Steven A George

US Patent:

7547952, Jun 16, 2009

Filed:

May 30, 2006

Appl. No.:

11/420928

Inventors:

Craig Metzner - Fremont CA, US
Shreyas Kher - Campbell CA, US
Yeong Kwan Kim - Pleasanton CA, US
M. Noel Rocklein - Boulder CO, US
Steven M. George - Boulder CO, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 29/72
H01L 21/3205
H01L 21/4763
H01L 21/31
H01L 21/469
H01L 21/10
H01L 21/26

US Classification:

257411, 257410, 438590, 438763, 438785, 438786, 438493

Abstract:

The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

US Patent:

20040198069, Oct 7, 2004

Filed:

Apr 4, 2003

Appl. No.:

10/407930

Inventors:

Craig Metzner - Fremont CA, US
Shreyas Kher - Campbell CA, US
Yeong Kim - Pleasanton CA, US
M. Rocklein - Boulder CO, US
Steven George - Boulder CO, US

Assignee:

APPLIED MATERIALS, INC.

International Classification:

C23C016/06
C23C016/00
H01L021/31
H01L021/469

US Classification:

438/785000, 427/255320, 427/255700, 438/778000

Abstract:

The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

US Patent:

20210242031, Aug 5, 2021

Filed:

Feb 1, 2021

Appl. No.:

17/164649

Inventors:

- Tokyo, JP
- Boulder CO, US
Jacques Faguet - Austin TX, US
David Zywotko - Boulder CO, US
Steven M. George - Boulder CO, US

International Classification:

H01L 21/311
H01L 21/02

Abstract:

Method for selective etching of materials using an ultrathin etch stop layer (ESL), where the ESL is effective at a thickness as small as approximately one monolayer using atomic layer etching (ALE). A substrate processing method includes depositing a first film on a substrate, depositing a second film on the first film, and selectively etching the second film relative to the first film using an ALE process, where the etching self-terminates at an interface of the second film and the first film.