Stephen J Gibbs

US Patent:

41183037, Oct 3, 1978

Filed:

May 19, 1977

Appl. No.:

5/798384

Inventors:

Stephen R. Gibbs - Escondido CA

Assignee:

Burroughs Corporation - Detroit MI

International Classification:

C25D 1700

US Classification:

204224R

Abstract:

An apparatus for chemically treating a single side of a workpiece, such as for etching or anodizing a semiconductor wafer, comprising, a flat centrally apertured, relatively level table having a top or work surface on which a workpiece is placed face down and of a size and shape commensurate with the dimensions of the workpiece, and means for introducing the liquid for the chemical treatment between the top surface and side of the workpiece to be treated where the liquid passes over the entire surface to be treated and then returns to its source. The apparatus also includes, for certain applications, means for a pre-processing of the workpiece by oxidizing the workpiece surface on the side of the workpiece opposite of the one to be treated to prevent creeping of the liquid around the edges thereof.

US Patent:

40453022, Aug 30, 1977

Filed:

Jul 8, 1976

Appl. No.:

5/703412

Inventors:

Stephen R. Gibbs - Escondido CA
Kuen Chow - Del Mar CA

Assignee:

Burroughs Corporation - Detroit MI

International Classification:

C25D 502
H01L 2348

US Classification:

204 15

Abstract:

A method of making a multilevel conductor pattern for a semiconductor device. An aluminum layer on the substrate surface provides a situs for first level conductors. Successive soft and hard anodization steps are advantageously used to provide excellent intralevel isolation and interlevel electrical connection in desired areas. First level conductor sites are masked and the two anodized films are selectively removed in the desired nonconductive areas. The remaining first level aluminum is completely anodized. An insulating layer is then deposited and vias are formed therethrough to connect a subsequently deposited second level metallization layer with the conductor sites.

US Patent:

41652525, Aug 21, 1979

Filed:

Mar 6, 1978

Appl. No.:

5/883747

Inventors:

Stephen R. Gibbs - Escondido CA

Assignee:

Burroughs Corporation - Detroit MI

International Classification:

H01L 21312
C23F 102

US Classification:

156655

Abstract:

A method for chemically treating a single side of a workpiece, such as for etching or anodizing a semiconductor wafer, comprising, placing such a workpiece face down on a flat centrally apertured, relatively level table having a top or work surface of a size and shape commensurate with the dimensions of the workpiece and introducing the liquid for the chemical treatment between the top surface and side of the workpiece to be treated where the liquid passes over the entire surface to be treated and then returns to its source. The method also includes, for certain applications, a pre-processing of the workpiece by oxidizing the workpiece surface on the side of the workpiece opposite of the one to be treated to be treated to prevent creeping of the liquid around the edges thereof.

US Patent:

40438945, Aug 23, 1977

Filed:

May 20, 1976

Appl. No.:

5/688415

Inventors:

Stephen R. Gibbs - Escondido CA

Assignee:

Burroughs Corporation - Detroit MI

International Classification:

C25D 1706
C25D 1102

US Classification:

204297W

Abstract:

A fixture for holding a semiconductor wafer during anodization. The fixture has a major surface with a plurality of concentric ridges on the surface for supporting a semiconductor wafer, with adjacent ridges defining concentric channels therebetween. The fixture includes electrical contact means for contacting the inward surface of the wafer. At least one channel surrounds the contact and an insulating fluid is circulated in the channel to prevent the anodizing solution from electrically shorting to the contact. Means are also supplied for maintaining a vacuum in another channel to secure the wafer against the ridges of the fixture.