Stephen J Greco

US Patent:

47814870, Nov 1, 1988

Filed:

May 4, 1987

Appl. No.:

7/052112

Inventors:

Stephen P. Greco - East Islip NY

Assignee:

Scientific Industries, Inc. - Bohemia NY

International Classification:

B25G 318
F16B 2100

US Classification:

403326

Abstract:

A coupling which includes an inner and outer part is used to connect two coupled members. The inner part has a cylindrical outer wall and the outer part has a recess around which is a cylindrical inner wall, the recess fitting over the inner part so that the outer wall faces the inner wall. A gliding groove in one wall faces an annular locking member on the other wall, and the annular locking member fits into the groove to lock the inner and outer parts in the mounted position. The gliding groove is shaped to glide over the annular locking member during mounting and dismounting. To prevent the inner and outer part from rotating relative to each other, a key on one part fits into a keyway in the other part. The two parts may be connected by applying a slight compressive force so that the gliding groove glides over the annular locking means into the mounted position. Similarly, a slight tensile force may be applied for dismounting.

US Patent:

20150255342, Sep 10, 2015

Filed:

May 26, 2015

Appl. No.:

14/721323

Inventors:

- Armonk NY, US
Junjing Bao - Cedar Grove NJ, US
Griselda Bonilla - Fishkill NY, US
Samuel S. Choi - Beacon NY, US
James A. Culp - Newburgh NY, US
Thomas W. Dyer - Pleasant Valley NY, US
Ronald G. Filippi - Wappingers Falls NY, US
Stephen E. Greco - Lagrangeville NY, US
Naftali E. Lustig - Croton On Hudson NY, US
Andrew H. Simon - Fishkill NY, US

International Classification:

H01L 21/768

Abstract:

A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.

US Patent:

20150255343, Sep 10, 2015

Filed:

May 26, 2015

Appl. No.:

14/721361

Inventors:

- Armonk NY, US
Junjing Bao - Cedar Grove NJ, US
Griselda Bonilla - Fishkill NY, US
Samuel S. Choi - Beacon NY, US
James A. Culp - Newburgh NY, US
Thomas W. Dyer - Pleasant Valley NY, US
Ronald G. Filippi - Wappingers Falls NY, US
Stephen E. Greco - Lagrangeville NY, US
Naftali E. Lustig - Croton On Hudson NY, US
Andrew H. Simon - Fishkill NY, US

International Classification:

H01L 21/768

Abstract:

A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.

US Patent:

20150255398, Sep 10, 2015

Filed:

May 26, 2015

Appl. No.:

14/721410

Inventors:

- Armonk NY, US
Junjing Bao - Cedar Grove NJ, US
Griselda Bonilla - Fishkill NY, US
Samuel S. Choi - Beacon NY, US
James A. Culp - Newburgh NY, US
Thomas W. Dyer - Pleasant Valley NY, US
Ronald G. Filippi - Wappingers Falls NY, US
Stephen E. Greco - Lagrangeville NY, US
Naftali E. Lustig - Croton On Hudson NY, US
Andrew H. Simon - Fishkill NY, US

International Classification:

H01L 23/532

Abstract:

A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.

US Patent:

20140203435, Jul 24, 2014

Filed:

Jan 18, 2013

Appl. No.:

13/744705

Inventors:

- Armonk NY, US
Junjing Bao - Cedar Grove NJ, US
Griselda Bonilla - Fishkill NY, US
Samuel S. Choi - Beacon NY, US
James A. Culp - Newburgh NY, US
Thomas W. Dyer - Pleasant Valley NY, US
Ronald G. Filippi - Wappingers Falls NY, US
Stephen E. Greco - Lagrangeville NY, US
Naftali E. Lustig - Croton on Hudson NY, US
Andrew H. Simon - Fishkill NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 21/768
H01L 23/532

US Classification:

257751, 438643

Abstract:

A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.