Stacy A Hall

US Patent:

8003522, Aug 23, 2011

Filed:

Dec 3, 2008

Appl. No.:

12/327425

Inventors:

Hui Chen - South Jordan UT, US
Ihsiu Ho - Salt Lake City UT, US
Stacy W. Hall - West Jordan UT, US
Briant Harward - West Jordan UT, US
Hossein Paravi - Sandy UT, US

Assignee:

Fairchild Semiconductor Corporation - San Jose CA

International Classification:

H01L 21/00

US Classification:

438637, 438646, 438652, 438737, 438782, 257E21029, 257E21252, 257E21257, 257E21577, 257E21586

Abstract:

A method for forming a semiconductor structure includes the following steps. A hard mask layer is formed over a semiconductor region. The hard mask layer has inner portions that are thinner than its outer portions, and the inner portions define an exposed surface area of the semiconductor region. A portion of the semiconductor region is removed through the exposed surface area of the semiconductor region. The thinner portions of the hard mask layer are removed to expose surface areas of the semiconductor region underlying the thinner portions. An additional portion of the semiconductor region is removed through all exposed surface areas of the semiconductor region thereby forming a trench having an upper portion that is wider than its lower portion.

Address:

410 N Chipp St, New Hampton, MO 64471

VIN:

1J8GL48K67W536065

Make:

JEEP

Model:

LIBERTY

Year:

2007