Steven T Chen

US Patent:

6423949, Jul 23, 2002

Filed:

May 19, 1999

Appl. No.:

09/314845

Inventors:

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05B 368

US Classification:

2194441, 118725

Abstract:

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

US Patent:

6525926, Feb 25, 2003

Filed:

Jul 11, 2000

Appl. No.:

09/613384

Inventors:

Steven Chen - Fremont CA

Assignee:

Racklogic Technologies, Inc. - Fremont CA

International Classification:

H05K 502

US Classification:

361683, 361686, 361725, 361731, 3122232

Abstract:

A modular multinode computing apparatus includes a rack mountable enclosure and more than one system board that is secured within the enclosure in a high density configuration that is preferably configured so that the system boards are positioned in substantially the same plane, which is also the plane in which the apparatus resides when mounted within a rack. The enclosure preferably has four system boards, and is sized as a 1 u form factor. When mounted in a rack with like units, the apparatus permits a data center or computing cluster to be fabricated that has a processing density that is much greater than conventional clusters that are configured with 1 u based single node units.

US Patent:

6530992, Mar 11, 2003

Filed:

Jul 9, 1999

Appl. No.:

09/350632

Inventors:

Michael X. Yang - Fremont CA
Henry Ho - San Jose CA
Steven A. Chen - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118695, 118697, 118704, 118715, 118725, 118728, 438791, 700121

Abstract:

Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.

US Patent:

6582522, Jun 24, 2003

Filed:

Mar 2, 2001

Appl. No.:

09/798424

Inventors:

Lee Luo - Fremont CA
Henry Ho - San Jose CA
Shulin Wang - Campbell CA
Binh Hoa Tran - San Jose CA
Alexander Tam - Union City CA
Errol A. C. Sanchez - Dublin CA
Xianzhi Tao - Palo Alto CA
Steven A. Chen - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118715, 118725, 15634529

Abstract:

Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.

US Patent:

6645884, Nov 11, 2003

Filed:

Jul 9, 1999

Appl. No.:

09/350810

Inventors:

Michael X. Yang - Fremont CA
Karl Littau - Palo Alto CA
Steven A. Chen - Fremont CA
Henry Ho - San Jose CA
Ying Yu - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2102

US Classification:

438791, 438584, 438680, 438758, 438774, 438775

Abstract:

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

US Patent:

6646235, Nov 11, 2003

Filed:

Oct 19, 2001

Appl. No.:

10/037151

Inventors:

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05B 368

US Classification:

2194441, 118725

Abstract:

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

US Patent:

D497903, Nov 2, 2004

Filed:

Jan 16, 2004

Appl. No.:

29/197568

Inventors:

Eric Y. Chin - Irvine CA
Steven Chen - Irvine CA

Assignee:

Realworld Technology Inc. - City of Industry CA

International Classification:

1401

US Classification:

D14216, D14211, D14207

US Patent:

D513747, Jan 24, 2006

Filed:

Feb 17, 2004

Appl. No.:

29/199695

Inventors:

Eric Y. Chin - Irvine CA, US
Steven Chen - Irvine CA, US

Assignee:

Realworld Technology Inc. - City of Industry CA

International Classification:

1401

US Classification:

D14216

Address:

76 Arcata, Irvine, CA 92602

VIN:

JTHBE262X82013528

Make:

LEXUS

Model:

IS 350 4-DOOR SEDAN

Year:

2008