Stephen I Horvath

US Patent:

20130044163, Feb 21, 2013

Filed:

Apr 29, 2010

Appl. No.:

13/641469

Inventors:

Samuel Ajayi - Corvallis OR, US
Sadiq Bengali - Corvallis OR, US
Stephen Horvath - San Diego CA, US
Greg S. Long - Corvallis OR, US
Satya Prakash - San Diego CA, US
Alfred I-Tsung Pan - Sunnyvale CA, US
Mohammed S. Shaarawi - Corvallis OR, US
Roberto A. Pugliese - Tangent OR, US

International Classification:

B41J 2/05
B05D 1/36

US Classification:

347 63, 427402, 427404

Abstract:

A fluid ejection device includes a thin film heater resistor portion having a heater resistor, and a two-layer structure disposed over the heater resistor. The two-layer structure includes a top layer and a bottom layer, with the top layer having a hardness that is at least 1.5 times greater than the hardness of the bottom layer.

US Patent:

20160168675, Jun 16, 2016

Filed:

Jul 12, 2013

Appl. No.:

14/787719

Inventors:

- Houston TX, US
Arun K. AGARWAL - Corvallis OR, US
Roberto A. PUGLIESE - Corvallis OR, US
Greg Scott LONG - Corvallis OR, US
Stephen HORVATH - San Diego CA, US
Douglas A. KESZLER - Corvallis OR, US
John WAGER - Corvallis OR, US
Kristopher OLSEN - Corvallis OR, US
John MCGLONE - Corvallis OR, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX
Oregon State University - Corvallis OR

International Classification:

C22C 45/10
C23C 14/34
C23C 14/14
C22C 27/02
C22C 27/04

Abstract:

The present disclosure is drawn to amorphous thin metal films and associated methods. Generally, an amorphous thin metal film can comprise a combination of four metals or metalloids including: 5 at % to 85 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 85 at % of a first metal; 5 at % to 85 at % of a second metal; and 5 at % to 85 at % of a third metal wherein each metal is independently selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum, wherein the first metal, the second metal, and the third metal are different metals. Typically, the four elements account for at least 70 at % of the amorphous thin metal film.

US Patent:

20160160331, Jun 9, 2016

Filed:

Jul 12, 2013

Appl. No.:

14/787638

Inventors:

- Houston TX, US
Arun K. AGARWAL - Corvallis OR, US
Roberto A. PUGLIESE - Corvallis OR, US
Greg Scott LONG - Corvallis OR, US
Stephen HORVATH - San Diego CA, US
John WAGER - Corvallis OR, US
Douglas A. KESZLER - Corvallis OR, US
Kristopher OLSEN - Corvallis OR, US
John MCGLONE - Corvallis OR, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX
Oregon State University - Corvallis OR

International Classification:

C22C 45/10
C23C 14/34
C23C 14/14

Abstract:

The present disclosure is drawn to amorphous thin metal films and associated methods. Generally, an amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum; and 5 at % to 90 at % of a second metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum, wherein the second metal is different than the first metal. Typically, the three elements account for at least 70 at % of the amorphous thin metal film.

US Patent:

20160075136, Mar 17, 2016

Filed:

Jul 12, 2013

Appl. No.:

14/787711

Inventors:

- Houston TX, US
Arun K. AGARWAL - Corvallis OR, US
Roberto A. PUGLIESE - Corvallis OR, US
Greg Scott LONG - Corvallis OR, US
Stephen HORVATH - San Diego CA, US
Douglas A. KESZLER - Corvallis OR, US
John WAGER - Corvallis OR, US
Kristopher OLSEN - Corvallis OR, US
John MCGLONE - Corvallis OR, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX
Oregon State University - Corvallis OR

International Classification:

B41J 2/14
B41J 2/16

Abstract:

The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.