Stuardo A Robles

US Patent:

6374770, Apr 23, 2002

Filed:

Jun 20, 2000

Appl. No.:

09/597856

Inventors:

Peter W. Lee - Fremont CA
Stuardo Robles - Sunnyvale CA
Anand Gupta - San Jose CA
Virendra V. S. Rana - Los Gatos CA
Amrita Verma - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118723E, 118697, 118695, 156345, 438513

Abstract:

A chemical vapor deposition system that includes a housing configured to form a processing chamber, a substrate holder configured to hold a substrate within the processing chamber, a gas distribution system configured to introduce gases into the processing chamber, a plasma generation system configured to form a plasma within the processing chamber, a processor operatively coupled to control the gas distribution system and the plasma generation system, and a computer-readable memory coupled to the processor that stores a computer-readable program which directs the operation of the chemical vapor deposition system. In one embodiment the computer-readable program comprises instructions that control the gas distribution system to flow a process gas comprising silicon, oxygen and a halogen family member into the chamber to deposit a halogen-doped silicon oxide film on a substrate positioned on the substrate holder and instructions that control the gas distribution system and plasma generation system to densify the halogen-doped silicon oxide film by bombarding the film with ionic species from a plasma of an argon-containing gas source. In another embodiment, the computer-readable program comprises instructions that control the gas distribution system to flow a process gas comprising silicon, oxygen and a halogen family member into the chamber to deposit a halogen-doped silicon oxide film on said substrate and instructions that control the gas distribution system and plasma generation system to form a plasma from a hydrogen containing source gas to bombard the halogen-doped silicon oxide film with hydrogen ions to remove loosely bound halogen atoms from the film.

US Patent:

6663713, Dec 16, 2003

Filed:

Oct 22, 1996

Appl. No.:

08/734978

Inventors:

Stuardo A. Robles - Sunnyvale CA
Visweswaren Sivaramakrishnan - Santa Clara CA
Bang C. Nguyen - Fremont CA
Gayathri Rao - Allentown PA
Gary Fong - Cupertino CA
Vicente Lam - Neward CA
Peter Wai-Man Lee - San Jose CA
Mei Chang - Saratoga CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118719, 118723 E, 118724, 118726, 118729

Abstract:

A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the vaporization of stable di-pxylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and the optional blending of the resulting gaseous p-xylylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the p-xylylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber. An apparatus is further provided downstream of the deposition chamber to control both the flow rate or residence time of the reactive monomer in the deposition chamber as well as to control the pressure of the deposition chamber. Provision is further made for an electrical bias to permit the apparatus to function as a plasma etch chamber, for in situ plasma cleaning of the chamber between depositions, for enhancing cracking of polymerizable precursor material, for heating the walls of the chamber and for providing heat sufficient to prevent polymerization in the gas phase.

US Patent:

6277347, Aug 21, 2001

Filed:

Feb 24, 1997

Appl. No.:

8/805989

Inventors:

Ranald Stearns - Los Altos CA
Gary Sypherd - Milpitas CA
Stuardo Robles - Sunnyvale CA
Maria Galiano - Fishkill NY

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C01B 700

US Classification:

423240R

Abstract:

A method and apparatus for abating a compound in a substrate processing system's effluent gases. The method of the present invention begins by introducing ozone and the effluent gases into an abatement device's combustion chamber. Energy is then applied to the effluent gas and ozone. The application of energy, such as thermal or radio frequency energy, then causes a reaction in and between the effluent gases and the ozone, thereby rendering the compound inert. The resultant gases produced are then exhausted out of the combustion chamber.

US Patent:

57074518, Jan 13, 1998

Filed:

May 25, 1995

Appl. No.:

8/450833

Inventors:

Stuardo A. Robles - Sunnyvale CA
Thanh Pham - San Jose CA
Bang C. Nguyen - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118715

Abstract:

An improved method of in-situ cleaning a throttle valve in a CVD device and exhaust flow control apparatus for facilitating such cleaning. The throttle valve is repositioned such that it is juxtaposed in close proximity to the exhaust gas port of the reaction chamber. A plasma is then ignited in a cleaning gas mixture of nitrogen trifluoride, hexafluoroethane and oxygen.

US Patent:

6047713, Apr 11, 2000

Filed:

Feb 3, 1994

Appl. No.:

8/191384

Inventors:

Stuardo A. Robles - Sunnyvale CA
Thanh Pham - San Jose CA
Bang C. Nguyen - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B08B 700
C23C 1640

US Classification:

134 11

Abstract:

An improved method of in-situ cleaning a throttle valve in a CVD device and exhaust flow control apparatus for facilitating such cleaning. The throttle valve is repositioned such that it is juxtaposed in close proximity to the exhaust gas port of the reaction chamber. A plasma is then ignited in a cleaning gas mixture of nitrogen trifluoride, hexafluoroethane and oxygen.

US Patent:

58042598, Sep 8, 1998

Filed:

Nov 7, 1996

Appl. No.:

8/749290

Inventors:

Stuardo Robles - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05H 124
B05D 512
H01L 2102
C23C 1600

US Classification:

427577

Abstract:

A method and apparatus for forming a multilayer insulating film on a substrate involves forming a number of carbon-based layers on the substrate, each interlaid with layers of organic material, such as parylene. Preferably, the carbon-based layers are formed using a high-density plasma chemical vapor deposition system, although other CVD systems may also be used. The result is a multilayer insulating film having a low overall dielectric constant, excellent gap-fill characteristics, and desirable thermal properties.

US Patent:

58143777, Sep 29, 1998

Filed:

Jul 8, 1997

Appl. No.:

8/889703

Inventors:

Stuardo Robles - Sunnyvale CA
Visweswaren Sivaramakrishnan - Cupertino CA
Maria Galiano - San Jose CA
Victoria Kithcart - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05H 1400
H01L 2100
B05D 300

US Classification:

427579

Abstract:

A method and apparatus for ramping down the deposition pressure in a SACVD process. The present invention also provides a method and apparatus for subsequently ramping up the pressure for a PECVD process in such a manner as to prevent unwanted reactions which could form a weak interlayer interface. In particular, the deposition pressure in the SACVD process is ramped down by stopping the flow of the silicon containing gas (preferably TEOS) and/or the carrier gas (preferably helium), while diluting the flow of ozone with oxygen. A ramp down of the pressure starts at the same time. The diluting of the ozone with oxygen, limits reactions with undesired reactants at the end of a process.

US Patent:

59585102, Sep 28, 1999

Filed:

Jan 8, 1996

Appl. No.:

8/583888

Inventors:

Visweswaren Sivaramakrishnam - Santa Clara CA
Bang C. Nguyen - Fremont CA
Gayathri Rao - Santa Clara CA
Stuardo Robles - Sunnyvale CA
Gary L. Fong - Sunnyvale CA
Vicente Lim - Newark CA
Peter W. Lee - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

4272556

Abstract:

A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the sublimation of stable dimer parylene material, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and for the optional blending of the resulting gaseous parylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the parylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber. An apparatus is further provided downstream of the deposition chamber to control both the flow rate or residence time of the reactive monomer in the deposition chamber as well as to control the pressure of the deposition chamber. Provision is further made for an electrical bias to permit the apparatus to function as a plasma etch chamber, for in situ plasma cleaning of the chamber between depositions, for enhancing cracking of polymerizable precursor material, for heating the walls of the chamber and for providing heat sufficient to prevent polymerization in the gas phase.