Soon K Yuh

US Patent:

6761770, Jul 13, 2004

Filed:

Aug 23, 2002

Appl. No.:

10/226773

Inventors:

Lawrence D. Bartholomew - Felton CA
Robert J. Bailey - Santa Cruz CA
Seung G. Park - Felton CA
Soon K. Yuh - Scotts Valley CA

Assignee:

Aviza Technology Inc. - Scotts Valley CA

International Classification:

C23C 1600

US Classification:

118708, 118663, 118710, 118712, 118715, 4272481

Abstract:

An atmospheric pressure wafer processing system for delivering at least one gas is provided, having an exhaust control feedback system that utilizes sensors to measure the pressure within the system and adjusts control units to maintain the desired set pressures within the system. In particular the sensors measure the small differential pressures inside a muffle, and specifically the load, bypass center and unload sections of the muffle, relative to the chase ambient pressure. Controlling the muffle pressures directly within the atmospheric system yields a more stable pressure balance for processing wafers less subject to changes in the external environment and allows for compensation of varying input gas flows as occurs when the supply pressure to the system may vary. This system and method of pressure control is particularly advantageous for chemical vapor deposition application yielding improved process repeatability over an extended period of runtime.

US Patent:

20010047756, Dec 6, 2001

Filed:

Jan 31, 2000

Appl. No.:

09/494620

Inventors:

Lawrence Bartholomew - Felton CA, US
Soon Yuh - Scotts Valley CA, US
Gregory Stumbo - Scotts Valley CA, US
Mark King - Scotts Valley CA, US
Jeffrey Chan - San Jose CA, US

International Classification:

C23C016/00

US Classification:

118/715000

Abstract:

The present invention provides an apparatus and method for distributing gas to multiple feeds into a chamber to process a substrate In one embodiment, the system includes a process gas injector for introducing process gas into the chamber and a shield assembly having a number of shield bodies adjacent to the process gas injector to reduce deposition of process byproducts thereon. Each shield body has a screen and a metering tube with an array of holes therein to deliver shield gas through the screen. Shield gas is supplied to the metering tubes through a number of flowpaths each having a flow limiter with an orifice sized so that equal flows of shield gas are provided from each of the shield bodies Preferably, the orifices are also sized so that the flow of shield gas through each metering tube is constant, even if the shield gas is supplied from a supply that varies in pressure or flow.

US Patent:

20020192377, Dec 19, 2002

Filed:

Aug 14, 2002

Appl. No.:

10/219924

Inventors:

Lawrence Bartholomew - Felton CA, US
Soon Yuh - Scotts Valley CA, US
Gregory Stumbo - Scotts Valley CA, US
Mark King - Scotts Valley CA, US
Jeffrey Chan - San Jose CA, US

International Classification:

C23C016/00

US Classification:

427/255280, 118/715000, 118/718000

Abstract:

The present invention provides an apparatus and method for distributing gas to multiple feeds into a chamber to process a substrate . In one embodiment, the system includes a process gas injector for introducing process gas into the chamber and a shield assembly having a number of shield bodies , adjacent to the process gas injector to reduce deposition of process byproducts thereon. Each shield body has a screen and a metering tube with an array of holes therein to deliver shield gas through the screen. Shield gas is supplied to the metering tubes through a number of flowpaths , each having a flow limiter with an orifice sized so that equal flows of shield gas are provided from each of the shield bodies . Preferably, the orifices are also sized so that the flow of shield gas through each metering tube is constant, even if the shield gas is supplied from a supply that varies in pressure or flow.

US Patent:

20030061991, Apr 3, 2003

Filed:

Aug 23, 2002

Appl. No.:

10/226459

Inventors:

Colby Mattson - Santa Cruz CA, US
Iraj Hakimelahy - Scotts Valley CA, US
Larry Bartholomew - Felton CA, US
Seung Park - Felton CA, US
Soon Yuh - Scotts Valley CA, US

Assignee:

ASML US, INC.

International Classification:

C23C016/00

US Classification:

118/715000

Abstract:

A protective shield and system for gas distribution are provided for reducing film and process byproduct deposition on surfaces of a Chemical Vapor Deposition system. In one embodiment, the present invention provides a volume insert within the inert gas shield plenum which reduces byproduct deposition buildup on the shield. In another embodiment, the present invention provides vent guide for directing gaseous deposition byproducts to the center of a vent passageway, thus reducing particle deposits on the walls of the vent system. In another embodiment the present invention provides partial plugs installed in the injector purge passageway for the purpose of redirecting and metering inert gas, thus reducing byproduct deposition on the shield and at the ends of the injectors. In another embodiment, the present invention provides a CVD system having a full volume vent assembly with a large capacity for powder buildup, thereby enhancing the runtime before cleaning maintenance is required.

US Patent:

20040018735, Jan 29, 2004

Filed:

May 20, 2003

Appl. No.:

10/442423

Inventors:

Seung Park - Scotts Valley CA, US
Lawrence Bartholomew - Felton CA, US
Soon Yuh - Scotts Valley CA, US

International Classification:

H01L021/311

US Classification:

438/700000

Abstract:

A method of depositing a silicon dioxide film on the surface of a semiconductor substrate or wafer is particularly useful for improved film integrity on difficult topologies such as sub-0.1 micron topologies, high aspect ratio trenches in sub-micron topologies, sidewalls having slight overhangs at layer interfaces, and sidewalls having slightly reentrant areas. In one embodiment, the method involves the deposition of successive thin layers with a silicon-containing source and an oxygen-containing source, each layer deposition being preceded by a pre-treatment of the prior layer involving exposure of the surface to an oxygen-containing source without a silicon-containing source. The deposition of multiple thin silicon dioxide layers continues until a film of desired thickness is formed. For structures containing trenches to be filled, each thin layer is less than half the width of the smallest trench so that preferably multiple layers are used to fill the trenches.

US Patent:

6576060, Jun 10, 2003

Filed:

May 19, 2000

Appl. No.:

09/574826

Inventors:

D. Neil Stoddard - Santa Cruz CA
Soon K. Yuh - Scotts Valley CA

Assignee:

ASML US, Inc. - Scotts Valley CA

International Classification:

C23C 1600

US Classification:

118715, 118718

Abstract:

A gas shield assembly for protecting an exposed surface of an injector in a chemical vapor deposition system. The shield assembly includes a back wall which supports perforated sheets to define a plenum. The sheets are held in place by endcaps. A conduit delivers gas to the plenum. The conduit includes a stretch extending along the back wall and has a bend adjacent the ends of the back wall. The conduit includes perforations along the stretch and at the bends to provide substantially uniform flow of gas into the plenum and the ends.