Thomas D George

US Patent:

57570248, May 26, 1998

Filed:

Jul 10, 1996

Appl. No.:

8/695322

Inventors:

Robert W. Fathauer - Phoenix AZ
Thomas George - La Crescenta CA
Eric W. Jones - Los Angeles CA

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 2906

US Classification:

257 19

Abstract:

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition. Also monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

US Patent:

56859465, Nov 11, 1997

Filed:

Feb 15, 1995

Appl. No.:

8/390456

Inventors:

Robert W. Fathauer - Phoenix AZ
Thomas George - La Crescenta CA
Eric W. Jones - Los Angeles CA

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 21302

US Classification:

1566301

Abstract:

Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.