Terry L Brewer

US Patent:

40617998, Dec 6, 1977

Filed:

Sep 22, 1975

Appl. No.:

5/615447

Inventors:

Terry L. Brewer - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

B44C 122
C03C 1500
B05D 306

US Classification:

427 43

Abstract:

Disclosed is a method of forming patterned electron beam resists from styrene-diene block copolymers and the resists formed thereby. A thin film of a styrene-diene block copolymer is applied to a support and is subjected to an electron beam scan. An electron beam irradiates a portion of the copolymer film according to a programmed pattern; the copolymer cross links where irradiated, thus causing the irradiated portion of the copolymer to become insoluble in a solvent. The balance of the copolymer remains soluble in the solvent, dissolves and is removed, resulting in the desired pattern of openings.

US Patent:

41339070, Jan 9, 1979

Filed:

Nov 21, 1977

Appl. No.:

5/853673

Inventors:

Terry L. Brewer - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

B05D 306

US Classification:

427 43

Abstract:

Disclosed is a method of forming patterned electron beam resists from polymers that undergo energy intensity or electron dosage dependent reactions. Upon the introduction of sufficient energy, the polymer generates two reactive species that react with each other. However, with a lower amount of energy, the polymer generates only one reactive species. A thin film of the dosage dependent polymer is applied to a support and is subjected to a programmed electron beam scan. The electron beam irradiates a portion of the polymer film according to the programmed pattern and furnishes enough energy in the path of the beam to cause the polymer to cross link where directly irradiated, thus causing the polymer to become insoluble in certain solvents. The portion of the polymer adjacent the directly irradiated portion is subjected to electrons back-scattering from the surface of the support, which electrons are a small percentage of the total beamed at the polymer. This adjacent portion of the polymer does not receive sufficient energy from the back-scattered electrons to effect much degree of cross linking in some cases, and in other cases the polymer may actually degrade.

US Patent:

41522869, May 1, 1979

Filed:

Sep 13, 1977

Appl. No.:

5/832857

Inventors:

Carol A. Crosson - Garland TX
Terry L. Brewer - Plano TX
Robert F. Aycock - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 744

US Classification:

252182

Abstract:

A boron doped, silicon oxide-forming film is produced on a semiconductor wafer by coating the wafer with a solution of a silicon compound and a boron compound, in a blend of two polar organic solvents, one of which has a low boiling point, and the other has a high boiling point, between 185. degree. and 300. degree. C. During a subsequent heating step, the high boiling point solvent redissolves any crystalline precipitate that forms during spin-on, giving a more uniform film for diffusion, and consequently a damage-free wafer surface.