Stephen Alexander Nelson

Address:

4537 N Versailles Ave, Dallas, TX 75205

Phone:

2144430384

VIN:

1GKUKMEF0AR147209

Make:

GMC

Model:

YUKON XL

Year:

2010

Address:

6739 12 Ave NW, Seattle, WA 98117

VIN:

JHMGD38447S050764

Make:

HONDA

Model:

FIT

Year:

2007

US Patent:

6801098, Oct 5, 2004

Filed:

Jan 31, 2002

Appl. No.:

10/061716

Inventors:

Kazuya Ozawa - Atsugi, JP
Saphan Yok - Rowlett TX
Stephen R. Nelson - Springfield MO

Assignee:

Remec, INC - Del Mar CA

International Classification:

H03H 500

US Classification:

333 28R, 330124 R

Abstract:

A wideband distributed or feedback amplifier monolithic microwave integrated circuit (MMIC) is disclosed that contains an integrated group delay equalizer circuit to compensate for the group delay variation of the amplifier circuitry. The MMIC amplifier is capable of achieving a predicted constant group delay with little variation over a wide frequency range. In addition, the group delay equalizer circuit enables the amplifier to achieve flat (constant) gain over a wide bandwidth, while maintaining constant group delay. Furthermore, the group delay equalizer circuitry requires only a small portion of the total MMIC area.

US Patent:

53769090, Dec 27, 1994

Filed:

May 21, 1993

Appl. No.:

8/065691

Inventors:

Stephen R. Nelson - Richardson TX
Buford H. Carter - Richardson TX
Tammy J. Lahutsky - Plano TX
Glen R. Haas - Plano TX
Dennis D. Davis - Garland TX
Charles W. Suckling - Rushden, GB2
Glenn Collinson - Hitchin, GB2

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2328

US Classification:

333247

Abstract:

This is a package [10] for an rf device [11] operable with a characteristic impedance providing a plurality of terminals [12-19] and [101] for effecting circuit connections to the device, the connection between at least one of the terminals and the device being matched in relation to the characteristic impedance. Other devices and methods are also disclosed.

US Patent:

51592967, Oct 27, 1992

Filed:

Mar 28, 1991

Appl. No.:

7/676649

Inventors:

Stephen R. Nelson - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01P 115

US Classification:

333103

Abstract:

This is a monolithic PIN diode switch circuit. The switch comprises: input ports, output ports, bias nodes and PIN diodes. Each port or node is connected to receive a bias signal. Preferably the PIN diodes are fabricated from GaAs or other III-V compounds. This monolithic PIN diode switch offers broader band performance and smaller size. Other methods and devices are disclosed.

US Patent:

56635974, Sep 2, 1997

Filed:

Nov 23, 1994

Appl. No.:

8/344798

Inventors:

Stephen R. Nelson - Richardson TX
Buford H. Carter - Richardson TX
Dennis D. Davis - Garland TX
Tammy J. Lahutsky - Plano TX
John Barnett - Mesquite TX
Glen R. Haas - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 23495
H01L 2348
H01L 2352

US Classification:

257734

Abstract:

This is a device package comprising: a leadframe comprising a plurality of leads for effecting circuit connections to the device; and a metal ground piece connected to the leadframe. Other devices and methods are also disclosed.

US Patent:

55369065, Jul 16, 1996

Filed:

Jul 23, 1993

Appl. No.:

8/097336

Inventors:

Glen R. Haas - Plano TX
John E. Barnett - Mesquite TX
Stephen R. Nelson - Richardson TX
Douglas J. Darrow - Dallas TX
Susan V. Bagen - Dallas TX
Henry Breit - Attleboro MA
James Forster - Barrington RI

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2302

US Classification:

174 524

Abstract:

In one form of the invention, a package for integrated circuits and devices (42), (46) is disclosed, the package including: a package base (44), the base having a first top surface; a layer of material (43) on the first top surface of the base (44) wherein the material (43) is patterned to cover a portion of the base, and wherein the layer of material (43) forms a substrate having a second top surface; a microstrip transmission line (45) on the second top surface; and a plastic encapsulant (50), wherein the encapsulant covers the first top surface of the base.

US Patent:

51701391, Dec 8, 1992

Filed:

Dec 2, 1991

Appl. No.:

7/801330

Inventors:

Stephen R. Nelson - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01P 115

US Classification:

333103

Abstract:

This is a monolithic PIN diode switch circuit. The switch comprises: input ports, output ports, bias nodes and PIN diodes. Each port or node is connected to receive a bias signal. Preferably the PIN diodes are fabricated from GaAs or other III-V compound. This monolithic PIN diode switch offers broader band performance and smaller size. Other methods and devices are disclosed.

US Patent:

60810068, Jun 27, 2000

Filed:

Aug 13, 1998

Appl. No.:

9/134291

Inventors:

Stephen R. Nelson - Richardson TX

Assignee:

Cisco Systems, Inc. - San Jose CA

International Classification:

H01L 29772

US Classification:

257276

Abstract:

A reduced size field effect transistor is disclosed which has a substrate with a body of semiconductor material having an active region on one surface thereof, and a common conductor located in remote insulated relation to the one surface of the semiconductor body, a pair of source electrodes, a drain electrode and a gate electrode located on the one surface, with the drain electrode having drain fingers located on opposite sides of each of the source electrodes and an air bridge overlying the source electrodes and interconnecting the drain fingers located on opposite sides of each of the source electrodes, the gate electrode having a connection pad at one side thereof and a manifold extending between the source electrodes, and having gate fingers extending between the drain fingers and the source electrodes, and conductive connections between the source electrodes and the common conductor.