Thomas C Keena

US Patent:

7579632, Aug 25, 2009

Filed:

Sep 21, 2007

Appl. No.:

11/859624

Inventors:

Ali Salih - Mesa AZ, US
Mingjiao Liu - Gilbert AZ, US
Sudhama C. Shastri - Phoenix AZ, US
Thomas Keena - Chandler AZ, US
Gordon M. Grivna - Mesa AZ, US
Francine Y. Robb - Fountain Hills AZ, US
Ki Chang - Kansas City MO, US

Assignee:

Semiconductor Components Industries, L.L.C. - Phoenix AZ

International Classification:

H01L 23/62

US Classification:

257173, 257355, 257E29014, 257E29335, 438983

Abstract:

In one embodiment, an ESD device is configured to include a zener diode and a P-N diode.

US Patent:

7812367, Oct 12, 2010

Filed:

Oct 15, 2008

Appl. No.:

12/251978

Inventors:

Ali Salih - Mesa AZ, US
Mingjiao Liu - Gilbert AZ, US
Thomas Keena - Chandler AZ, US

Assignee:

Semiconductor Components Industries, LLC - Phoenix AZ

International Classification:

H01L 29/40
H01L 29/74
H01L 31/111
H01L 29/30
H01L 29/866
H01L 29/88
H01L 29/32
H01L 29/36
H01L 29/72
H01L 29/73
H01L 23/58

US Classification:

257111, 257106, 257107, 257109, 257173, 257174, 257594, 257E21355, 257E21356, 257E2902, 257E29335

Abstract:

In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes.

US Patent:

8039359, Oct 18, 2011

Filed:

Feb 27, 2009

Appl. No.:

12/395076

Inventors:

Thomas Keena - Chandler AZ, US
Ki Chang - Kansas City MO, US
Francine Y. Robb - Fountain Hills AZ, US
Mingjiao Liu - Gilbert AZ, US
Ali Salih - Mesa AZ, US
George Chang - Tempe AZ, US

Assignee:

Semiconductor Components Industries, LLC - Phoenix AZ

International Classification:

H01L 21/76
H01L 23/62

US Classification:

438430, 438 22, 438 47, 438296, 438297, 438424, 257 51, 257106, 257199, 257461, 257509, 257603, 257929, 257E21644

Abstract:

In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.

US Patent:

8110448, Feb 7, 2012

Filed:

Aug 17, 2010

Appl. No.:

12/858282

Inventors:

Ali Salih - Mesa AZ, US
Mingjiao Liu - Gilbert AZ, US
Thomas Keena - Chandler AZ, US

Assignee:

Semiconductor Components Industries, LLC - Phoenix AZ

International Classification:

H01L 21/332

US Classification:

438140, 438424, 438427, 438430, 438674, 438675, 438983, 257173, 257E21355

Abstract:

In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes.

US Patent:

20090079022, Mar 26, 2009

Filed:

Sep 21, 2007

Appl. No.:

11/859570

Inventors:

Thomas Keena - Chandler AZ, US
Ki Chang - Kansas City MO, US
Francine Y. Robb - Fountain Hills AZ, US
Mingjiao Liu - Gilbert AZ, US
Ali Salih - Mesa AZ, US
George Chang - Tempe AZ, US

International Classification:

H01L 29/866
H01L 21/329

US Classification:

257494, 438380, 257E21356, 257E29335

Abstract:

In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.

US Patent:

20100194465, Aug 5, 2010

Filed:

Feb 2, 2009

Appl. No.:

12/364242

Inventors:

Ali Salih - Mesa AZ, US
Thomas Keena - Chandler AZ, US
Jefferson W. Hall - Chandler AZ, US

International Classification:

H01L 37/00
H01L 21/00

US Classification:

327513, 29 2501

Abstract:

In one embodiment, a temperature compensated current source includes a depletion mode transistor coupled in series with an active semiconductor device that adjust the depletion mode transistor to minimize variations in the current due to temperature changes.

US Patent:

20180138319, May 17, 2018

Filed:

Nov 11, 2016

Appl. No.:

15/349162

Inventors:

- Phoenix AZ, US
Gordon M. GRIVNA - Mesa AZ, US
Daniel R. HEUTTL - Gilbert AZ, US
Osamu ISHIMARU - Chiyagawa, JP
Thomas KEENA - Gilbert AZ, US
Masafumi UEHARA - Yorikido, JP

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

International Classification:

H01L 29/861
H01L 29/06
H01L 29/41
H01L 29/45
H01L 29/40
H01L 29/66
H01L 27/08

Abstract:

A semiconductor device structure includes a region of semiconductor material with a first major surface and an opposing second major surface. A contact structure is disposed in a first portion of the region of semiconductor material and includes a tub structure extending from adjacent a first portion of the first major surface. A plurality of structures comprising portions of the region of semiconductor material extend outward from a lower surface of the tub structure. In some embodiments, the plurality of structures comprises a plurality of free-standing structures. A conductive material is disposed within the tub structure and laterally surrounding the plurality of structures. In one embodiment, the contact structure facilitates the fabrication of a monolithic series switching diode structure having a low-resistance substrate contact.

US Patent:

20160126236, May 5, 2016

Filed:

Nov 3, 2014

Appl. No.:

14/531380

Inventors:

- Phoenix AZ, US
Thomas KEENA - Chandler AZ, US

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

International Classification:

H01L 27/02
H01L 29/06
H01L 21/8222
H01L 27/06

Abstract:

In one embodiment, a semiconductor device may include a first transistor having a first current carrying electrode, a second current carrying electrode, and a control electrode; a first bipolar transistor having a collector coupled to the first current carrying electrode of the first transistor, a base coupled to the second current carrying electrode of the first transistor, and an emitter of the first bipolar transistor coupled to a first node of the semiconductor device. In an embodiment, the first node is connected to a terminal of a semiconductor package. An embodiment may include a semiconductor component coupled between the base of the first bipolar transistor and the emitter of the second bipolar transistor.