Steven A Lester

US Patent:

6573537, Jun 3, 2003

Filed:

Mar 29, 2001

Appl. No.:

09/821684

Inventors:

Daniel A. Steigerwald - Cupertino CA
Steven D. Lester - Palo Alto CA

Assignee:

Lumileds Lighting, U.S., LLC - San Jose CA

International Classification:

H01L 3300

US Classification:

257103, 257 79, 257 91, 257 94, 257 96, 257 98, 257 99

Abstract:

An inverted III-nitride light-emitting device (LED) with highly reflective ohmic contacts includes n- and p-electrode metallizations that are opaque, highly reflective, and provide excellent current spreading. The n- and p-electrodes each absorb less than 25% of incident light per pass at the peak emission wavelength of the LED active region.

US Patent:

6806110, Oct 19, 2004

Filed:

May 16, 2002

Appl. No.:

10/151646

Inventors:

Steven D. Lester - Palo Alto CA
Virginia M. Robbins - Los Gatos CA
Jeffrey N. Miller - Los Altos Hills CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L 2100

US Classification:

438 28, 438 34

Abstract:

A monolithic array of vertical cavity lasers with different emission wavelengths on a single wafer, and method of manufacture therefor, is provided. A first reflector is over the semiconductor substrate with a photoactive semiconductor layer. A reflector support defines first and second air gaps with the photoactive semiconductor layer. The second and third air gaps are made to be different from each other by geometric differences in the reflector support structure. Second and third reflectors are formed over the reflector support whereby a first laser is formed by the first reflector, the photoactive semiconductor structure, the first air gap, and the second reflector and whereby a second laser is formed by the first reflector, the photoactive semiconductor structure, the second air gap, and the third reflector. The emission wavelengths of the first and second lasers are different because of the different sizes of the first and second air gaps.

US Patent:

6953702, Oct 11, 2005

Filed:

May 16, 2002

Appl. No.:

10/151631

Inventors:

Jeffrey N. Miller - Los Altos Hills CA, US
Virginia M. Robbins - Los Gatos CA, US
Steven D. Lester - Palo Alto CA, US

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L021/20

US Classification:

438 22, 438 35

Abstract:

Vertical cavity optical devices, and a method of manufacturing therefor, are provided where the method includes partially forming a first vertical cavity optical device on a wafer, adjusting the lasing wavelength of the first vertical cavity optical device, and fixing the lasing wavelength of the first vertical cavity optical device to complete the forming thereof.

US Patent:

7095052, Aug 22, 2006

Filed:

Oct 22, 2004

Appl. No.:

10/971380

Inventors:

Steven D. Lester - Palo Alto CA, US

Assignee:

Avago Technologies ECBU IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H01L 27/15

US Classification:

257 79, 257 88, 257 89, 257 90, 257 94

Abstract:

The efficiency of LEDs is increased by incorporating multiple active in series separated by tunnel junction diodes. This also allows the LEDs to operate at longer wavelengths.

US Patent:

7273798, Sep 25, 2007

Filed:

Aug 1, 2005

Appl. No.:

11/194237

Inventors:

Steven D. Lester - Palo Alto CA, US
Virginia M. Robbins - Los Gatos CA, US
Scott W. Corzine - Sunnyvale CA, US

Assignee:

Avago Technologies ECBU IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H01L 21/301
H01L 21/461

US Classification:

438458, 438455

Abstract:

A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.

US Patent:

7473941, Jan 6, 2009

Filed:

Aug 15, 2005

Appl. No.:

11/203917

Inventors:

Virginia M. Robbins - Los Gatos CA, US
Steven D. Lester - Palo Alto CA, US
Jeffrey N. Miller - Los Altos Hills CA, US
David P. Bour - Cupertino CA, US

Assignee:

Avago Technologies ECBU IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H01L 33/00

US Classification:

257102, 257104

Abstract:

A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.

US Patent:

7495314, Feb 24, 2009

Filed:

Sep 26, 2005

Appl. No.:

11/234993

Inventors:

Jeffrey N. Miller - Los Altos Hills CA, US
David P. Bour - Cupertino CA, US
Virginia M. Robbins - Los Gatos CA, US
Steven D. Lester - Palo Alto CA, US

Assignee:

Avago Technologies ECBU IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H01L 29/22

US Classification:

257614, 257744, 257741, 257750, 257 78, 257191, 438 37

Abstract:

An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.

US Patent:

7573074, Aug 11, 2009

Filed:

May 19, 2006

Appl. No.:

11/437570

Inventors:

Frank T. Shum - Sunnyvale CA, US
William W. So - Sunnyvale CA, US
Steven D. Lester - Sunnyvale CA, US

Assignee:

Bridgelux, Inc. - Sunnyvale CA

International Classification:

H01L 33/00
H01L 29/22

US Classification:

257 99, 257 88, 257 98, 257103, 257E33068, 257E27121, 372 4501, 372 45011, 372 501, 438 25, 438 35

Abstract:

An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination.