Steven Russell Shannon

US Patent:

6652712, Nov 25, 2003

Filed:

Dec 19, 2001

Appl. No.:

10/028646

Inventors:

Shiang-Bau Wang - Hsinchu, TW
Daniel J. Hoffman - Saratoga CA
Chunshi Cui - San Jose CA
Yan Ye - Saratoga CA
Gerardo Delgadino - Santa Clara CA
David McParland - Austin TX
Matthew L. Miller - Newark CA
Steven C. Shannon - San Mateo CA

Assignee:

Applied Materials, Inc - Santa Clara CA

International Classification:

C23C 1600

US Classification:

15634548, 118723 I

Abstract:

An inductive antenna of a plasma reactor for processing a semiconductor wafer is connected to a radio frequency (RF) power source, and consists of a conductor arranged in successive loops that wind in opposing directions, adjacent pairs of the successive loops having facing portions in which current flow is parallel, the facing portions being sufficiently close to at least nearly share a common current path, whereby to form transitions across the facing portions between opposing magnetic polarizations.

US Patent:

6667577, Dec 23, 2003

Filed:

Dec 18, 2001

Appl. No.:

10/025408

Inventors:

Steven Shannon - San Mateo CA
Daniel Hoffman - Saratoga CA
Chunshi Cui - San Jose CA
Yan Ye - Saratoga CA
Gerardo Delgadino - Santa Clara CA
Shiang-Bau Wang - Hsinchu, TW
Robert B. Hagen - Newark CA
Matthew L Miller - Newark CA
Stephen Thai - Milpitas CA

Assignee:

Applied Materials, Inc - Santa Clara CA

International Classification:

H01J 724

US Classification:

31511121, 31511181, 118723 I

Abstract:

An RF power applicator of the reactor includes inner and outer conductive radial spokes. The set of inner conductive spokes extends radially outwardly from and is electrically connected to the conductive post toward the conductive side wall. The set of outer conductive spokes extends radially inwardly toward the conductive post from and is electrically connected to the conductive side wall. In this way, the inner and outer sets of conductive spokes are electrically connected together, the combination of the inner and outer set of spokes with the conductive enclosure having a fundamental resonant frequency inversely proportional to the height of the conductive enclosure and the lengths of the inner and outer set of conductive spokes. An RF source power generator is coupled across the RF power applicator and has an RF frequency corresponding to the fundamental resonant frequency.

US Patent:

6879870, Apr 12, 2005

Filed:

Apr 16, 2002

Appl. No.:

10/124191

Inventors:

Steven C. Shannon - San Mateo CA, US
Daniel J. Hoffman - Saratoga CA, US
Michael Barnes - San Ramon CA, US
Lee LaBlanc - Sunnyvale CA, US

International Classification:

G01F019/00

US Classification:

700121

Abstract:

A method and apparatus for routing harmonic energy within a plasma to ground in a plasma enhanced semiconductor wafer processing reactor. A model of the chamber is used to determine the pathway for RF power and the harmonic energy of that RF power through the chamber. From this model, the placement and design of a harmonic routing circuit is determined to shunt the harmonic energy to ground.

US Patent:

7286948, Oct 23, 2007

Filed:

Jun 16, 2006

Appl. No.:

11/424705

Inventors:

Steven C. Shannon - San Mateo CA, US
Daniel J. Hoffman - Saratoga CA, US
Jeremiah T. P. Pender - San Jose CA, US
Tarreg Mawari - Manassas VA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R 23/16

US Classification:

702 76, 702118, 118712, 15634524, 15634528, 216 59, 216 61, 700108, 700121, 438 9

Abstract:

Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model. In yet another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, measuring current and voltage for waveforms coupled to the plasma and having at least two different frequencies, and determining ion mass of a plasma from model and the measured current and voltage of the waveforms.

US Patent:

7326872, Feb 5, 2008

Filed:

Aug 26, 2004

Appl. No.:

10/927382

Inventors:

Steven C. Shannon - San Mateo CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B23K 10/00

US Classification:

21912141, 21912143, 118723 I, 15634547

Abstract:

In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies. In one embodiment, a plasma reactor multi-frequency dynamic dummy load is provided that is adapted for a multi-frequency matching network having multiple matching networks. Each of the multiple matching networks being tunable within a tunespace. The plasma reactor dynamic dummy load being capable of simultaneously providing a frequency response within the tunespace of each of the multiple matching networks at the operating frequency of its associated RF power source.

US Patent:

7359177, Apr 15, 2008

Filed:

May 10, 2005

Appl. No.:

11/127036

Inventors:

Jang Gyoo Yang - Sunnyvale CA, US
Daniel J. Hoffman - Saratoga CA, US
Steven C. Shannon - San Mateo CA, US
Douglas H. Burns - Saratoga CA, US
Wonseok Lee - Pleasanton CA, US
Kwang-Soo Kim - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/683
H01T 23/00
G01L 21/30
G01R 31/00
H01J 7/24
H05B 31/26
C23F 1/00
H01L 21/306

US Classification:

361234, 216 59, 31511121, 15634528

Abstract:

A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(), f(), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D. C. wafer voltage by combining D. C.

US Patent:

7375947, May 20, 2008

Filed:

Feb 7, 2007

Appl. No.:

11/672362

Inventors:

Jang Gyoo Yang - Sunnyvale CA, US
Daniel J. Hoffman - Saratoga CA, US
Steven C. Shannon - San Mateo CA, US
Douglas H. Burns - Saratoga CA, US
Wonseok Lee - Pleasanton CA, US
Kwang-Soo Kim - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/283
B23B 31/28

US Classification:

361234, 361233, 279128, 216 67, 216 69

Abstract:

In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer clamping voltage.

US Patent:

7431857, Oct 7, 2008

Filed:

May 12, 2004

Appl. No.:

10/843914

Inventors:

Steven C. Shannon - San Mateo CA, US
Alex Paterson - San Jose CA, US
Theodoros Panagopoulos - Santa Clara CA, US
John P. Holland - San Jose CA, US
Dennis Grimard - Ann Arbor MI, US
Yashushi Takakura - Chiba, JP

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R 31/00

US Classification:

216 59, 216 61, 216 67, 438706, 438710, 438714

Abstract:

A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.