Shuwei Sun

US Patent:

7850876, Dec 14, 2010

Filed:

Nov 11, 2008

Appl. No.:

12/268713

Inventors:

Prabhat Kumar - Framingham MA, US
Richard Wu - Chelmsford MA, US
Shuwei Sun - Framingham MA, US

Assignee:

H.C. Starck Inc. - Newton MA

International Classification:

H01B 1/02

US Classification:

2525201, 252512, 252515, 2525181, 2525205, 20429813, 428142, 428432, 428701

Abstract:

The present invention is directed to a composition consisting essentially of:.

US Patent:

8197894, Jun 12, 2012

Filed:

Nov 8, 2007

Appl. No.:

11/937164

Inventors:

Steven A. Miller - Canton MA, US
Olaf Schmidt-Park - Needham MA, US
Prabhat Kumar - Framingham MA, US
Richard Wu - Chelmsford MA, US
Shuwei Sun - Framingham MA, US
Stefan Zimmermann - Laufenburg, DE

Assignee:

H.C. Starck GmbH - Golsar
H.C. Starck Inc. - Newton MA

International Classification:

B05D 1/12

US Classification:

427192, 427201, 427427

Abstract:

In various embodiments, sputter-target formation includes application of a layer having an intermediate coefficient of thermal expansion between the backing plate and the target material.

US Patent:

8449817, May 28, 2013

Filed:

Jun 30, 2010

Appl. No.:

12/827550

Inventors:

Gary Alan Rozak - Akron OH, US
Mark E. Gaydos - Nashua NH, US
Patrick Alan Hogan - Somerville MA, US
Shuwei Sun - Framingham MA, US

Assignee:

H.C. Stark, Inc. - Newton MA

International Classification:

C22C 45/10
B22F 1/00

US Classification:

420429, 75228, 75255

Abstract:

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.

US Patent:

8449818, May 28, 2013

Filed:

Jun 30, 2010

Appl. No.:

12/827562

Inventors:

Gary Alan Rozak - Akron OH, US
Mark E. Gaydos - Nashua NH, US
Patrick Alan Hogan - Somerville MA, US
Shuwei Sun - Framingham MA, US

Assignee:

H. C. Starck, Inc. - Newton MA

International Classification:

C22C 27/04
C23C 14/14

US Classification:

420429, 20419232, 20419235, 20429802, 20429812, 428546, 428547

Abstract:

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.

US Patent:

8491959, Jul 23, 2013

Filed:

May 7, 2012

Appl. No.:

13/465475

Inventors:

Steven A. Miller - Canton MA, US
Olaf Schmidt-Park - Needham MA, US
Prabhat Kumar - Framingham MA, US
Richard Wu - Chelmsford MA, US
Shuwei Sun - Framingham MA, US
Stefan Zimmerman - Laufenburg, DE

Assignee:

H.C. Starck Inc. - Newton MA

International Classification:

B05D 1/02

US Classification:

427142, 427192, 427427

Abstract:

In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a refractory metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.

US Patent:

20060277767, Dec 14, 2006

Filed:

Jun 14, 2005

Appl. No.:

11/152116

Inventors:

Shuwei Sun - Framingham MA, US
Neville Sonnenberg - Newton MA, US
John Madeira - Assonet MA, US

International Classification:

B26B 21/54

US Classification:

030346540, 030050000

Abstract:

A razor blade including a substrate with a cutting edge defined by a sharpened tip and adjacent facets, a layer of hard coating on the cutting edge, an overcoat layer of chromium nitride on the layer of hard carbon coating, and an outer layer of polytetrafluoroethylene coating over the overcoat layer.

US Patent:

20080099731, May 1, 2008

Filed:

Oct 31, 2006

Appl. No.:

11/590179

Inventors:

Prabhat Kumar - Framingham MA, US
Shuwei Sun - Framingham MA, US

International Classification:

H01B 1/12

US Classification:

252500

Abstract:

The present invention is directed to a composition consisting essentially of:

US Patent:

20090186230, Jul 23, 2009

Filed:

Oct 23, 2008

Appl. No.:

12/256609

Inventors:

Shuwei Sun - Framingham MA, US
Mark Gaydos - Nashua NH, US
Richard Wu - Chelmsford MA, US
Prabhat Kumar - Framingham MA, US

Assignee:

H.C. Starck Inc. - Newton MA

International Classification:

C23C 14/14
C23C 14/35
C23C 14/06
B22F 1/00

US Classification:

428457, 20429813, 20419215, 20419211, 75228, 75246

Abstract:

Metallic materials consisting essentially of a conductive metal matrix, preferably copper, and a refractory dopant component selected from the group consisting of tantalum, chromium, rhodium, ruthenium, iridium, osmium, platinum, rhenium, niobium, hafnium and mixtures thereof, preferably in an amount of about 0.1 to 6% by weight based on the metallic material, alloys of such materials, sputtering targets containing the same, methods of making such targets, their use in forming thin films and electronic components containing such thin films.