Steven E Huettner

US Patent:

6707417, Mar 16, 2004

Filed:

Jun 11, 2002

Appl. No.:

10/166948

Inventors:

Steven Edward Huettner - Tucson AZ
Steven Craig Rein - Oro Valley AZ
Douglas Richard Baker - Tucson AZ

Assignee:

Raytheon Company - Waltham MA

International Classification:

G01S 740

US Classification:

342174, 342 68, 342 82, 342 89, 342165, 342173, 342175, 102206, 102211, 102214

Abstract:

A radar system having a tactical mode and a calibration mode includes a transmitter section for providing high-power amplification of an RF pulsed waveform from an exciter during the tactical mode and the calibration mode. A circulator system has an input port connected to an output of the transmitter section and including first, second and third switchable junctions, and a high-power attenuator. The circulator system provides a transmit tactical mode signal path and a transmit calibration mode signal path of virtually identical electrical path lengths for a transmitter output signal, the tactical path passing through the first, second and third junctions in a first direction to an antenna I/O port, the calibration path passing through the first, second and third junctions in a second direction and through the high-power attenuator to an output port. A receiver section is coupled to the output port and includes a receive tactical mode signal path through a low noise amplifier (LNA), mixer, and an intermediate frequency (IF) amplifier to an IF output port for down-converting a radar signal. The receiver section further includes a receive calibration mode signal path through an attenuator which bypasses the LNA and passes through the mixer and IF amplifier to the IF output port.

US Patent:

8319583, Nov 27, 2012

Filed:

Aug 24, 2009

Appl. No.:

12/545980

Inventors:

Steven E. Huettner - Tucson AZ, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01P 5/12

US Classification:

333136, 333100, 333125, 333128, 333134

Abstract:

An N-way multi-layer radial power combiner/divider comprises an RF layer including N planar RF transmission lines radiating from a common port to N ports. An isolation layer substantially parallel to the RF layer comprises a star resistor having N resistive arms radiating from a common junction and N planar isolation transmission lines coupled in series to respective resistive arms. Each series pair of a resistive arm and an isolation transmission line is ideally a half-wavelength in electrical length. N vertical interconnects between the RF layer and the isolation layer connect the ends of the N isolation transmission lines to the ends of the N RF transmission lines at the N individual ports, respectively. Any path from one individual port through the common junction of the star resistor to another individual port is approximately a full wavelength λc or multiple thereof so that the phase angle through the isolation network is approximately zero degrees. This approach can achieve better isolation and power handling than the Wilkinson design while employing the benefits of planar metallization technology.

US Patent:

58567135, Jan 5, 1999

Filed:

Oct 24, 1997

Appl. No.:

8/957472

Inventors:

Steven E. Huettner - Billerica MA
William F. Miccioli - Waltham MA

Assignee:

Raytheon Company - Lexington MA

International Classification:

H01P 110

US Classification:

307125

Abstract:

A multiple terminal selector switch for use with millimeter-wave signals has a layout of components enabling the switch to be constructed on a monolithic microwave integrated circuit (MMIC) chip while maintaining adequately low cross talk among ports of the switch to retain isolation among its ports. The circuitry includes a transmission line having multiple taps spaced apart by an integral number of half wavelengths of the signal, wherein the taps connect to separate ports via arms of the circuit. Each arm has an electronically switchable element for producing open or short circuits for connection and disconnection of a switch port from the transmission line. One primary tap of the transmission line is unswitched and connects with a further port from which, or to which, signals of the other ports are selectively switched. A driver circuit for control of the switching elements in the respective arms is disposed within a central region of the switching circuit, while the transmission line encircles at least a portion of the driver circuit.

US Patent:

53493125, Sep 20, 1994

Filed:

May 28, 1993

Appl. No.:

8/068911

Inventors:

Steven E. Huettner - Billerica MA
Maureen A. Daly - Pelham NH
Derek J. Fitzgerald - Lincoln MA

Assignee:

Raytheon Company - Lexington MA

International Classification:

H01P 122

US Classification:

333 81A

Abstract:

A voltage variable attenuator is described including a quadrature hybrid coupler having an input port, an output port, a first reflective port and a second reflective port. The voltage variable attenuator further includes a first and a second impedance network, the first impedance network connected to the first reflective port of the quadrature hybrid coupler, the second impedance network connected to the second reflective port of the quadrature hybrid coupler, each impedance network including a first RF propagation network having a first end connected to the respective reflective port of the quadrature hybrid coupler. Each impedance network further includes a second end of the first RF propagation network connected to a field effect transistor having a drain electrode, a source electrode and a gate electrode, the drain electrode connected to the second end of the first RF propagation network. Completing each impedance network is a second RF propagation network having a first end connected to the source electrode and a second electrode connected to a ground through a plated via hole.