Shu Ling Hu from Lawton, OK, age 65

Metal-Induced Crystallization Of Continuous Semiconductor Thin Films Controlled By A Diffusion Barrier
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US Patent:

20130048985, Feb 28, 2013
Filed:

Aug 24, 2011
Appl. No.:

13/199287
Inventors:

Shu Hu - Pasadena CA, US
Paul C. McIntyre - Sunnyvale CA, US
International Classification:

H01L 29/04
H01L 21/20
US Classification:

257 52, 438486, 438479, 257E2109, 257E29003
Abstract:

A device and a method of forming a continuous polycrystalline Ge film having crystalline Ge islands is provided that includes depositing an amorphous Ge (a-Ge) layer on a substrate, oxidizing the top surface of the a-Ge layer to form a GeOlayer, depositing a seed layer of Al on the GeOlayer and catalyzing the Al seed layer, where Ge mass transport is generated from the underlying a-Ge layer to the Al seed layer through the GeOlayer by thermal annealing, where a continuous polycrystalline Ge film having crystalline Ge islands is formed on the Al seed layer.

Axially-Integrated Epitaxially-Grown Tandem Wire Arrays
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US Patent:

20130213462, Aug 22, 2013
Filed:

Feb 20, 2013
Appl. No.:

13/771617
Inventors:

California Institute of Technology - , US
Shu Hu - Pasadena CA, US
Assignee:

CALIFORNIA INSTITUTE OF TECHNOLOGY - Pasadena CA
International Classification:

H01L 31/0352
US Classification:

136255, 257 15, 257 21, 438479
Abstract:

A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions.

Axially-Integrated Epitaxially-Grown Tandem Wire Arrays
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US Patent:

20190013426, Jan 10, 2019
Filed:

Sep 13, 2018
Appl. No.:

16/130157
Inventors:

- Pasadena CA, US
Shu Hu - Pasadena CA, US
International Classification:

H01L 31/0352
C01B 13/02
C25B 1/00
C25B 9/08
H01L 31/078
H01L 31/18
H01L 31/0687
Abstract:

A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions.