Tae Gyung Ha

US Patent:

20220328348, Oct 13, 2022

Filed:

Jun 29, 2022

Appl. No.:

17/853150

Inventors:

- Santa Clara CA, US
Xiangjin Xie - Fremont CA, US
Tae Hong Ha - San Jose CA, US
Xianmin Tang - San Jose CA, US
Lu Chen - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/768
C23C 16/455
C23C 16/34

Abstract:

Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

US Patent:

20210407853, Dec 30, 2021

Filed:

Jun 28, 2020

Appl. No.:

16/914416

Inventors:

- Santa Clara CA, US
Xiangjin Xie - Fremont CA, US
Tae Hong Ha - San Jose CA, US
Xianmin Tang - San Jose CA, US
Lu Chen - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/768
C23C 16/34
C23C 16/455

Abstract:

Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

US Patent:

20210371972, Dec 2, 2021

Filed:

Jun 1, 2020

Appl. No.:

16/889017

Inventors:

- Santa Clara CA, US
Carmen LEAL CERVANTES - Mountain View CA, US
Feng CHEN - San Jose CA, US
Lu CHEN - Cupertino CA, US
Wenjing XU - San Jose CA, US
Aravind KAMATH - San Jose CA, US
Cheng-Hsiung Matthew TSAI - Cupertino CA, US
Tae Hong HA - San Jose CA, US
Alexander JANSEN - San Jose CA, US
Xianmin TANG - San Jose CA, US

International Classification:

C23C 14/56
H01L 21/02
H01L 21/67
H01J 37/32

Abstract:

Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

US Patent:

20210351072, Nov 11, 2021

Filed:

May 6, 2020

Appl. No.:

16/867990

Inventors:

- Santa Clara CA, US
Christina L. Engler - Union City CA, US
Gang Shen - San Jose CA, US
Feng Chen - San Jose CA, US
Tae Hong Ha - San Jose CA, US
Xianmin Tang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/768

Abstract:

Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å.