Simon Q Nguyen

US Patent:

7406572, Jul 29, 2008

Filed:

Mar 1, 2005

Appl. No.:

11/069499

Inventors:

Simon B. Nguyen - Poway CA, US

Assignee:

Cypress Semiconductor Corp. - San Jose CA

International Classification:

G06F 13/36

US Classification:

711154, 711107, 711202

Abstract:

An architecture for an improved non-volatile memory device supporting multiple memory interface options is disclosed herein. In one embodiment, the improved memory device includes a magnetic random access memory (MRAM) array and at least one memory interface block, which is configured for accessing a different type of memory array other than the MRAM array. A smart MRAM interface block is also included and coupled between the plurality of memory interface blocks and the MRAM array. The smart MRAM array is configured for accessing the MRAM array using commands intended for the MRAM array, as well as commands intended for the different type of memory array. A method for operating the improved non-volatile memory device is also disclosed herein.