Suzanne S Mccoy

US Patent:

6515315, Feb 4, 2003

Filed:

Aug 7, 2000

Appl. No.:

09/634455

Inventors:

Mark A. Itzler - Princeton NJ
Chen Show Wang - Warren NJ
Nicholos J. Codd - Ewing NJ
Suzanne McCoy - Hamilton NJ

Assignee:

JDS Uniphase, Corp. - West Trenton NJ

International Classification:

H01L 310304

US Classification:

257186

Abstract:

A method for designing an avalanche photodiode for high bit rate or high speed applications is disclosed. The photodiode is made up of a multiplication layer of a first semiconductor material, an absorption layer of a second semiconductor material and a field control layer of a third semiconductor material having. The field control layer has a moderate doping of a first type dopant and is intermediate between the multiplication and absorption layers. A central region of the multiplication layer is diffused with a second type dopant which results in a diffused region having a greater thickness in the center than in the periphery of the diffused region.