Shouyin Zhang from Livermore, CA, age 58

Us Patents

Charged Particle Beam System Having Multiple User-Selectable Operating Modes
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US Patent:

8253118, Aug 28, 2012
Filed:

Oct 14, 2009
Appl. No.:

12/579237
Inventors:

Shouyin Zhang - Portland OR, US
Tom Miller - Portland OR, US
Sean Kellogg - Portland OR, US
Anthony Graupera - Hillsboro OR, US
Assignee:

FEI Company - Hillsboro OR
International Classification:

H01J 49/10
H01J 27/02
US Classification:

25049221, 250397, 250398
Abstract:

A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

Charged Particle Beam System Having Multiple User-Selectable Operating Modes
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US Patent:

8445870, May 21, 2013
Filed:

Dec 28, 2011
Appl. No.:

13/338456
Inventors:

Shouyin Zhang - Portland OR, US
Tom Miller - Portland OR, US
Sean Kellog - Portland OR, US
Anthony Graupera - Hillsboro OR, US
Assignee:

FEI Company - Hillsboro OR
International Classification:

H01J 37/30
H01J 37/302
US Classification:

25049221, 250397, 250398
Abstract:

A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

Plasma Igniter For An Inductively Coupled Plasma Ion Source
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US Patent:

20110198511, Aug 18, 2011
Filed:

Feb 23, 2010
Appl. No.:

12/710602
Inventors:

ANTHONY GRAUPERA - Hillsboro OR, US
Sean Kellogg - Portland OR, US
Tom Miller - Portland OR, US
Dustin Laur - Forest Grove OR, US
Shouyin Zhang - Portland OR, US
Assignee:

FEI COMPANY - Hillsboro OR
International Classification:

H01J 3/14
H05H 1/24
US Classification:

250396 R, 31511151
Abstract:

A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

Plasma Igniter For An Inductively Coupled Plasma Ion Source
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US Patent:

20120032092, Feb 9, 2012
Filed:

Oct 19, 2011
Appl. No.:

13/276731
Inventors:

Anthony Graupera - Hillsboro OR, US
Sean Kellogg - Portland OR, US
Tom Miller - Portland OR, US
Dustin Laur - Forest Grove OR, US
Shouyin Zhang - Portland OR, US
Antonius Bastianus Wilhelmus Dirriwachter - Hillsboro OR, US
Assignee:

FEI COMPANY - Hillsboro OR
International Classification:

H01J 3/14
H05B 37/00
H02J 1/00
H05B 37/02
US Classification:

250396 R, 315291, 315176, 307 1
Abstract:

A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

Compact Rf Antenna For An Inductively Coupled Plasma Ion Source
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US Patent:

20120080148, Apr 5, 2012
Filed:

Sep 30, 2010
Appl. No.:

12/894779
Inventors:

Shouyin Zhang - Portland OR, US
Assignee:

FEI COMPANY - Portland OR
International Classification:

C23F 1/08
US Classification:

1563453, 15634548
Abstract:

An inductively coupled plasma ion source for a focused ion beam (FIB) system is disclosed, comprising an insulating plasma chamber with a feed gas delivery system, a compact radio frequency (RF) antenna coil positioned concentric to the plasma chamber and in proximity to, or in contact with, the outer diameter of the plasma chamber. In some embodiments, the plasma chamber is surrounded by a Faraday shield to prevent capacitive coupling between the RF voltage on the antenna and the plasma within the plasma chamber. High dielectric strength insulating tubing is heat shrunk onto the outer diameter of the conductive tubing or wire used to form the antenna to allow close packing of turns within the antenna coil. The insulating tubing is capable of standing off the RF voltage differences between different portions of the antenna, and between the antenna and the Faraday shield.

Plasma Source For Charged Particle Beam System
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US Patent:

20120280136, Nov 8, 2012
Filed:

Jan 18, 2012
Appl. No.:

13/353032
Inventors:

Shouyin Zhang - Portland OR, US
Noel Smith - Lake Oswego OR, US
Walter Skoczylas - Aloha OR, US
Assignee:

FEI COMPANY - Hillsboro OR
International Classification:

H01J 3/14
US Classification:

250396 R
Abstract:

An inductively coupled plasma source for a focused charged particle beam system includes a dielectric liquid that insulates and cools the plasma chamber. A flow restrictor at an electrical potential that is a large fraction of the plasma potential reducing arcing because the voltage drop in the gas occurs primarily at relative high pressure.

Internal Split Faraday Shield For An Inductively Coupled Plasma Source
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US Patent:

20130098871, Apr 25, 2013
Filed:

Oct 19, 2011
Appl. No.:

13/277072
Inventors:

Tom Miller - Portland OR, US
Shouyin Zhang - Portland OR, US
Assignee:

FEI Company - Hillsboro OR
International Classification:

C23F 1/00
C23F 1/08
US Classification:

216 67, 15634539, 15634537
Abstract:

An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.

System For Attachment Of An Electrode Into An Inductively Coupled Plasma Source
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US Patent:

20130134855, May 30, 2013
Filed:

Nov 30, 2011
Appl. No.:

13/307830
Inventors:

Sean Kellogg - Portland OR, US
Anthony Graupera - Hillsboro OR, US
N. William Parker - Hillsboro OR, US
Andrew B. Wells - Portland OR, US
Mark W. Utlaut - Scappoose OR, US
Walter Skoczylas - Aloha OR, US
Gregory A. Schwind - Portland OR, US
Shouyin Zhang - Portland OR, US
Noel Smith - Portland OR, US
Assignee:

FEI Company - Hillsboro OR
International Classification:

H01J 1/02
H05H 1/00
US Classification:

313 39, 313237
Abstract:

An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.