Shing Kit Lee

US Patent:

6433541, Aug 13, 2002

Filed:

Aug 7, 2000

Appl. No.:

09/633198

Inventors:

Kurt R. Lehman - Menlo Park CA
Shing M. Lee - Fremont CA
John Fielden - Los Altos CA

Assignee:

KLA-Tencor Corporation - San Jose CA

International Classification:

G01B 706

US Classification:

324230, 324202, 32420712, 32420716, 324225, 324233, 324234, 438 13, 438 17

Abstract:

Disclosed is a method of obtaining information in-situ regarding a film of a sample using an eddy probe during a process for removing the film. The eddy probe has at least one sensing coil. An AC voltage is applied to the sensing coil(s) of the eddy probe. One or more first signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate the film of the sample. One or more second signals are measured in the sensing coil(s) of the eddy probe when the sensing coil(s) are positioned proximate to a reference material having a fixed composition and/or distance from the sensing coil. The first signals are calibrated based on the second signals so that undesired gain and/or phase changes within the first signals are corrected. A property value of the film is determined based on the calibrated first signals. An apparatus for performing the above described method is also disclosed.

US Patent:

6514775, Feb 4, 2003

Filed:

Nov 9, 2001

Appl. No.:

10/008935

Inventors:

Haiguang Chen - Millbrae CA
Shing Lee - Fremont CA

Assignee:

KLA-Tencor Technologies Corporation - Milpitas CA

International Classification:

H01L 2100

US Classification:

438 8, 438 16, 438692, 451 6

Abstract:

The present invention relates to in-situ techniques for determining process end points in semiconductor wafer polishing processes. Generally, the technique involves utilizing a scanning inspection machine having multiple pair of lasers and sensors located at different angles for detecting signals caused to emanate from an inspected specimen. The detection techniques determine the end points by differentiating between various material properties within a wafer. An accompanying algorithm is used to obtain an end point detection curve that represents a composite representation of the signals obtained from each of the detectors of the inspection machine. This end point detection curve is then used to determine the process end point. Note that computation of the algorithm is performed during the polishing process so that the process end point can be determined without interruptions that diminish process throughputs.

US Patent:

6552803, Apr 22, 2003

Filed:

Aug 17, 1999

Appl. No.:

09/375664

Inventors:

Haiming Wang - Fremont CA
Shing Lee - Fremont CA
Mehrdad Nikoonahad - Menlo Park CA

Assignee:

KLA-Tencor Corporation - San Jose CA

International Classification:

G01B 902

US Classification:

356503, 356502

Abstract:

Thickness of a film in a sample may be detected by directing pump laser pulses to the surface of a sample to generate an acoustic pulse in a sample. The acoustic pulse propagates downwards until it reaches an interface between the bottom of the film and a substrate and is reflected back to the top surface of the film as a first echo. A reflection of the first echo propagates downwards and is again reflected back towards the surface as a second echo. Heterodyne interferometry is used to measure the lapse of time between the first and second echos from which the thickness of the film may be determined.

US Patent:

6611330, Aug 26, 2003

Filed:

Feb 6, 2001

Appl. No.:

09/778245

Inventors:

Shing Lee - Fremont CA
Haiming Wang - Fremont CA
Adam Norton - Palo Alto CA
Mehrdad Nikoonahad - Menlo Park CA

Assignee:

KLA-Tencor Corporation - San Jose CA

International Classification:

G01N 2121

US Classification:

356369, 356630, 356327

Abstract:

A polarized sample beam of broadband radiation is focused onto the surface of a sample and the radiation modified by the sample is collected by means of a mirror system in different planes of incidence. The sample beam focused to the sample has a multitude of polarization states. The modified radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Thickness and refractive information may then be derived from the spectrum. Preferably the polarization of the sample beam is altered only by the focusing and the sample, and the analyzing is done with respect to a fixed polarization plane. In the preferred embodiment, the focusing of the sample beam and the collection of the modified radiation are repeated employing two different apertures to detect the presence or absence of a birefringence axis in the sample. In another preferred embodiment, the above-described technique may be combined with ellipsometry for determining the thicknesses and refractive indices of thin films.

US Patent:

6621264, Sep 16, 2003

Filed:

Jun 5, 2002

Appl. No.:

10/166585

Inventors:

Kurt R. Lehman - Menlo Park CA
Shing M. Lee - Fremont CA
John Fielden - Los Altos CA

Assignee:

KLA-Tencor Corporation - San Jose CA

International Classification:

G01B 706

US Classification:

324230, 324226, 438 13, 438 17

Abstract:

A method for measuring conductance of a sample using an eddy current probe with a sensing coil. The method includes N repetitions of measuring first and second voltage pairs including in-phase and quadrature components of an induced AC voltage in the sensing coil, calibrating the first signal based on the measured second signal at a different separation from the sample and reference material, determining a conductance function relating conductance with location along the selected curve, processing the calibrated first voltage pairs to generate a lift-off curve, determining an intersection voltage pair representing intersection of the lift-off curve with a selected curve, and determining the conductance of the sample from the intersection voltage pair and the conductance function.

US Patent:

6628397, Sep 30, 2003

Filed:

Sep 15, 1999

Appl. No.:

09/396143

Inventors:

Mehrdad Nikoonahad - Menlo Park CA
Shing M. Lee - Fremont CA
Kalman Kele - Santa Cruz CA
Guoheng Zhao - Milpitas CA
Kurt R. Lehman - Menlo Park CA

Assignee:

KLA-Tencor - San Jose CA

International Classification:

G01N 2155

US Classification:

356445

Abstract:

Disclosed is a self-clearing objective for directing a beam towards a sample and clearing away debris from an optical viewing path adjacent to the sample. The self-clearing objective includes an optical element and a substantially transparent fluid flowing between the optical element and the sample such that at least a portion adjacent to the sample is substantially cleared of debris. The optical element and the fluid cooperatively direct the beam towards the sample. This self-clearing objective may be coupled with various measurement devices to measure various characteristics of samples having debris that prevents clear optical measurements. Additionally, the measurement device may be integrated with or coupled to various sample processing systems so that the relevant process may be clearly monitored.

US Patent:

6647032, Nov 11, 2003

Filed:

Jan 31, 2002

Appl. No.:

10/066055

Inventors:

Shing Lee - Fremont CA
David A. G. Deacon - Los Altos CA

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01S 310

US Classification:

372 20, 372 24

Abstract:

A thermally wavelength tunable laser having selectively activated gratings includes a core, more than one periodic arrangement adjacent to the core, and thermo-optical material adjacent to each periodic arrangement. At an off temperature, the refractive index of the periodic arrangement and the adjacent thermo-optical material is the same. By selectively changing the temperature and hence the refractive index in the thermo-optical material adjacent to a selected periodic arrangement, the selected periodic arrangement forms a diffraction grating which can be tuned over a selected wavelength range. By selecting different periodic arrangements, different, non-overlapping wavelength ranges can be selected and the laser can be tuned over a broad range of wavelengths.

US Patent:

6707540, Mar 16, 2004

Filed:

Aug 7, 2000

Appl. No.:

09/633800

Inventors:

Kurt R. Lehman - Menlo Park CA
Shing M. Lee - Fremont CA
John Fielden - Los Altos CA
Guoheng Zhao - Milpitas CA
Mehrdad Nikoonahad - Menlo Park CA

Assignee:

KLA-Tencor Corporation - San Jose CA

International Classification:

G01N 2100

US Classification:

356 72, 324230, 451 6

Abstract:

Disclosed is a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample. The CMP system includes a polishing table, a sample carrier arranged to hold the sample over the polishing table, and an eddy probe. The polishing table and sample carrier are arranged to receive a polishing agent between the sample and the polishing table and to polish the sample by moving the polishing table and the sample carrier relative to each other. The eddy probe is arranged to be operable to obtain a measurement of the sample while the sample is being polished. The CMP system further includes an optical measurement device arranged to be operable to obtain a measurement of the sample while the sample is being polished. The CMP system also has a memory and a processor coupled with the memory. The processor and memory are adapted for operating the eddy probe and optical measurement device.