Simon Maurice Wood

Address:

3339 Sugar House St, Raleigh, NC 27614

Phone:

9194358339

VIN:

2C4GM68425R659885

Make:

CHRYSLER

Model:

PACIFICA

Year:

2007

US Patent:

6737922, May 18, 2004

Filed:

May 5, 2003

Appl. No.:

10/430461

Inventors:

Raymond Sydney Pengelly - Hillsborough NC
Simon Maurice Wood - Sunnyvale CA

Assignee:

Cree Microwave, Inc. - Sunnyvale CA

International Classification:

H03F 368

US Classification:

330295, 330124 R, 330286

Abstract:

An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. One or more peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90Â transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90Â transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R when the carrier amplifier delivers current to the load, which is one-half the current at maximum power and the amplifier is saturated.

US Patent:

6791417, Sep 14, 2004

Filed:

May 5, 2003

Appl. No.:

10/430568

Inventors:

Raymond Sydney Pengelly - Hillsborough NC
Simon Maurice Wood - Sunnyvale CA

Assignee:

Cree Microwave, Inc. - Sunnyvale CA

International Classification:

H03F 368

US Classification:

330295, 330124 R, 330286

Abstract:

An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. A plurality of peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90Â transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90Â transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R and the carrier amplifier delivers current to the load, which is one-half the current at maximum power when the amplifier is saturated.

US Patent:

6798295, Sep 28, 2004

Filed:

Dec 13, 2002

Appl. No.:

10/318849

Inventors:

Raymond Sydney Pengelly - Hillsborough NC
Simon Maurice Wood - Los Gatos CA
John Phillip Quinn - Mountain View CA

Assignee:

Cree Microwave, Inc. - Sunnyvale CA

International Classification:

H03F 368

US Classification:

330295, 330302, 330307

Abstract:

Disclosed are a multi-chip power amplifier comprising a plurality chips with each chip being a transistor amplifier, and a housing in which all of the semiconductor chips are mounted. A plurality of input leads extend into the housing and a plurality of output leads extend from the housing. A plurality of first matching networks couple a semiconductor chip to an input lead and a plurality of second matching networks couple each semiconductor chip to an output lead whereby each chip has its own input lead and output lead. By providing all amplifier chips within a single housing with matching networks within the housing coupling the chips to the input and output leads, manufacturing cost is reduced and the overall package footprint on a mounting substrate is reduced. Further, the close proximity of the chips within the housing reduces phase differences among signals in the semiconductor chips.

US Patent:

6819184, Nov 16, 2004

Filed:

Nov 6, 2002

Appl. No.:

10/289734

Inventors:

Raymond Sydney Pengelly - Hillsborough NC
Simon Maurice Wood - Los Gatos CA
John Phillip Quinn - Mountain View CA

Assignee:

Cree Microwave, Inc. - Sunnyvale CA

International Classification:

H03F 368

US Classification:

330295, 330286

Abstract:

The linearity of a transistor amplifier comprising a plurality of transistors operating parallel is improved by reducing the odd order transconductance derivatives of signals generated by the transistors. The transistors can be provided in groups with each group having a different bias voltage applied thereto or each group of transistors can have a different input signal applied thereto. The groups of transistors can have different physical parameters such as the width to length ratio of gates in field effect transistors and threshold voltages for the transistors.

US Patent:

7193473, Mar 20, 2007

Filed:

Mar 24, 2005

Appl. No.:

11/090577

Inventors:

Raymond S. Pengelly - Hillsborough NC, US
E. James Crescenzi - Cambria CA, US
Simon M. Wood - Sunnyvale CA, US
Tom Stewart Dekker - Durham NC, US

Assignee:

Cree, Inc. - Durham NC

International Classification:

H03F 3/68

US Classification:

330295, 330124 R, 330149

Abstract:

A high power Doherty RF amplifier utilizes multi-stage amplifier modules for both the main amplifier and the peak amplifiers. In one embodiment of a two way two stage amplifier, the first stage of each amplifier module can include signal pre-distortion whereby the first stage compensates for distortion in both the first and second stages. The design is simple and results in a high efficiency amplifier with high gain. In one embodiment, a commercially available CREE PFM19030SM power module is used in both the main amplifier and the peak amplifier.

US Patent:

8076994, Dec 13, 2011

Filed:

Jun 22, 2007

Appl. No.:

11/767161

Inventors:

Donald Farrell - Raleigh NC, US
Simon Wood - Raleigh NC, US

Assignee:

Cree, Inc. - Durham NC

International Classification:

H03H 7/38

US Classification:

333 32, 330302

Abstract:

A packaged RE power device includes a transistor having a control terminal and an output terminal and configured to operate at a fundamental operating frequency, an RF signal input lead coupled to the control terminal, and an RF signal output lead coupled to the output terminal. A harmonic reducer is coupled to the control terminal and/or the output terminal of the transistor and is configured to provide a short circuit or low impedance path from the control terminal and/or the output terminal to ground for signals at an Nth harmonic frequency of the fundamental operating frequency, where N>1. The device further includes a package that houses the transistor and the harmonic reducer, with the input lead and the output lead extending from the package. Multi-chip packages are also disclosed.

US Patent:

8330265, Dec 11, 2012

Filed:

Jun 22, 2007

Appl. No.:

11/767172

Inventors:

Donald Farrell - Raleigh NC, US
Simon Wood - Raleigh NC, US

Assignee:

Cree, Inc. - Durham NC

International Classification:

H01L 23/48

US Classification:

257690, 257691, 438106, 333 32

Abstract:

A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between the RF input lead and the RF transistor die. The input matching network includes a plurality of capacitors having respective input terminals. The input terminals of the capacitors are coupled to the control terminals of respective ones of the RF transistor cells.

US Patent:

8592966, Nov 26, 2013

Filed:

Dec 8, 2010

Appl. No.:

12/962923

Inventors:

Simon Wood - Raleigh NC, US
Bradley Millon - Durham NC, US

Assignee:

Cree, Inc. - Durham NC

International Classification:

H01L 23/48

US Classification:

257690, 257691, 438106, 333 32

Abstract:

A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between the RF input lead and the RF transistor die. The input matching network includes a plurality of capacitors having respective input terminals. The input terminals of the capacitors are coupled to the control terminals of respective ones of the RF transistor cells. The input matching network further includes a plurality of resistors coupled respectively between adjacent input terminals of the capacitors.