Supriya Lu Jaiswal

US Patent:

20230101021, Mar 30, 2023

Filed:

Sep 29, 2022

Appl. No.:

17/956042

Inventors:

- Richmond CA, US
Supriya JAISWAL - San Diego CA, US

International Classification:

G03F 1/24
G03F 1/26
G03F 1/62
G03F 1/60

Abstract:

The present disclosure provides masks suitable for Extreme Ultraviolet (EUV) and X-ray lithography by including a non-reflective region combined with a reflective multilayer. This non-reflective region replaces a typical absorber layer used to provide the pattern for integrated circuits.

US Patent:

20200140941, May 7, 2020

Filed:

Dec 30, 2019

Appl. No.:

16/730904

Inventors:

Supriya Jaiswal - , US
Supriya Jaiswal - San Diego CA, US

International Classification:

C12Q 1/6869
G01N 33/68
G01N 21/59
C12N 15/10
G01N 21/33

Abstract:

Methods, apparatus, and processes which use Extreme ultraviolet radiation (EUV) and/or soft X-ray wavelengths to read, image, edit, locate, identify, map, alter, delete, repair and sequence genes are described. An EUV scanning tool which allows high throughput genomic scanning of DNA, RNA and protein sequences is also described. A database which records characteristic absorption spectra of gene sequences is also described.

US Patent:

20200124957, Apr 23, 2020

Filed:

Oct 17, 2019

Appl. No.:

16/656489

Inventors:

- Richmond CA, US
Supriya JAISWAL - San Diego CA, US

International Classification:

G03F 1/24
G03F 1/56
B82Y 40/00
H01L 21/027
G03F 1/26

Abstract:

The present disclosure provides masks suitable for Extreme Ultraviolet (EUV) and X-ray lithography by including a non-reflective region within the reflective multilayer. This non-reflective region replaces a typical absorber layer used to provide the pattern for integrated circuits. New classes of materials and associated components for use in devices and systems operating at ultraviolet (UV), extreme ultraviolet (EUV), and/or soft X-ray wavelengths are described. This disclosure relates to an EUV Photomask Architecture comprising of reflective and non reflective regions eliminating the need for an absorber layer, the effects of shadows on masks, 3D diffraction effects, and defect management. Such a material structure and combination may be used to make components such as mirrors, lenses or other optics, panels, lightsources, photomasks, photoresists, or other components for use in applications such as lithography, wafer patterning, astronomical and space applications, biomedical applications, or other applications.

US Patent:

20190049634, Feb 14, 2019

Filed:

Aug 8, 2018

Appl. No.:

16/059000

Inventors:

Supriya Jaiswal - San Diego CA, US

International Classification:

G02B 5/08
C23C 14/06
G03F 7/20

Abstract:

New classes of materials and associated components for use in devices and systems operating at ultraviolet (UV), extreme ultraviolet (EUV), and/or soft X-ray wavelengths are described. This invention relates to increasing the bandwidth and general performance of EUV reflective and transmissive materials. Such a material structure and combination may be used to make components such as mirrors, lenses or other optics, panels, light sources, photomasks, photoresists, or other components for use in applications such as lithography, wafer patterning, astronomical and space applications, biomedical applications, or other applications.

US Patent:

20170218440, Aug 3, 2017

Filed:

Feb 1, 2017

Appl. No.:

15/422436

Inventors:

Supriya JAISWAL - San Diego CA, US

International Classification:

C12Q 1/68
G01N 21/59
G01N 23/083
C12N 15/10
G01N 33/68

Abstract:

Methods, apparatus, and processes which use Extreme ultraviolet radiation (EUV) and/or soft X-ray wavelengths to read, image, edit, locate, identify, map, alter, delete, repair and sequence genes are described. An EUV scanning tool which allows high throughput genomic scanning of DNA, RNA and protein sequences is also described. A database which records characteristic absorption spectra of gene sequences is also described.

US Patent:

20170003419, Jan 5, 2017

Filed:

Jun 30, 2016

Appl. No.:

15/198291

Inventors:

Supriya Jaiswal - San Diego CA, US

International Classification:

G02B 1/10
G21K 1/06

Abstract:

Coatings for use in the extreme ultraviolet/soft X-ray spectrum/DUV from 0.1 nm to 250 nm include one or more sub-wavelength “A-layers” alternating with sub-wavelength “B-layers.” The A-layers may include Group 1, Group 2 and Group 18 materials. The B-layers may include transition metal, lanthanide, actinide, or one of their combinations. The A-layers and/or the B-layers may include nanostructures with features sized or shaped similarly to expected defects. Additional top layers may include higher-atomic-number A-layer materials, hydrophobic materials, or charged materials. Such a material may be used to make components such as mirrors, lenses or other optics, panels, lightsources, photomasks, photoresists, or other components for use in applications such as lithography, wafer patterning, astronomical and space applications, biomedical, biotech applications, or other applications.

US Patent:

20160238755, Aug 18, 2016

Filed:

Apr 25, 2016

Appl. No.:

15/136990

Inventors:

Supriya Jaiswal - San Diego CA, US

International Classification:

G02B 5/20

Abstract:

Nanostructured photonic materials and associated components for use in devices and systems operating at ultraviolet (UV), extreme ultraviolet (EUV), and/or soft Xray wavelengths are described. Such a material may be fabricated with nanoscale features tailored for a selected wavelength range, such as at particular UV, EUV, or soft Xray wavelengths or wavelength ranges. Such a material may be used to make components such as mirrors, lenses or other optics, panels, lightsources, masks, photoresists, or other components for use in applications such as lithography, wafer patterning, biomedical applications, or other applications.

US Patent:

20160085003, Mar 24, 2016

Filed:

Nov 25, 2015

Appl. No.:

14/952879

Inventors:

Supriya Jaiswal - San Diego CA, US

International Classification:

G02B 5/20
C23C 16/06
C23C 16/455
H01J 37/28
G01Q 60/24

Abstract:

Nanostructured photonic materials, and associated components for use in devices and systems operating at ultraviolet (UV), extreme ultraviolet (EUV), and/or soft Xray wavelengths are described. Such a material may be fabricated with nanoscale features tailored for a selected wavelength range, such as at particular UV, EUV, or soft Xray wavelengths or wavelength ranges. Such a material may be used to make components such as mirrors, lenses or other optics, panels, lightsources, masks, photoresists, or other components for use in applications such as lithography, wafer patterning, astronomical and space applications, biomedical applications, biotech or other applications.