Shinichi Tanaka

US Patent:

20120126198, May 24, 2012

Filed:

Oct 27, 2011

Appl. No.:

13/283193

Inventors:

Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Shinichi Tanaka - Santa Barbara CA, US
Junichi Sonoda - Kanagawa, JP
Hung Tse Chen - Goleta CA, US
Chih-Chien Pan - Goleta CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

H01L 33/04

US Classification:

257 9, 438 46, 257 13, 257E33008

Abstract:

A light emitting diode (LED) device structure with a reduced Droop effect, and a method for fabricating the LED device structure. The LED is a III-nitride-based LED having an active layer or emitting layer comprised of a multi-quantum-well (MQW) structure, wherein there are eight or more quantum wells (QWs) in the MQW structure, and more preferably, at least nine QWs in the MQW structure. Moreover, the QWs in the MQW structure are grown at temperatures different from barrier layers in the MQW structure, wherein the barrier layers in the MQW structure are grown a temperatures at least 40 C. higher than the QWs in the MQW structure.

US Patent:

20120126283, May 24, 2012

Filed:

Oct 27, 2011

Appl. No.:

13/283259

Inventors:

Yuji Zhao - Goleta CA, US
Junichi Sonoda - Kanagawa, JP
Chih-Chien Pan - Goleta CA, US
Shinichi Tanaka - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

H01L 33/02

US Classification:

257103, 438 46, 257E33023

Abstract:

A III-nitride light emitting diode grown on a semipolar {20-2-1} plane of a substrate and characterized by high power, high efficiency and low efficiency droop.

US Patent:

20120273796, Nov 1, 2012

Filed:

Apr 30, 2012

Appl. No.:

13/459963

Inventors:

Yuji Zhao - Goleta CA, US
Shinichi Tanaka - Santa Barbara CA, US
Chia-Yen Huang - Goleta CA, US
Daniel F. Feezell - Santa Barbara CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

H01L 33/00

US Classification:

257 76, 438 46, 257E33023

Abstract:

A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.

US Patent:

20120313076, Dec 13, 2012

Filed:

Jun 11, 2012

Appl. No.:

13/493430

Inventors:

Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Shinichi Tanaka - Santa Barbara CA, US
Daniel F. Feezell - Santa Barbara CA, US
Yuji Zhao - Goleta CA, US
Chih-Chien Pan - Goleta CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 33/04
H01L 33/32

US Classification:

257 13, 438 47, 257E33008, 257E33023

Abstract:

A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.

US Patent:

20120313077, Dec 13, 2012

Filed:

Jun 11, 2012

Appl. No.:

13/493483

Inventors:

Shuji Nakamura - Santa Barbara CA, US
Steven P. DenBaars - Goleta CA, US
Daniel F. Feezell - Santa Barbara CA, US
Chih-Chien Pan - Goleta CA, US
Yuji Zhao - Goleta CA, US
Shinichi Tanaka - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 33/04
H01L 33/32

US Classification:

257 13, 438 47, 257E33008

Abstract:

High emission power and low efficiency droop semipolar blue light emitting diodes (LEDs).

US Patent:

20130299776, Nov 14, 2013

Filed:

May 9, 2013

Appl. No.:

13/890599

Inventors:

Steven P. DenBaars - Goleta CA, US
Daniel F. Feezell - Albuquerque NM, US
James S. Speck - Goleta CA, US
Chih-Chien Pan - Goleta CA, US
Shinichi Tanaka - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 33/32
H01L 33/00
H01L 33/16
H01L 33/04

US Classification:

257 13, 438 46

Abstract:

A III-nitride based semipolar LED with a light output power of at least 100 milliwatts (mW), or with an External Quantum Efficiency (EQE) of at least 50%, for a current density of at least 100 Amps per centimeter square (A/cm).

US Patent:

20140151634, Jun 5, 2014

Filed:

Feb 6, 2014

Appl. No.:

14/174581

Inventors:

- Oakland CA, US
Steven P. DenBaars - Goleta CA, US
Shinichi Tanaka - Santa Barbara CA, US
Daniel F. Feezell - Albuquerque NM, US
Yuji Zhao - Goleta CA, US
Chih-Chien Pan - Goleta CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

H01L 33/06
H01L 33/32
H01L 33/00

US Classification:

257 13, 438 47

Abstract:

A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.