Steven Alan Scheer

US Patent:

20160363868, Dec 15, 2016

Filed:

Jul 29, 2016

Appl. No.:

15/223714

Inventors:

- Tokyo, JP
Benjamen M. RATHSACK - Austin TX, US
Ian J. BROWN - Austin TX, US
Steven SCHEER - Houston TX, US
Joshua S. HOOGE - Austin TX, US

International Classification:

G03F 7/40

Abstract:

Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching.

US Patent:

20150125791, May 7, 2015

Filed:

Jul 3, 2014

Appl. No.:

14/323664

Inventors:

- Tokyo, JP
Benjamen M. RATHSACK - Austin TX, US
Ian J. BROWN - Austin TX, US
Steven SCHEER - Houston TX, US
Joshua S. HOOGE - Austin TX, US

International Classification:

G03F 7/40
G03F 7/038
G03F 7/20
G03F 7/38

US Classification:

4302701, 430323, 4302861

Abstract:

Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching.