41715 Winchester Rd, Temecula, CA 92590 41840 Enterprise Cir N, Temecula, CA 92590
Steven R. Frank Chief Technology Officer
Alvaka Networks Computer Networking · Computer Related Services · Computer Repair · Computer Sales · Computer Training · Internet Service
10 Corporate Park, Irvine, CA 92606 9494285000, 9494307285
Steven Frank
ADVANCED DEFENSE PRODUCTS LLC
Steven T. Frank
J & J WHOLESALING, LTD
Steven Frank
ICHO DAIKO, INC
Steven Frank
SGB HOLDINGS, LLC Buyers Of Precious Metals And Coins · Buyer of Precious Metals · Buyer of Precious Metals & Coins · Mfg Precious Metal Jewelry · Holding Company
16 Cpe Woodbury, Newport Beach, CA 92660 485 E 17 St #500, Costa Mesa, CA 92627 Embassy Suites 600 E Benson Blvd, Anchorage, AK 99503 901 Dover Dr, Newport Beach, CA 92660 9497221149
Steven M. Frank
SANCTORUM
Medicine Doctors
Dr. Steven E Frank, Temecula CA - MD (Doctor of Medicine)
Family Foot Care LLC 1475 Kisker Rd STE 260, Saint Charles, MO 63304 6369284447 (phone), 6369284497 (fax)
Steven Frank DPM LLC 12855 N 40 Dr STE 240, Saint Louis, MO 63141 3144349600 (phone), 3144349601 (fax)
Family Foot Care LLC 300 Medical Plz STE 122, Lake Saint Louis, MO 63367 6369284447 (phone), 6366250060 (fax)
Procedures:
Hallux Valgus Repair
Conditions:
Hallux Valgus Plantar Fascitis Tinea Pedis
Languages:
English
Description:
Dr. Frank works in Saint Louis, MO and 2 other locations and specializes in Podiatric Medicine. Dr. Frank is affiliated with Barnes Jewish Hospital, Missouri Baptist Medical Center and SSM Health St Joseph Hospital Lake Saint Louis.
Steven Frank, Loma Linda CA
Work:
Loma Linda University Medical Center
11234 Anderson St, Loma Linda, CA 92354
Michael L. Beigel - Corona CA Nathaniel Polish - New York NY Steven R. Frank - Golden CO Robert E. Malm - Pacific Palisades CA
Assignee:
Avid Marketing, Inc. - Norco CA
International Classification:
H04Q 100
US Classification:
340 101, 3405722
Abstract:
The coil in the reader that is used to establish an alternating magnetic field is transformer-coupled through capacitors to a push-pull driving circuit consisting of four field-effect transistors connected in a bridge arrangement. The coil, capacitors, and coupling circuitry are maintained in a tuned condition by continually adjusting either the driving frequency, the coil inductance, or the capacitor capacitance during communications. A tag utilizes a coil to couple with the readers alternating magnetic field and a capacitor to resonate the coil, thereby extracting power from the field more efficiently. Transformer coupling of the coil and capacitor is utilized for improved impedance matching. The coil, capacitor, and coupling circuitry can be maintained in a tuned condition by continually adjusting either the coil inductance, or the capacitor capacitance during communications. Certain configurations of the system may require that tuning maintenance be discontinued during the transmission of data.
Electronic Identification System With Improved Sensitivity
Michael L Beigel - Corona CA, US Nathaniel Polish - New York NY, US Steven R Frank - Golden CO, US Robert E Malm - Pacific Palisades CA, US
Assignee:
Avid Identification Systems Inc. - Norco CA
International Classification:
H04Q 1/00
US Classification:
340 101, 3405721
Abstract:
The electronic identification system provides two-way communications between reader and tags using alternating magnetic fields established by the reader and tag. Communication is accomplished by utilizing either a one-step or a two-step modulation process in which the information to be communicated either modulates an alternating magnetic field directly or modulates a periodic signal which modulates an alternating magnetic field. The coil in the reader that is used to establish an alternating magnetic field is transformer-coupled through capacitors to a push-pull driving circuit consisting of four field-effect transistors connected in a bridge arrangement. The coil, capacitors, and coupling circuitry are maintained in a tuned condition by continually adjusting either the driving frequency, the coil inductance, or the capacitor capacitance during communications. A tag utilizes a coil to couple with the reader's alternating magnetic field and a capacitor to resonate the coil, thereby extracting power from the field more efficiently. Transformer coupling of the coil and capacitor is utilized for improved impedance matching.
Electronic Identification System With Improved Sensitivity
MICHAEL L. BEIGEL - Corona CA, US Nathaniel Polish - New York NY, US Steven R. Frank - Golden CO, US Robert E. Malm - Pacific Palisades CA, US
International Classification:
H04Q 5/22
US Classification:
340 101
Abstract:
The electronic identification system provides two-way communications between reader and tags using alternating magnetic fields established by the reader and tag. Communication is accomplished by utilizing either a one-step or a two-step modulation process in which the information to be communicated either modulates an alternating magnetic field directly or modulates a periodic signal which modulates an alternating magnetic field. The coil in the reader that is used to establish an alternating magnetic field is transformer-coupled through capacitors to a push-pull driving circuit consisting of four field-effect transistors connected in a bridge arrangement. The coil, capacitors, and coupling circuitry are maintained in a tuned condition by continually adjusting either the driving frequency, the coil inductance, or the capacitor capacitance during communications. A tag utilizes a coil to couple with the reader's alternating magnetic field and a capacitor to resonate the coil, thereby extracting power from the field more efficiently. Transformer coupling of the coil and capacitor is utilized for improved impedance matching. The coil, capacitor, and coupling circuitry can be maintained in a tuned condition by continually adjusting either the coil inductance, or the capacitor capacitance during communications. Certain configurations of the system may require that tuning maintenance be discontinued during the transmission of data.
Thermal Isolation Of Hybrid Thermal Detectors Through An Anisotropic Etch
William K. Walker - Plano TX Steven N. Frank - McKinney TX Charles M. Hanson - Richardson TX Robert J. S. Kyle - Rowlett TX Edward G. Meissner - Dallas TX Robert A. Owen - Rowlett TX Gail D. Shelton - Mesquite TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 27095
US Classification:
257448
Abstract:
A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlaying contact pad (104).
Multiple Level Mask For Patterning Of Ceramic Materials
James F. Belcher - Plano TX Steven N. Frank - McKinney TX John P. Long - Garland TX Jeanee Jones - Plano TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
B44C 122 C03C 1500
US Classification:
216 17
Abstract:
A novel multiple level mask (e. g. tri-level mask 36) process for masking achieves a desired thick mask with substantially vertical walls and thus improves the ion milling process of ceramic materials (e. g. BST). An embodiment of the present invention is a microelectronic structure comprising a ceramic substrate, an ion mill mask layer (e. g. photoresist 42) overlaying the substrate, a dry-etch-selective mask layer (e. g. TiW 40) overlaying the ion mill mask layer, the dry-etch-selective mask layer comprising a different material than the ion mill mask layer, a top photosensitive layer (38) overlaying the dry-etch-selective mask layer, the top photosensitive layer comprising a different material than the dry-etch-selective mask layer, and a predetermined pattern formed in the top photosensitive layer, the dry-etch-selective mask layer and the ion mill mask layer. The predetermined pattern has substantially vertical walls in the ion mill mask layer.
Inter-Pixel Thermal Isolation For Hybrid Thermal Detectors
Gail D. Shelton - Mesquite TX James F. Belcher - Plano TX Steven N. Frank - McKinney TX Charles M. Hanson - Richardson TX Edward G. Meissner - Dallas TX Robert A. Owen - Rowlett TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H04N 533
US Classification:
250332
Abstract:
A thermal detection system (100, 200) includes a focal plane array (102, 202), a thermal isolation structure (104, 204) and an integrated circuit substrate (106, 206). The focal plane array (102, 202) includes thermal sensors (114, 214) formed from a pyroelectric element (116, 216), such as barium strontium titanate (BST). One side of the pyroelectric element (116, 216) is coupled to a contact pad (110, 210) disposed on the integrated circuit substrate (106, 206) through a mesa strip conductor (112, 212) of the thermal isolation structure (104, 204). The other side of the pyroelectric element (116, 216) is coupled to a common electrode (120, 220). In one embodiment, slots (128) are formed in the common electrode (120) intermediate the thermal sensors (114) to improve inter-pixel thermal isolation. In another embodiment, slots (236) are formed in the optical coating (224) to improve inter-pixel thermal isolation. The common electrode (120, 220) may be formed from a thermally insulating material, such as a silicon monoxide and chromium matrix (cermet) or other metal oxide.
Novel Method For Catalyst Application To A Substrate For Fuel Cell Electrodes
Steven N. Frank - McKinney TX James G. Frank - Garland TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
B05D 512
US Classification:
427113
Abstract:
An improved method of making a fuel cell electrode wherein a thin carbonized paper-like substrate is first impregnated with an electrolyte-repelling material, and thereafter a thin layer of catalyst material is screen printed thereupon.
Method For Forming Electrical Contact To The Optical Coating Of An Infrared Detector From The Backside Of The Detector
Steven N. Frank - McKinney TX James F. Belcher - Plano TX Charles E. Stanford - Plano TX Robert A. Owen - Rowlett TX Robert J. S. Kyle - Rowlett TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 2144
US Classification:
437180
Abstract:
This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing a common electrode layer 31 over the thermal isolation trenches 22; depositing an optical coating 26 above the common electrode layer 31; mechanically thinning the substrate to expose the trench filler 24; etching to remove the trench filler 24 in the bias contact area; depositing a contact metal 34 on the backside of the substrate 20, wherein the contact metal 34 connects to the common electrode layer 31 at bias contact areas 34 around a periphery of the thermal isolation trenches; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. Bias contact vias 23 may be formed in the bias contact areas and then filled with bias contact metal 49. Alternately, the bias contact vias may also be filled with the contact metal 34.