Susan Floriana Riley

US Patent:

6385473, May 7, 2002

Filed:

Apr 15, 1999

Appl. No.:

09/292157

Inventors:

Paul D. Haines - Cambridge, GB
Andrea J. Harry - Cambridge, GB
Harpal S. Kumar - Cambridge, GB
John D. Place - Suffolk, GB
Susan B. Riley Earl - Sausalito CA
Neil J. Sheehan - Palo Alto CA
David A. Sheraton - Irvine CA

Assignee:

Nexan Limited - Cambridge

International Classification:

A61B 50478

US Classification:

600393, 600382, 600391, 600392

Abstract:

A physiological sensor device for attachment to a mammalian subject including first and second regions of sensors attachable to a subject in use, which first and second regions of sensors are separated by a flexible web adapted to enable variable separation of the first and second sensor regions from one another in use. The physiological sensor device is manufactured by forming a strip of electrically conductive material on a flexible electrically non-conductive substrate and cutting a slot through both the flexible substrate and conductive strip to define a pair of adjacent edges of conductive material separated by a non-conductive gap thereby also to define adjacent electrode sensors each having one of the pair of adjacent edges formed in the strip of conductive material. The physiological sensor device is attached to the subject for measurement of numerous physiological parameters for a period of time, such as 24 hours, and is then thrown away.

US Patent:

D4252039, May 16, 2000

Filed:

Apr 15, 1999

Appl. No.:

D/103527

Inventors:

Neil J. Sheehan - Palo Alto CA
Paul D. Haines - Cambridge, GB
Harpal S. Kumar - Cambridge, GB
John D. Place - Suffolk, GB
Susan B. Riley Earl - Sausalito CA
David A. Sheraton - Irvine CA

Assignee:

Nexan Telemed Limited - Cambridge

International Classification:

2401

US Classification:

D24187

US Patent:

52926869, Mar 8, 1994

Filed:

Dec 18, 1991

Appl. No.:

7/810740

Inventors:

Susan Riley - Gaston OR
Terri L. Clayton - Aloha OR

Assignee:

TriQuint Semiconductor, Inc. - Beaverton OR

International Classification:

H01L 2126

US Classification:

437173

Abstract:

A method of forming substrate vias in a GaAs wafer begins with a GaAs wafer in which all top side processing steps are complete. The top surface of the GaAs wafer includes top surface via contacts, which are in electrical contact with the bottom surface ground plane once the ground vias are complete. A protective layer is formed on the top surface of the wafer to protect the finished integrated circuitry. A portion of the substrate is removed from the bottom surface to achieve a thin layer of substrate material. The bottom surface of the thinned substrate is metalized with a first metal layer. Laser via holes are drilled into the thinned substrate from the bottom surface of the wafer to within a few microns from the top surface metal via contacts. The laser holes are drilled by emitting a controlled number of single pulses over the selected via location. The substrate vias are subsequently wet etched to remove the remaining substrate thickness and the bottom surface of the wafer and the substrate via holes are metalized with a second metal layer.