Stephen D Arthur

US Patent:

6838741, Jan 4, 2005

Filed:

Dec 10, 2002

Appl. No.:

10/314986

Inventors:

Peter M. Sandvik - Guilderland NY, US
Dale M. Brown - Schenectady NY, US
Stephen D. Arthur - Glenville NY, US
Kevin S. Matocha - Troy NY, US
James W. Kretchmer - Ballston Spa NY, US

Assignee:

General Electtric Company - Niskayuna NY

International Classification:

H01L 31107
H01L 3106

US Classification:

257438, 257446, 257463, 257464, 438 48, 438 72, 438 87, 438636

Abstract:

An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150 C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials. According to an embodiment of the present invention, an avalanche photodiode for detecting ultraviolet photons comprises a substrate having a first dopant; a first layer having the first dopant, positioned on top of the substrate; a second layer having a second dopant, positioned on top of the first layer; a third layer having a second dopant, positioned on top of the second layer; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned on top of the third layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the third layer; wherein the avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape; and wherein the avalanche photodiode operates in an environment comprising a temperature approximately equal to 150 degrees Celsius.

US Patent:

7002156, Feb 21, 2006

Filed:

Nov 19, 2004

Appl. No.:

10/994980

Inventors:

Peter M. Sandvik - Guilderland NY, US
Dale M. Brown - Schenectady NY, US
Stephen D. Arthur - Glenville NY, US
Kevin S. Matocha - Troy NY, US
James W. Kretchmer - Ballston Spa NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

G01J 1/24

US Classification:

25037011, 25037001, 25037014, 257438, 257446, 257463, 257464

Abstract:

A detection system for detecting gamma rays including a scintillator crystal for receiving at least one gamma ray and generating at least one ultraviolet ray and an avalanche photodiode for detecting the ultraviolet ray. The avalanche photodiode includes: a substrate having a first dopant; a first layer having a second dopant, positioned on top of the substrate; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned above of the first layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the first layer. The avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape.

US Patent:

7078731, Jul 18, 2006

Filed:

Dec 13, 2004

Appl. No.:

11/010507

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Steven Francis LeBoeuf - Schenectady NY, US
Larry Burton Rowland - Scotia NY, US
Kristi Jean Narang - Voorheeesville NY, US
Huicong Hong - Niskayuna NY, US
Stephen Daley Arthur - Glenville NY, US
Peter Micah Sandvik - Clifton Park NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 33/00

US Classification:

257 94, 257103

Abstract:

A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 10cm, and is substantially free of tilt boundaries.

US Patent:

7175704, Feb 13, 2007

Filed:

Jun 5, 2003

Appl. No.:

10/455007

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Thomas Richard Anthony - Schenectady NY, US
Stephen Daley Arthur - Glenville NY, US
Lionel Monty Levinson - Niskayuna NY, US
John William Lucek - Powell OH, US
Larry Burton Rowland - Scotia NY, US
Suresh Shankarappa Vagarali - Columbus OH, US

Assignee:

Diamond Innovations, Inc. - Worthington OH

International Classification:

C30B 7/10

US Classification:

117 2, 117 1, 117 68, 117 69, 117 70

Abstract:

A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.

US Patent:

7179670, Feb 20, 2007

Filed:

Mar 5, 2004

Appl. No.:

10/794935

Inventors:

Bryan S. Shelton - Bound Brook NJ, US
Sebastien Libon - Tervuren, BE
Hari S. Venugopalan - Somerset NJ, US
Ivan Eliashevich - Maplewood NJ, US
Chen-Lun Hsing Chen - Taipei, TW
Thomas F. Soules - Richmond Heights OH, US
Steven LeBoeuf - Schenectady NY, US
Stephen Arthur - Glenville NY, US

Assignee:

GELcore, LLC - Valley View OH

International Classification:

H01L 21/00

US Classification:

438 26, 438108

Abstract:

A light emitting diode () has a backside and a front-side with at least one n-type electrode () and at least one p-type electrode () disposed thereon defining a minimum electrodes separation (d). A bonding pad layer () includes at least one n-type bonding pad () and at least one p-type bonding pad () defining a minimum bonding pads separation (d) that is larger than the minimum electrodes separation (d). At least one fanning layer () interposed between the front-side of the light emitting diode () and the bonding pad layer () includes a plurality of electrically conductive paths passing through vias () of a dielectric layer () to provide electrical communication between the at least one n-type electrode () and the at least one n-type bonding pad () and between the at least one p-type electrode () and the at least one p-type bonding pad ().

US Patent:

7482634, Jan 27, 2009

Filed:

Sep 24, 2004

Appl. No.:

10/950029

Inventors:

Robert John Wojnarowski - Ballston Lake NY, US
Abasifreke Udo Ebong - Marietta GA, US
Steven Francis LeBoeuf - Schenectady NY, US
Larry Burton Rowland - Scotia NY, US
Stephen D. Arthur - Glenville NY, US

Assignee:

Lockheed Martin Corporation - Bethesda MD

International Classification:

H01L 33/00

US Classification:

257 95, 257 88, 257 94, 257 98, 257E33005

Abstract:

The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.

US Patent:

7527742, May 5, 2009

Filed:

Jun 27, 2005

Appl. No.:

11/167719

Inventors:

Steven Alfred Tysoe - Ballston Spa NY, US
Steven Francis LeBoeuf - Schenectady NY, US
Mark Philip D'Evelyn - Niskayuna NY, US
Venkat Subramaniam Venkataramani - Clifton Park NY, US
Vinayak Tilak - Schenectady NY, US
Jeffrey Bernard Fortin - Niskayuna NY, US
Charles Adrian Becker - Niskayuna NY, US
Stephen Daley Arthur - Glenville NY, US
Samhita Dasgupta - Niskayuna NY, US
Robert John Wojnarowski - Ballston Lake NY, US
Abasifreke Udo Ebong - Marietta GA, US

Assignee:

Momentive Performance Materials Inc. - Albany NY

International Classification:

C03C 15/00
C03C 25/68

US Classification:

216 83, 252 791

Abstract:

An etchant including a halogenated salt, such as Cryolite (NaAlF) or potassium tetrafluoro borate (KBF), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (NaAlF), potassium tetrafluoro borate (KBF), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.

US Patent:

7595241, Sep 29, 2009

Filed:

Aug 23, 2006

Appl. No.:

11/466488

Inventors:

Kevin Sean Matocha - Rexford NY, US
Jody Alan Fronheiser - Selkirk NY, US
Larry Burton Rowland - Scotia NY, US
Jesse Berkley Tucker - Niskayuna NY, US
Stephen Daley Arthur - Glenville NY, US
Zachary Matthew Stum - Niskayuna NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 21/336

US Classification:

438268, 438269, 438273, 257328, 257329, 257E29257

Abstract:

A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.