Thanh N Vu

US Patent:

48172693, Apr 4, 1989

Filed:

Sep 14, 1987

Appl. No.:

7/096083

Inventors:

Randolph E. Root - Westminster CA
Thanh T. Vu - Huntington Beach CA

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

H01C 1706

US Classification:

29620

Abstract:

A process for forming electrically conductive circuitry on a metallic nonconductive substrate or insulating layer which includes the steps of providing a nonconductive ceramic substrate having a metallic component and which can dissociate into its constituent components to provide dissociated metal bonded to the ceramic substrate upon application of laser energy. Laser energy in then applied to predetermined areas of the surface of the nonconductive ceramic substrate to provide dissociated metallic conductors in the predetermined areas. The disclosed process further includes the formation of metallized through holes by application of laser energy to the nonconductive ceramic substrate to form a through hole, whereby dissociated metal in formed on the inside of the through hole. The disclosed process also includes the capability to down trim a thick film or thin film resistor which is conductively coupled between two areas of metallization. Laser energy is applied to a portion of the thick film or thin film resistor and to a portion of the metallic nonconductive ceramic substrate in a predetermined pattern to provide a continuous dissociated metallic conductor which passes through the thick film or thin film resistor and is conductively connected to one of two areas of electrically conductive metallization.

US Patent:

51445263, Sep 1, 1992

Filed:

Aug 5, 1991

Appl. No.:

7/740359

Inventors:

Thanh Vu - Westminster CA
Tsen-Tsou Shih - Cypress CA

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

H01G 410

US Classification:

361321

Abstract:

A low temperature co-fired ceramic ("LTCC") structure containing capacitors buried therein. To avoid distortion, cracking or bowing during the co-firing process, high K dielectric material is placed between each electrode of each capacitor and low K dielectric is arranged symmetrically with respect to a plane passing through the approximate center of the high K dielectric material. Single as well as multiple stacked capacitors can be successfully buried, all without appreciable distortion, cracking or bowing.