3080 Atlantic Ave, Brooklyn, NY 11208 7186470240 (Phone)
Medisys Hollis Family Care 18803 Jamaica Ave, Hollis, NY 11423 7187402060 (Phone)
Certifications:
Internal Medicine, 1997
Awards:
Healthgrades Honor Roll
Languages:
English Spanish
Hospitals:
3080 Atlantic Ave, Brooklyn, NY 11208
Medisys Hollis Family Care 18803 Jamaica Ave, Hollis, NY 11423
Jamaica Hospital Medical Center 8900 Van Wyck Expressway, Jamaica, NY 11418
Education:
Medical School SUNY Upstate Medical University (Syracuse) Graduated: 1994 Medical School Thomas Jefferson University Hospital Graduated: 1995 Medical School Thomas Jefferson University Hospital Graduated: 1997
Santa Clara Valley Medical Center Pediatrics 751 S Bascom Ave, San Jose, CA 95128 4088855445 (phone), 4088856718 (fax)
Education:
Medical School Seth G S Med Coll, Univ of Mumbai, Mumbai, Maharashtra, India Graduated: 1990
Languages:
English Spanish Vietnamese
Description:
Dr. Abraham graduated from the Seth G S Med Coll, Univ of Mumbai, Mumbai, Maharashtra, India in 1990. She works in San Jose, CA and specializes in Pediatrics. Dr. Abraham is affiliated with Santa Clara Valley Medical Center.
Medisys East New YorkMedisys Hollis Family Care 18803 Jamaica Ave, Hollis, NY 11423 7187402060 (phone), 7187404870 (fax)
Languages:
English Spanish
Description:
Dr. Abraham works in Hollis, NY and specializes in Internal Medicine. Dr. Abraham is affiliated with Flushing Hospital Medical Center and Jamaica Hospital Medical Center.
A method for etching a layer stack structure on a substrate is provided. The method includes a step of etching the layer stack to a predefined stopping point using a reverse etch rate loading inducing chemistry. The method also includes a step of etching said layer stack through a target layer in the layer stack structure using a natural etch rate loading chemistry.
Methods And Apparatus For Improving Microloading While Etching A Substrate
A method for improving microloading of a substrate to be etched in a plasma processing chamber. The substrate is etched with a first etchant to form trenches having a given trench width. The plasma processing chamber has a first power supply configured to energize a first electrode of the chamber and a second power supply configured to energize a second electrode of the chamber. The method includes obtaining a first data set among a plurality of data sets correlating power ratios of the first power supply and the second power supply with microloading percentages for the first etchant for different trench widths. The first data set correlates the power ratios with the microloading percentages for a first trench width. The first trench width approximates the given trench width as closely as possible. The method also includes extrapolating a second data set from the first data set.
Methods And Apparatus For Etching Semiconductor Wafers
A method for etching a TiN layer of a wafer stack in a plasma processing chamber. The method includes the step of etching at least partially through the TiN layer using a first chemistry, which preferably includes a TiN etchant, a noble gas, and a polymer-forming chemical. In one embodiment, the TiN etchant is Cl. sub. 2, the noble gas is argon, and the polymer-forming chemical is CHF. sub. 3.
Methods For Reducing Etch Rate Loading While Etching Through A Titanium Nitride Anti-Reflective Layer And An Aluminum-Based Metallization Layer
Susan C. Abraham - San Jose CA Peter H. Chen - Milpitas CA Jerry Yang - Milpitas CA
Assignee:
LAM Research Corporation - Fremont CA
International Classification:
H01L 213065
US Classification:
438714
Abstract:
A method, in a plasma processing chamber, for etching through a selected portion of layers of a wafer stack, which comprises an anti-reflective layer and a metallization layer disposed below the anti-reflective layer. The method comprises the step of etching at least partially through the anti-reflective layer of the wafer stack with a first chemistry that comprises both an etchant chemical and a polymer-forming chemical. Further, the method comprises the step of etching at least partially through the metallization layer of the wafer stack with a second chemistry different from the first chemistry.
Methods And Apparatus For Etching Semiconductor Wafers And Layers Thereof
A method in a plasma processing chamber, for etching through a selected portion of an aluminum-containing layer and a titanium-containing layer. The titanium-containing layer is disposed above the aluminum-containing layer. The method includes a first etching step that etches at least partially through the titanium-containing layer using a first source gas composition. The first source gas composition consists essentially of the Cl. sub. 2 etchant and a first mixture. The first mixture consists essentially of HCl and CHF. sub. 3. The first source gas composition has a first flow ratio of the Cl. sub. 2 etchant to the first mixture. There is further included a second etching step that etches at least partially through the aluminum-containing layer using a second source gas composition. The second source gas composition consists essentially of a Cl. sub. 2 etchant and a second mixture.
Methods And Apparatuses For Improving Photoresist Selectivity And Reducing Etch Rate Loading
Susan C. Abraham - San Jose CA Gregory J. Goldspring - Alameda CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21302
US Classification:
438714
Abstract:
Disclosed is an inventive multiple-chemistry etching method suited for etching through selected portions of layers in a layer stack in a plasma processing chamber. The layer stack preferably includes at least an anti-reflective layer and a metallization layer disposed below the anti-reflective layer. The method includes a first etching step where the anti-reflective layer of the layer stack is at least partially etched with a first chemistry, the first chemistry comprising an etchant chemical and a polymer-forming chemical. Once the first etching step is complete, the method proceeds to a second etching step where at least part of the metallization layer of the layer stack is etched with a second chemistry different from the first chemistry.
Methods And Apparatus For Removing Photoresist Mask Defects In A Plasma Reactor
In a plasma reactor, a method for removing photoresist mask defects, which includes introducing a substrate having thereon a photoresist mask into the plasma reactor. The method further includes flowing into the plasma reactor an etchant source gas comprising nitrogen. The etchant source gas is substantially oxidant-free. The method also includes removing the photoresist mask defects employing a plasma struck with the etchant source gas.
Name / Title
Company / Classification
Phones & Addresses
Susan Abraham Principal
Catholic Artwork Nonclassifiable Establishments · Religious Organization
10737 Ayrshire Dr, Tampa, FL 33626
Susan Catherine Abraham
Susan Abraham MD Internist
18803 Jamaica Ave STE 101, Hollis, NY 11423 7187402060
Susan M. Abraham
BEAR CREATIONS, LLC
Susan Abraham Director
Wellington Terrace Homeowner's Association, Inc
860 N State Rd 434, Altamonte Springs, FL 32714 190 N Westmonte Dr, Altamonte Springs, FL 32714 1264 Wellington Ter, Maitland, FL 32751
Susan Abraham
THE CHILDREN'S NEST, INC
Susan Abraham
K & S WESTCHASE, INC Nonclassifiable Establishments
12157 W Linebaugh Ave, Tampa, FL 33626
Susan Abraham Principal
Essex County Educational Commission School/Educational Services
683 Bloomfield Ave, Bloomfield, NJ 07003
Susan Abraham Office Manager, Owner
Lake Mary Primary Care Medical Doctor's Office
4106 W Lk Mary Blvd, Lake Mary, FL 32746 13005 38 Pl N, Minneapolis, MN 55441 4073332273
Resumes
Managing Partner At Lush Life Landscape Design Associates
Managing Partner at Lush Life Landscape Design Associates
Location:
Waterford, Virginia
Industry:
Design
Work:
Lush Life Landscape Design Associates - Northern Virginia since Jan 2004
Managing Partner
Education:
The George Washington University 2004 - 2008
MLD, Masters in Landscape Design
California State University-Long Beach 1984 - 1989
BFA, Fine Arts: Drawing and Painting
St. Joseph's Medical Center Paterson, NJ 2014 to Sep 2014 Document patient symptoms and medical history and assistHackensack University Medical Center Hackensack, NJ 2013 to 2014 Clinical ExperienceBergen Regional Medical Center Paramus, NJ Mar 2013 to May 2013 Clinical ExperiencePEARSON EDUCATION/PRENHALL BUS PUB Upper Saddle River, NJ Apr 2010 to Jan 2013 Consulting EditorPEARSON EDUCATION/PRENHALL BUS PUB Upper Saddle River, NJ Jul 2006 to Apr 2010 Assistant Editor of Decision Science, Finance and AccountingPEARSON EDUCATION/PTG Upper Saddle River, NJ May 2005 to Jun 2006 Editorial AssistantTHE RIDGEWOOD NEWS Ridgewood, NJ Sep 2004 to May 2005 Editorial AssistantFAMILY CIRCLE MAGAZINE New York, NY Jun 2004 to Aug 2004 Editorial Intern
Education:
Bergen Community College Paramus, NJ Dec 2014 Associate of Science in NursingWilliam Paterson University Wayne, NJ Dec 2004 Bachelor of Arts in CommunicationSchool of Journalism 1999 to 2002University of Minnesota Minneapolis, MN
Jul 2001 to 2000 Staff PharmacistDepartment of Veterans Affairs Medical center Brooklyn, NY Jan 2001 to Jul 2001 Staff PharmacistHunt's Point Pharmacy Bronx, NY Aug 1997 to Dec 2000 Supervising PharmacistNew York Downtown Hospital New York, NY Mar 1995 to Mar 1996
Education:
Long Island University New York, NY 1996 BS in PharmacyUniversity of Kerala 1987 MS in EducationUniversity of Kerala 1986 MS in Chemistry