing a fluid ejection device having circular nozzles includes forming channels in a substrate, depositing a sacrificial material, such as photoresist, into channels to form a mold for the fluid channels and a fluid reservoir and then forming the remainder of the fluid ejection device above the sacrificial material on the substrate. Various novel fluid heater structures and an in situ fluid filter may be formed during the manufacturing process. The fluid ejection device can include a heater element located in the fluid chamber behind the nozzle opening. The geometry of the heating element can be planar. Alternatively, the heating element can be located inside the channel in either a half-cylindrical or fully-cylindrical configuration. The internal fluid pathways remain protected from contaminants by the sacrificial material. After all layers and manufacturing processes are complete, individual fluid ejection devices are diced and the sacrificial material is removed.

US Patent:

6927153, Aug 9, 2005

Filed:

Feb 25, 2003

Appl. No.:

10/374305

Inventors:

Alan D. Raisanen - Sodus NY, US
Shelby F. Nelson - Pittsford NY, US

Assignee:

Xerox Corporation - Stamford CT

International Classification:

H01L021/22

US Classification:

438549, 438918

Abstract:

A method that includes providing a semiconductor substrate having a mask on a surface thereof. The mask includes a first region having no masking elements and a second region having a plurality of masking elements. Each of the plurality of masking elements has a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant. The method further includes bombarding the semiconductor substrate and masking element with ions of the dopant. The ions form a first impurity concentration in the first region and a second impurity concentration in the second region.

US Patent:

7198977, Apr 3, 2007

Filed:

Dec 21, 2004

Appl. No.:

11/021739

Inventors:

Deepak Shukla - Webster NY, US
Diane C. Freeman - Pittsford NY, US
Shelby F. Nelson - Pittsford NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 51/40

US Classification:

438 99, 257E51005

Abstract:

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100 C.

US Patent:

7326956, Feb 5, 2008

Filed:

Dec 17, 2004

Appl. No.:

11/015897

Inventors:

Deepak Shukla - Webster NY, US
Diane C. Freeman - Pittsford NY, US
Shelby F. Nelson - Pittsford NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 29/08
H01L 35/24
H01L 51/00

US Classification:

257 40, 257E51005

Abstract:

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100 C.

US Patent:

7422777, Sep 9, 2008

Filed:

Nov 22, 2005

Appl. No.:

11/285238

Inventors:

Deepak Shukla - Webster NY, US
Diane C. Freeman - Pittsford NY, US
Shelby F. Nelson - Pittsford NY, US
Jeffrey T. Carey - Victor NY, US
Wendy G. Ahearn - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

C09K 19/00
G03C 5/00
B32B 27/00
H01L 29/08
H01L 21/322

US Classification:

428 11, 4284735, 438 99, 257 40, 257E51, 430311, 430 20, 430321

Abstract:

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted alicyclic ring system, optionally substituted with electron donating groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100 C.

US Patent:

7495347, Feb 24, 2009

Filed:

Jun 30, 2005

Appl. No.:

11/171654

Inventors:

Alan D. Raisanen - Sodus NY, US
Shelby F. Nelson - Pittsford NY, US

Assignee:

Xerox Corporation - Norwalk CT

International Classification:

H01L 21/027

US Classification:

257797, 438401, 438527, 438528, 438532, 438548, 438549, 438552, 438944, 438948, 257E21036, 257E21039, 257E21058, 257E21023

Abstract:

A method that includes providing a semiconductor substrate having a mask on a surface thereof. The mask includes a first region having no masking elements and a second region having a plurality of masking elements. Each of the plurality of masking elements has a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant. The method further includes bombarding the semiconductor substrate and masking element with ions of the dopant. The ions form a first impurity concentration in the first region and a second impurity concentration in the second region.

US Patent:

7579619, Aug 25, 2009

Filed:

Apr 20, 2005

Appl. No.:

11/110076

Inventors:

Deepak Shukla - Webster NY, US
Shelby F. Nelson - Pittsford NY, US
Diane C. Freeman - Pittsford NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 35/24

US Classification:

257 40, 257E51005, 257E51006, 257E5105

Abstract:

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100 C.

US Patent:

7629605, Dec 8, 2009

Filed:

Oct 31, 2005

Appl. No.:

11/263111

Inventors:

Deepak Shukla - Webster NY, US
Diane C. Freeman - Pittsford NY, US
Shelby F. Nelson - Pittsford NY, US
Jeffrey T. Carey - Victor NY, US
Wendy G. Ahearn - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 51/00
C07D 471/02

US Classification:

257 40, 546 66, 438 17, 438 99

Abstract:

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100 C.