Terry R Turner

US Patent:

6794272, Sep 21, 2004

Filed:

Mar 18, 2003

Appl. No.:

10/390977

Inventors:

Terry R. Turner - Austin TX
James D. Spain - Georgetown TX
Richard M. Banks - Austin TX

Assignee:

iFire Technologies, Inc. - Austin TX

International Classification:

H01L 2178

US Classification:

438459, 438464, 438691, 438977

Abstract:

A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

US Patent:

7118992, Oct 10, 2006

Filed:

Aug 9, 2004

Appl. No.:

10/914248

Inventors:

Terry R. Turner - Austin TX, US
James D. Spain - Georgetown TX, US
Richard M. Banks - Austin TX, US

Assignee:

iFire Technologies, Inc. - Austin TX

International Classification:

H01L 21/461
H01L 21/78

US Classification:

438459, 438462, 438732, 20429837

Abstract:

A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

US Patent:

7345428, Mar 18, 2008

Filed:

Sep 23, 2003

Appl. No.:

10/668398

Inventors:

Terry R. Turner - Austin TX, US

International Classification:

H01J 7/24

US Classification:

31511121, 118723 I, 324 7611

Abstract:

A system () is provided herein for monitoring the harmonic content of the RF signal delivered to an RF powered device (). The system comprises (a) a voltage transducer () adapted to sample the voltage of the RF signal and to output a first signal representative thereof, (b) a current transducer () adapted to sample the current of the RF signal and to output a second signal representative thereof, and (c) a memory device () in communication with at least one, and preferably both, of the aforementioned transducers and and which contains calibration information specific to the transducers.

US Patent:

7403764, Jul 22, 2008

Filed:

Nov 30, 2004

Appl. No.:

10/999488

Inventors:

Terry R. Turner - Austin TX, US

International Classification:

H04M 1/66

US Classification:

455410, 4552481, 455320, 455330, 702106, 31511121

Abstract:

An RF power delivery diagnostic system is provided herein. The system comprises an RF power source (), an impedance matching network (), a plasma reactor () in electrical contact with the RF power source by way of the impedance matching network, a first RF sensor () adapted to measure at least one attribute of the RF power input to the impedance matching network, and a second RF sensor () adapted to measure at least one attribute of the RF power output by the impedance matching network.

US Patent:

7728250, Jun 1, 2010

Filed:

May 21, 2004

Appl. No.:

10/851423

Inventors:

Terry R. Turner - Austin TX, US
Rodney A. Herman - Austin TX, US
Duane T. Smith - Round Rock TX, US
James D. Spain - Georgetown TX, US

Assignee:

Inficon, Inc. - Syracuse NY

International Classification:

B23K 10/00

US Classification:

21912143, 21912148, 118723 I, 31511151

Abstract:

A clamp assembly for bringing an RF sensor into electrical contact with an RF current carrier is provided herein. The clamp assembly () comprises a first wedge-shaped element (), and a second wedge-shaped element () which is slidingly engaged with said first wedge-shaped element. Preferably, the clamp assembly also comprises a collar () within which the first and second wedge-shaped elements are disposed. The clamp assembly preferably further comprises a fastener (), such as a screw, which adjoins the first and second elements, in which case the clamp assembly is adapted such that, as the screw is rotated in a first direction, at least one of the first and second elements expands against the collar and/or the RF current carrier.

US Patent:

7821250, Oct 26, 2010

Filed:

Jul 31, 2006

Appl. No.:

11/496277

Inventors:

Terry A. Turner - Austin TX, US
Rodney A. Herman - Austin TX, US
Duane T. Smith - Round Rock TX, US
James D. Spain - Georgetown TX, US

Assignee:

Inficon, Inc. - Syracuse NY

International Classification:

G01R 25/02

US Classification:

324 95

Abstract:

A clamp assembly for bringing an RF sensor into electrical contact with an RF current carrier is provided herein. The clamp assembly () comprises a first wedge-shaped element (), and a second wedge-shaped element () which is slidingly engaged with said first wedge-shaped element. Preferably, the clamp assembly also comprises a collar () within which the first and second wedge-shaped elements are disposed. The clamp assembly preferably further comprises a fastener (), such as a screw, which adjoins the first and second elements, in which case the clamp assembly is adapted such that, as the screw is rotated in a first direction, at least one of the first and second elements expands against the collar and/or the RF current carrier.

US Patent:

8010084, Aug 30, 2011

Filed:

Jun 17, 2008

Appl. No.:

12/140503

Inventors:

Terry R. Turner - Austin TX, US

Assignee:

Turner Enterprises & Associates - Austin TX

International Classification:

H04M 1/66

US Classification:

455410, 4552481, 455320, 455330, 702106, 702107, 324464

Abstract:

An RF power delivery diagnostic system is provided herein. The system comprises an RF power source (), an impedance matching network (), a plasma reactor () in electrical contact with the RF power source by way of the impedance matching network, a first RF sensor () adapted to measure at least one attribute of the RF power input to the impedance matching network, and a second RF sensor () adapted to measure at least one attribute of the RF power output by the impedance matching network.

US Patent:

20030082847, May 1, 2003

Filed:

Apr 26, 2002

Appl. No.:

10/133296

Inventors:

Terry Turner - Austin TX, US
James Spain - Georgetown TX, US
Richard Banks - Austin TX, US

Assignee:

i-Fire Technologies, Inc. - Austin TX

International Classification:

H01L021/44
H01L021/4763

US Classification:

438/106000, 438/110000, 438/108000, 438/459000

Abstract:

The invention is directed to a method for manufacturing integrated circuits. In one exemplary embodiment, the method uses an atmospheric plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.