Wolfspeed Jul 2017 - Jun 2018
Director Rf Business Development
Wolfspeed Jul 2017 - Jun 2018
Senior Director Rf Product Development and Applications
Cree Nov 1, 2005 - Jul 2017
Manager of Rf Product Development
Cree Apr 2000 - Nov 2001
Senior Rf Design Engineer
Raytheon Rf Components Nov 1998 - Apr 2000
Senior Rf Design Engineer
Education:
University of Bradford 1991 - 1995
Bachelor of Engineering, Bachelors, Engineering, European Studies
Queen Elizabeth's School
Skills:
Rf Semiconductors Rf Design Electronics Analog Microwave Ic Test Equipment Semiconductor Industry Wireless Circuit Design Analog Circuit Design Mixed Signal Engineering Management Simulations Electrical Engineering Rf Engineering Pcb Design R&D Radio Frequency Characterization Research and Development Integrated Circuits Wireless Technologies Silicon Jmp Microelectronics
Rf Power Transistor Packages With Internal Harmonic Frequency Reduction And Methods Of Forming Rf Power Transistor Packages With Internal Harmonic Frequency Reduction
Donald Farrell - Raleigh NC, US Simon Wood - Raleigh NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H03H 7/38
US Classification:
333 32, 330302
Abstract:
A packaged RE power device includes a transistor having a control terminal and an output terminal and configured to operate at a fundamental operating frequency, an RF signal input lead coupled to the control terminal, and an RF signal output lead coupled to the output terminal. A harmonic reducer is coupled to the control terminal and/or the output terminal of the transistor and is configured to provide a short circuit or low impedance path from the control terminal and/or the output terminal to ground for signals at an Nth harmonic frequency of the fundamental operating frequency, where N>1. The device further includes a package that houses the transistor and the harmonic reducer, with the input lead and the output lead extending from the package. Multi-chip packages are also disclosed.
Rf Transistor Packages With Internal Stability Network And Methods Of Forming Rf Transistor Packages With Internal Stability Networks
Donald Farrell - Raleigh NC, US Simon Wood - Raleigh NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 23/48
US Classification:
257690, 257691, 438106, 333 32
Abstract:
A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between the RF input lead and the RF transistor die. The input matching network includes a plurality of capacitors having respective input terminals. The input terminals of the capacitors are coupled to the control terminals of respective ones of the RF transistor cells.
Rf Transistor Packages With Internal Stability Network Including Intra-Capacitor Resistors And Methods Of Forming Rf Transistor Packages With Internal Stability Networks Including Intra-Capacitor Resistors
Simon Wood - Raleigh NC, US Bradley Millon - Durham NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 23/48
US Classification:
257690, 257691, 438106, 333 32
Abstract:
A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between the RF input lead and the RF transistor die. The input matching network includes a plurality of capacitors having respective input terminals. The input terminals of the capacitors are coupled to the control terminals of respective ones of the RF transistor cells. The input matching network further includes a plurality of resistors coupled respectively between adjacent input terminals of the capacitors.
Rf Transistor Packages With High Frequency Stabilization Features And Methods Of Forming Rf Transistor Packages With High Frequency Stabilization Features
Ulf Hakan Andre - Hillsborough NC, US Simon Maurice Wood - Raleigh NC, US
International Classification:
H03H 7/38
US Classification:
333 32
Abstract:
A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells, an RF input lead coupled to the plurality of RF transistor cells, an RF output lead, and an output matching network coupled between the plurality of RF transistor cells and the RF output lead. The output matching network includes a plurality of capacitors having respective upper capacitor plates, wherein the upper capacitor plates of the capacitors are coupled to output terminals of respective ones of the RF transistor cells. The plurality of capacitors may be provided as a capacitor block that includes a common reference capacitor plate and a dielectric layer on the reference capacitor plate. The upper capacitor plates may be on the dielectric layer.
Bypassed Gate Transistors Having Improved Stability
A transistor includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.
Transistor Amplifiers Having Node Splitting For Loop Stability And Related Methods
A packaged transistor amplifier includes a package having an input lead and an output lead; a transistor stage having a plurality of unit cell transistors that are electrically coupled to the input lead in parallel, each of the unit cell transistors having an output; a first output bond pad that is coupled to a first subset of the outputs of the unit cell transistors by a first feed network; a second output bond pad that is separate from the first output bond pad, the second output bond pad coupled to a second subset of the outputs of the unit cell transistors by a second feed network; a first output bond wire coupled between the first output bond pad and the output lead; and a second output bond wire coupled between the second output bond pad and the output lead. Related design methods are also provided.
Bypassed Gate Transistors Having Improved Stability
A transistor includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.
- Durham NC, US Simon Wood - Raleigh NC, US Scott Sheppard - Chapel Hill NC, US Dan Namishia - Wake Forest NC, US
International Classification:
H01L 27/088 H01L 29/423 H01L 29/417 H01L 29/40
Abstract:
A transistor device includes a source contact extending in a first direction, a gate finger extending in the first direction adjacent the source contact, and a drain contact adjacent the gate finger, wherein the gate finger is between the drain contact and the source contact. The device further includes a gate jumper extending in the first direction, a gate bus connected to the gate jumper and the gate finger, and a gate signal distribution bar that is spaced apart from the gate bus in the first direction and that connects the gate jumper to the gate finger.
CaliforniaI'm a California transplant from England. I used to be a competitive racecar driver and I am a licensed pilot. I share my world with my American wife, Julie... I'm a California transplant from England. I used to be a competitive racecar driver and I am a licensed pilot. I share my world with my American wife, Julie. Our lives are dominated by a longhaired dachshund and five cats. In the last eight years, I've had over 150 stories and articles published. My...
doing charity work in East Africa. Simon Wood, 54, of Laurel Fields, died after being struck by a train on the track between Potters Bar and Brookmans Park stations in August of last year, two days after he was charged by police for a number of sex offences relating to alleged incidents in the UK.
Date: Jul 30, 2014
Category: World
Source: Google
British Airways sued over allegations pilot sexually abused girls on layovers
The 54-year-old British Airways pilot, Simon Wood, committed suicide last year, a coroner told a court hearing in Britain on Wednesday. Wood was able to abuse the girls because of his employment with the airline and the company's community outreach work, said lawyer Nichola Marshall of the firm Leig
Date: Jul 30, 2014
Source: Google
British Airways pilot struck by train 'took his own life' after being accused of child ...
A British Airways spokesman said: "We were shocked and horrified to hear the allegations against Simon Wood, which appear to relate to his involvement in child-related activities entirely outside the scope of his employment with British Airways.
Date: Jul 30, 2014
Category: World
Source: Google
British Airways to be sued over pilot sexual abuse claims
We are shocked and horrified to hear the allegations against Simon Wood, which appear to relate to his involvement in child-related activities entirely outside the scope of his employment with British Airways, the spokesperson said.
University of Bristol - Mathematics and Philosophy, University of Sussex - PGCE, University of Sussex - Multimedia Applications and Virtual Environments
About:
I'm an educational technologist working for the ESRC Wales DTC. Personal tech passions include Wordpress, OS X and iOS. I enjoy Doctor Who, photography, and walking in Pembrokeshire, amongst other...
Simon Wood
Education:
University of Bristol - Mathematics and Philosophy, University of Sussex - PGCE, University of Sussex - Multimedia Applications and Virtual Environments
About:
I've moved my profile on Google+, you can find me now at http://gplus.to/simonwood.
Simon Wood
Work:
OCBC Bank - Head, Branding and Advertising (2012) OCBC Bank - Head, Segment Management (2007-2012) American Express - Various Marketing roles (1998-2007)