Steve Gabe Ghanayem

US Patent:

6464795, Oct 15, 2002

Filed:

May 3, 2000

Appl. No.:

09/563573

Inventors:

Semyon Sherstinsky - San Francisco CA
Calvin Augason - Los Altos CA
Leonel A. Zuniga - San Jose CA
Jun Zhao - Cupertino CA
Talex Sajoto - Campbell CA
Leonid Selyutin - San Leandro CA
Joseph Yudovsky - Campbell CA
Maitreyee Mahajani - San Jose CA
Steve G. Ghanayem - Sunnyvale CA
Tai T. Ngo - Dublin CA
Arnold Kholodenko - San Francisco CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G23C 1600

US Classification:

118728, 118715, 118725

Abstract:

A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.

US Patent:

6638810, Oct 28, 2003

Filed:

Nov 5, 2001

Appl. No.:

10/015203

Inventors:

Mouloud Bakli - Crolles, FR
Steve G. Ghanayem - Los Altos CA
Huyen T. Tran - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 218242

US Classification:

438240, 438396, 438608, 438635, 438660, 438663, 438785

Abstract:

The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and ammonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to forma metal/metal nitride liner/barrier scheme. The invention further provides a process to form a microelectronic device comprising forming a first electrode, forming a metal nitride layer over the first electrode by densifying a metal oxide layer by a nitrating gas to form a metal nitride layer, depositing a dielectric layer over the metal nitride layer, and forming a second electrode over the dielectric layer.

US Patent:

6677247, Jan 13, 2004

Filed:

Jan 7, 2002

Appl. No.:

10/041550

Inventors:

Zheng Yuan - Fremont CA
Steve Ghanayem - Los Altos CA
Randhir P. S. Thakur - San Jose CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

H01L 2100

US Classification:

438723, 438724, 438743, 438744, 438745, 134 13, 216 39, 216 79

Abstract:

A method of forming a contact in an integrated circuit between a first metalization layer and a silicon substrate. In one embodiment the method comprises forming a premetal dielectric layer over the silicon substrate, etching a contact hole through the premetal dielectric layer and then forming a thin silicon nitride layer on an outer surface of the contact hole. The silicon nitride layer reduces overetching that may otherwise occur when oxidation build-up is removed from the silicon interface within the contact hole by a preclean process. After the preclean process, the contact hole is then filled with one or more conductive materials. In various embodiments the silicon nitride layer is formed by exposing the contact hole to a nitrogen plasma, depositing the layer by a chemical vapor deposition process and depositing the layer by an atomic layer deposition process. In other embodiments, the method is applicable to the formation of vias through intermetal dielectric layers.

US Patent:

7192486, Mar 20, 2007

Filed:

Aug 15, 2002

Appl. No.:

10/222398

Inventors:

Won Bang - Santa Clara CA, US
Steve Ghanayem - Los Altos CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
C23C 16/448
C23C 16/52

US Classification:

118715, 118726, 118663, 118666, 118692, 118696, 118697

Abstract:

Processing gases reactive with each other are provided in parallel to a processing chamber through separate delivery lines including mass flow controllers devoted to each line. The parallel delivery lines meet in a mixing manifold located proximate to the processing chamber and relatively far downstream from the mass flow controllers and other flow-constricting components of the gas delivery system. The continuous high flow of gas provided by the devoted mass flow controllers may maintain a sufficiently high pressures on the delivery lines to prevent partial clogging from leading to a further drop in pressure and complete obstruction of the delivery line.

US Patent:

7377002, May 27, 2008

Filed:

Oct 28, 2004

Appl. No.:

10/976012

Inventors:

Joseph Yudovsky - Campbell CA, US
Avi Tepman - Cupertino CA, US
Kenneth R. Reynolds - Los Gatos CA, US
Younes Achkire - Los Gatos CA, US
Dan A. Marohl - San Jose CA, US
Steve G. Ghanayem - Los Altos CA, US
Alexander S. Polyak - San Jose CA, US
Gary Ettinger - Cupertino CA, US
Haochuan Zhang - Milpitas CA, US
Hui Chen - Burlingame CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B08B 1/04

US Classification:

15 77, 15 882, 15 883

Abstract:

A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.

US Patent:

7601652, Oct 13, 2009

Filed:

Jun 21, 2005

Appl. No.:

11/157567

Inventors:

Kaushal K. Singh - Santa Clara CA, US
Sean M. Seutter - San Jose CA, US
Jacob Smith - Santa Clara CA, US
R. Suryanarayanan Iyer - Santa Clara CA, US
Steve G. Ghanayem - Los Altos CA, US
Adam Brailove - Gloucester MA, US
Robert Shydo - Andover MA, US
Jeannot Morin - Intervale NH, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/31

US Classification:

438792, 438791

Abstract:

Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

US Patent:

7745309, Jun 29, 2010

Filed:

Aug 9, 2006

Appl. No.:

11/463425

Inventors:

Randhir P S Thakur - San Jose CA, US
Stephen Moffatt - Jersey, GB
Per-Ove Hansson - San Jose CA, US
Steve Ghanayem - Los Altos CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/30
H01L 21/46

US Classification:

438458, 438455, 257E21568

Abstract:

Methods for promoting interface bonding energy utilized in SOI technology are provided. In one embodiment, the method for promoting interface bonding energy includes providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein, performing a dry cleaning process on a surface of the silicon oxide layer and a surface of the second substrate, and bonding the cleaned silicon oxide surface of the first substrate to the cleaned surface of the second substrate.

US Patent:

7774887, Aug 17, 2010

Filed:

Apr 14, 2008

Appl. No.:

12/102846

Inventors:

Joseph Yudovsky - Campbell CA, US
Avi Tepman - Cupertino CA, US
Kenneth R. Reynolds - Los Gatos CA, US
Younes Achkire - Los Gatos CA, US
Dan A. Marohl - San Jose CA, US
Steve G. Ghanayem - Los Altos CA, US
Alexander S. Polyak - San Jose CA, US
Gary Ettinger - Cupertino CA, US
Haochuan Zhang - Milpitas CA, US
Hui Chen - Burlingame CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B08B 7/00
A47L 25/00

US Classification:

15 77, 15 882, 15 883

Abstract:

A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.