Steven P Sherman

US Patent:

6985281, Jan 10, 2006

Filed:

Nov 27, 2002

Appl. No.:

10/306056

Inventors:

Matthias Wagner - Cambridge MA, US
Robert Murano - Malden MA, US
Eugene Y. Ma - Chestnut Hill MA, US
Steven Sherman - Boston MA, US
Lawrence H. Domash - Conway MA, US

Assignee:

Aegis Semiconductor, Inc. - Woburn MA

International Classification:

G02F 1/29

US Classification:

359315, 359578

Abstract:

An optoelectronic device including a header having an upper surface and including a plurality of conducting pins extending up through the upper surface; an optical device; a tunable optical filter, wherein the optical device and the tunable optical filter are arranged in a vertical stack mounted on and extending above the upper surface of the header and wherein the tunable optical filter is electrically connected to the plurality of conducting pins; and a cap affixed to the header and along with the header defining a sealed interior containing the optical device and the tunable optical filter, wherein the cap has a top surface with a window formed therein, and wherein the window is aligned with the tunable optical filter and the optical device.

US Patent:

7049004, May 23, 2006

Filed:

Sep 19, 2003

Appl. No.:

10/666974

Inventors:

Lawrence H. Domash - Conway MA, US
Eugene Ma - Chestnut Hill MA, US
Robert Murano - Melrose MA, US
Nikolay Nemchuk - North Andover MA, US
Adam Payne - Atlanta GA, US
Steven Sherman - Boston MA, US
Matthias Wagner - Cambridge MA, US
Ming Wu - Arlington MA, US

Assignee:

Aegis Semiconductor, Inc. - Woburn MA

International Classification:

B32B 9/04
G02B 1/00

US Classification:

428446, 428641, 428622, 428687, 428620, 4289122, 359788, 359582, 359584, 359586

Abstract:

According to various embodiments and aspects of the present invention, there is provided a dynamically tunable thin film interference coating including one or more layers with thermo-optically tunable refractive index. Tunable layers within thin film interference coatings enable a new family of thin film active devices for the filtering, control, modulation of light. Active thin film structures can be used directly or integrated into a variety of photonic subsystems to make tunable lasers, tunable add-drop filters for fiber optic telecommunications, tunable polarizers, tunable dispersion compensation filters, and many other devices.

US Patent:

8421481, Apr 16, 2013

Filed:

Oct 19, 2010

Appl. No.:

12/907547

Inventors:

Vineet Kumar - Wakefield MA, US
William A. Clark - Winchester MA, US
John A. Geen - Tewksbury MA, US
Edward Wolfe - North Andover MA, US
Steven Sherman - Lexington MA, US

Assignee:

Analog Devices, Inc. - Norwood MA

International Classification:

G01R 27/28

US Classification:

324649, 324750, 7351417, 7351418, 73 138, 73 177, 438 14, 438 17, 438 19, 438 21

Abstract:

Detecting and/or mitigating the presence of particle contaminants in a MEMS device involves including MEMS structures that in normal operation are robust against the presence of particles but which can be made sensitive to that presence during a test mode prior to use, e. g. , by switching the impedance of sensitive structures between an exceptionally sensitive condition during test and a normal sensitivity during operation; surrounding sensitive nodes with guard elements that are at the same potential as those nodes during operation, thereby offering protection against bridging particles, but are at a very different potential during test and reveal the particles by their resulting leakage currents; extending the sensitive nodes to interdigitate with or otherwise extend adjacent to the guard structures, which neither contribute to nor detract from the device operation but cover otherwise open areas with detection means during test; and/or converting benign areas in which particles might become trapped undetectably by electric fields during test to field-free regions by extending otherwise non-functional conductive layers so that the particles can then be moved into detection locations by providing some mechanical disturbance.

US Patent:

8598891, Dec 3, 2013

Filed:

Feb 25, 2013

Appl. No.:

13/775335

Inventors:

William A. Clark - Winchester MA, US
John A. Geen - Tewksbury MA, US
Edward Wolfe - North Andover MA, US
Steven Sherman - Lexington MA, US

Assignee:

Analog Devices, Inc. - Norwood MA

International Classification:

G01R 27/28

US Classification:

324649, 32476201, 32475403, 32476205, 3592241, 438 14, 7351417

Abstract:

Detecting and/or mitigating the presence of particle contaminants in a MEMS device involves converting benign areas in which particles might become trapped undetectably by electric fields during test to field-free regions by extending otherwise non-functional conductive shield and gate layers and placing the same electrical potential on the conductive shield and gate layers. Particle contaminants can then be moved into detection locations remote from the potential trap areas and having particle detection structures by providing some mechanical disturbance.

US Patent:

20030087121, May 8, 2003

Filed:

Jun 17, 2002

Appl. No.:

10/174503

Inventors:

Lawrence Domash - Conway MA, US
Eugene Ma - Brookline MA, US
Robert Murano - Malden MA, US
Nikolay Nemchuk - North Andover MA, US
Adam Payne - Princeton NJ, US
Steven Sherman - Boston MA, US
Matthias Wagner - Boston MA, US
Ming Wu - Princeton NJ, US

International Classification:

B32B015/04

US Classification:

428/641000, 428/649000

Abstract:

According to various embodiments and aspects of the present invention, there is provided a dynamically tunable thin film interference coating including one or more layers with thermo-optically tunable refractive index. Tunable layers within thin film interference coatings enable a new family of thin film active devices for the filtering, control, modulation of light. Active thin film structures can be used directly or integrated into a variety of photonic subsystems to make tunable lasers, tunable add-drop filters for fiber optic telecommunications, tunable polarizers, tunable dispersion compensation filters, and many other devices.

US Patent:

20070184656, Aug 9, 2007

Filed:

Feb 6, 2007

Appl. No.:

11/671860

Inventors:

Steven Sherman - Newton MA, US
Arthur Learn - Cupertino CA, US
Robert Geffken - Burlington VT, US
John Hautala - Beverly MA, US

Assignee:

TEL EPION INC. - Billerica MA

International Classification:

H01L 21/44

US Classification:

438687000

Abstract:

A wafer processing cluster tool and method of operation provides one or more gas cluster ion beam processing chambers in possible combination with a deposition chamber and/or a cleaning chamber for performing sequential processing steps including, GCIB processing in a reduced pressure atmosphere.

US Patent:

20090233004, Sep 17, 2009

Filed:

Mar 17, 2008

Appl. No.:

12/049583

Inventors:

Steven Sherman - Newton MA, US
John J. Hautala - Beverly MA, US
Noel Russell - Waterford NY, US
Martin D. Tabat - Nashua NH, US
Thomas G. Tetreault - Manchester NH, US

Assignee:

TEL EPION INC. - Billerica MA

International Classification:

C23C 14/14

US Classification:

427527

Abstract:

A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises forming a gas cluster ion beam (GCIB) from a pressurized gas comprising a compound having silicon (Si) and carbon (C), accelerating the GCIB to the reduced-pressure environment, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film containing silicon and carbon, wherein the carbon content is greater than or equal to about 10%. Further the compound may possess a Si—C bond.

US Patent:

20120164379, Jun 28, 2012

Filed:

Jan 27, 2011

Appl. No.:

13/015074

Inventors:

Steven Sherman - Newton MA, US
Leo van Glabbeek - Franklin MA, US
Weidong Huang - Bolton MA, US
Stephen Yamartino - Wayland MA, US
Kaitlin Olsen - Arlington MA, US

Assignee:

Evergreen Solar, Inc. - Marlborough MA

International Classification:

B32B 3/00
C30B 15/20
B32B 5/00

US Classification:

428141, 428220, 428172, 428174, 117 13

Abstract:

A sheet wafer has a generally flat, generally rectangular shaped body with a length and a width, and first and second filaments generally perpendicular to the width of the body. The first and second filaments are at least partially encapsulated by a wafer material and, together with the wafer material, form at least a portion of the body. The width is between about 145 mm and 165 mm.