Steven L Richards

US Patent:

6661017, Dec 9, 2003

Filed:

May 29, 2002

Appl. No.:

10/157091

Inventors:

Steven Richards - Georgetown MA

Assignee:

Ibis Technology Corporation - Danvers MA

International Classification:

A61N 500

US Classification:

25049221, 31511181

Abstract:

The present invention provides improved ion implantation systems and methods in which a high voltage probe is utilized in an ion implantation system to directly measure energy of an ion beam incident on a substrate. More particularly, an exemplary ion implantation system can include an ion source maintained at a high electric potential that generates ions, and a plurality of extraction electrodes that can accelerate the ions to a desired energy. The system further includes an end-station, maintained at ground electric potential, in which a wafer holding for positioning a wafer in the path of an ion beam is disposed. The ion implantation system is further characterized by a high energy probe disposed between a high voltage terminus of the ion source and ground for directly measuring the energy of the ions.

US Patent:

6794662, Sep 21, 2004

Filed:

Oct 7, 2003

Appl. No.:

10/680829

Inventors:

William Leavitt - Haverhill MA
Steven Richards - Georgetown MA
Julian G. Blake - Gloucester MA

Assignee:

Ibis Technology Corporation - Danvers MA

International Classification:

H01J 3720

US Classification:

25049221, 25044011, 25044211

Abstract:

Wafer-holding structures formed from thermosetting resins are disclosed for use in semiconductor processing including, for example, SIMOX wafer processing. In one embodiment a pin is disclosed that is adapted to receive a wafer edge, and is coupled with a wafer holder assembly. The pin can be filled with a conductive material to provide an electrical pathway between the wafer and the wafer holder assembly, which can be coupled to a ground. This arrangement provides a conductive path for inhibiting electrical discharges from the wafer during the ion implantation process. The pin exhibits thermal isolation characteristics and sufficient hardness so as to not effect localized thermal dissipation of the wafer, yet is sufficiently soft so as to not mark or otherwise damage the wafer.

US Patent:

6815696, Nov 9, 2004

Filed:

May 29, 2002

Appl. No.:

10/157947

Inventors:

Steven Richards - Georgetown MA
Christopher Berry - Exeter NH
William Leavitt - Haverhill MA

Assignee:

Ibis Technology Corporation - Danvers MA

International Classification:

H01L 2100

US Classification:

25049221, 438694, 438667

Abstract:

The present invention provides a beam stop for use in an ion implantation system that includes a base formed of a thermally conductive material, and a heat transfer layer formed of a semi-elastic material that is disposed on a surface of the base. The beam stop further includes one or more tiles, each formed of a thermally conductive refractory material, that are disposed on the semi-elastic layer so as to face an ion beam in the implantation system. The heat transfer layer transfers heat generated in the tile in response to ion beam impact to the base. The base in turn can be coupled to a heat sink to remove heat from the base. The thickness and the thermal conductivity of the base, and those of the heat transfer layer and the tile are chosen so as to ensure uniform expansion of the base and the tile when the beam stop is heated by ion beam impact.

US Patent:

6863736, Mar 8, 2005

Filed:

May 29, 2002

Appl. No.:

10/157687

Inventors:

William Leavitt - Haverhill MA, US
Richard Muka - Topsfield MA, US
Steven Richards - Georgetown MA, US

Assignee:

Ibis Technology Corporation - Danvers MA

International Classification:

H01L021/00
C23C016/00

US Classification:

118730, 118715, 118733, 118500, 2504921, 15634555, 165177

Abstract:

The present invention provides a rotating shaft that can extend between two regions having different ambient pressures. The rotating shaft can include a rotatable hollow outer shell that is coupled to a proximal portion of an inner shaft with a limited number of contact points. A plurality of thermal breaks disposed between the inner shaft and the hollow outer shell impede heat transfer between these two components. A rotary seal coupled to the distal portion of the inner shaft preserves the pressure differential between the two regions. Further, a heat sink removes heat transferred to the seal to ensure that the temperature of the seal remains within a range suitable for its operation. The rotating shaft of the invention can be utilized, for example, in an ion implantation system by the coupling of the outer shell to a wafer holder to position and orient a wafer in a path of an ion beam.

US Patent:

7067829, Jun 27, 2006

Filed:

Nov 23, 2004

Appl. No.:

10/995836

Inventors:

Steven Richards - Georgetown MA, US
Julian G. Blake - Gloucester MA, US
Steven Campbell - Newburyport MA, US

Assignee:

Ibis Technology Coporation - Danvers MA

International Classification:

H01J 37/317

US Classification:

25049221, 2504922, 2504923, 2504921

Abstract:

In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e. g. , vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.

US Patent:

8101488, Jan 24, 2012

Filed:

Dec 25, 2010

Appl. No.:

12/978558

Inventors:

Theodore H. Smick - Essex MA, US
Steven Richards - Georgetown MA, US
Geoffrey Ryding - Manchester MA, US
Kenneth H Purser - Gloucester MA, US

Assignee:

Twin Creeks Technologies, Inc. - San Jose CA

International Classification:

H01L 21/336
H01L 21/425

US Classification:

438305, 438514, 438515, 438520, 250423 R, 250424, 25049221, 257E21001

Abstract:

Embodiments of the present invention provide for a system for accelerating hydrogen ions. A hydrogen generator holding a supply of water is configured to generate a flow of hydrogen gas from the supply of water. An ion source structure is configured to generate a plurality of hydrogen ions from the flow of hydrogen gas. An accelerator tube is configured to accelerate the plurality of hydrogen ions. The supply of water has an isotopic ratio of deuterium that is smaller than the isotopic ratio of deuterium in Vienna Standard Mean Ocean Water.

US Patent:

8227763, Jul 24, 2012

Filed:

Mar 25, 2009

Appl. No.:

12/411048

Inventors:

Steven Richards - Georgetown MA, US
Geoffrey Ryding - Manchester MA, US
Theodore Smick - Essex MA, US

Assignee:

Twin Creeks Technologies, Inc. - San Jose CA

International Classification:

H01J 27/00

US Classification:

250423R, 250424, 2504921, 2504922, 2504923, 336182, 323215, 323247, 323301, 323305, 323355

Abstract:

A sequence of series-connected transformers for transmitting power to high voltages incorporates an applied voltage distribution to maintain each transformer in the sequence below its withstanding voltage.

US Patent:

8437156, May 7, 2013

Filed:

Aug 6, 2009

Appl. No.:

12/537022

Inventors:

Steven Richards - Georgetown MA, US
Geoffrey Ryding - Manchester MA, US
Theodore Smick - Essex MA, US

Assignee:

GTAT Corporation - Nashua NH

International Classification:

H02M 3/18
H02M 7/00

US Classification:

363 61, 307110

Abstract:

A voltage supply incorporates two voltage supplies connected in a mirror-image series arrangement to generate a DC voltage between the respective common terminals of the voltage supplies.