Stacy M Hall

US Patent:

59857617, Nov 16, 1999

Filed:

Jun 19, 1996

Appl. No.:

8/666802

Inventors:

Eric A. Sparks - San Jose CA
Stacy W. Hall - San Antonio TX

Assignee:

VLSI Technology, Inc. - San Jose CA

International Classification:

H01L 2144

US Classification:

438669

Abstract:

An integrated circuit structure includes a conductive layer, a first dielectric layer overlying the conductive layer, a second dielectric layer overlying both the first dielectric layer and the conductive layer and a planarizing layer overlying the second dielectric layer. The conductive layer has a lateral dimension which is greater than a corresponding lateral dimension of the first dielectric layer. Thus the conductive layer and the first dielectric layer form a stepped, pyramidal shaped island. As a result of the stepped, pyramidal shape, the overlying planarizing layer forms with a more planar upper surface than if the sidewall of the island had a vertical profile. In one preferred embodiment of the present invention, the conductive layer is formed from tungsten-silicide, and both of the dielectric layers are either silicon dioxide or silicon nitride.

US Patent:

56400381, Jun 17, 1997

Filed:

Nov 22, 1995

Appl. No.:

8/561768

Inventors:

Eric A. Sparks - San Jose CA
Stacy W. Hall - San Antonio TX

Assignee:

VLSI Technology, Inc. - San Jose CA

International Classification:

H01L 21473

US Classification:

257412

Abstract:

An integrated circuit structure including a conductive layer, a first dielectric layer overlying the conductive layer, a second dielectric layer overlying both the first dielectric layer and the conductive layer and a planarizing layer overlying the second dielectric layer. The conductive layer has a lateral dimension which is greater than a corresponding lateral dimension of the first dielectric layer. Thus the conductive layer and the first dielectric layer form a stepped, pyramidal shaped island. As a result of the stepped, pyramidal shape, the overlying planarizing layer forms with a more planar upper surface than if the sidewall of the island had a vertical profile. In one preferred embodiment of the present invention, the conductive layer is formed from tungsten-silicide, and both of the dielectric layers are either silicon dioxide or silicon nitride.